Patent US6169306B1 successfully refreshed from Google Patents.
US6169306B1
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US
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Semiconductor devices comprised of one or more epitaxial layers
Assignee: Advanced Micro Devices Inc
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Filing: 1998-07-27
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Granted: 2001-01-02
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Expires: 2018-07-27
Abstract
Abstract The present invention is directed to a novel semiconductor device and a method for making same. As disclosed herein, a gate dielectric comprised of epitaxial metal oxide is positioned above a semiconducting substrate. A gate conductor comprised of an epitaxial conductive material is positioned above the gate dielectric. The method comprises forming a layer of an epitaxial metal oxide above a semiconducting substrate, forming a layer of epitaxial conductive material above the layer of epitaxial metal oxide, and forming a source/drain region.
Inventors
- 👤 Mark I. Gardner
- 👤 Mark C. Gilmer
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 02:34
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/60; H10D64/66; H10D64/68; H10D64/691; H10B; H10B41/00; H10B41/40; H10B41/42; H10B41/43; H10B41/48; H10D64/01; H10D64/013; H10D64/01302; H10D64/01332; H10D64/01336; H10D64/01342
Claims Analysis
Total Claims: 59
Claim 1
Independent Claim
62 words
A semiconductor device, comprising: a semiconducting substrate; a layer of epitaxial substantially single crystalline metal oxide having a thickness ranging from approximately 10-30 Å positioned above said substrate; a gate conductor positioned above said layer of epitaxial substantially single crystalline metal oxide; and at least one source/drain region in the semiconductor substrate adjacent the layer of epitaxial substantially single crystalline metal oxide.
Claim 2
Dependent Claim
62 words
A semiconductor device, comprising: a semiconducting substrate; a layer of epitaxial substantially single crystalline metal oxide having a thickness ranging from approximately 10-30 Å positioned above said substrate; a gate conductor positioned above said layer of epitaxial substantially single crystalline metal oxide; and at least one source/drain region in the semiconductor substrate adjacent the layer of epitaxial substantially single crystalline metal oxide.
Claim 3
Dependent Claim
26 words
The semiconductor device of claim 1 , wherein said layer of epitaxial substantially single crystalline metal oxide is comprised of epitaxial substantially single crystalline aluminum oxide.
Claim 4
Dependent Claim
15 words
The semiconductor device of claim 1 , wherein said gate conductor is comprised of polysilicon.
Claim 5
Dependent Claim
19 words
The semiconductor device of claim 1 , wherein said gate conductor is comprised of epitaxial substantially single crystalline silicon.
Claim 6
Dependent Claim
64 words
A semiconductor device, comprising: a semiconducting substrate; a layer of epitaxial metal oxide positioned adjacent said substrate; a gate conductor positioned directly on said layer of epitaxial metal oxide without an intervening layer therebetween; and at least one source/drain region in the semiconductor substrate adjacent the layer of epitaxial metal oxide, wherein said layer of epitaxial metal oxide is comprised of epitaxial yttrium sesquioxide.
Claim 7
Dependent Claim
64 words
A semiconductor device, comprising: a semiconducting substrate; a layer of epitaxial metal oxide positioned adjacent said substrate; a gate conductor positioned directly on said layer of epitaxial metal oxide without an intervening layer therebetween; and at least one source/drain region in the semiconductor substrate adjacent the layer of epitaxial metal oxide, wherein said layer of epitaxial metal oxide is comprised of epitaxial yttrium sesquioxide.
Claim 8
Dependent Claim
73 words
A semiconductor device, comprising: a semiconducting substrate; a layer of epitaxial metal oxide positioned adjacent said substrate; a gate conductor positioned above said layer of epitaxial metal oxide; and at least one source/drain region in the semiconductor substrate adjacent the layer of epitaxial metal oxide wherein the layer of epitaxial metal oxide is comprised of epitaxial aluminum oxide, wherein said layer of epitaxial aluminum oxide has a thickness ranging from approximately 10-30 Å.
Claim 9
Dependent Claim
73 words
A semiconductor device, comprising: a semiconducting substrate; a layer of epitaxial metal oxide positioned adjacent said substrate; a gate conductor positioned above said layer of epitaxial metal oxide; and at least one source/drain region in the semiconductor substrate adjacent the layer of epitaxial metal oxide wherein the layer of epitaxial metal oxide is comprised of epitaxial aluminum oxide, wherein said layer of epitaxial aluminum oxide has a thickness ranging from approximately 10-30 Å.
Claim 10
Dependent Claim
67 words
A semiconductor device, comprising: a semiconducting substrate; a layer of epitaxial metal oxide positioned adjacent said substrate; a gate conductor positioned above said layer of epitaxial metal oxide; and at least one source/drain region in the semiconductor substrate adjacent the layer of epitaxial metal oxide, further comprising: a tunnel dielectric layer positioned above said gate conductor; and a floating gate layer positioned above said tunnel dielectric layer.
Claim 11
Dependent Claim
67 words
A semiconductor device, comprising: a semiconducting substrate; a layer of epitaxial metal oxide positioned adjacent said substrate; a gate conductor positioned above said layer of epitaxial metal oxide; and at least one source/drain region in the semiconductor substrate adjacent the layer of epitaxial metal oxide, further comprising: a tunnel dielectric layer positioned above said gate conductor; and a floating gate layer positioned above said tunnel dielectric layer.
Claim 12
Dependent Claim
53 words
A semiconductor device, comprising: a semiconducting substrate; a gate dielectric comprised of an epitaxial substantially single crystalline metal oxide having a thickness ranging from approximately 10-30 Å positioned above said substrate; a gate conductor positioned above said gate dielectric; and at least one source/drain region in the semiconductor substrate adjacent the gate dielectric.
Claim 13
Dependent Claim
53 words
A semiconductor device, comprising: a semiconducting substrate; a gate dielectric comprised of an epitaxial substantially single crystalline metal oxide having a thickness ranging from approximately 10-30 Å positioned above said substrate; a gate conductor positioned above said gate dielectric; and at least one source/drain region in the semiconductor substrate adjacent the gate dielectric.
Claim 14
Dependent Claim
20 words
The semiconductor device of claim 8 , wherein said gate dielectric is comprised of epitaxial substantially single crystalline aluminum oxide.
Claim 15
Dependent Claim
15 words
The semiconductor device of claim 8 , wherein said gate conductor is comprised of polysilicon.
Claim 16
Dependent Claim
19 words
The semiconductor device of claim 8 , wherein said gate conductor is comprised of epitaxial substantially single crystalline silicon.
Claim 17
Dependent Claim
58 words
A semiconductor device, comprising: a semiconducting substrate; a gate dielectric comprised of an epitaxial metal oxide positioned adjacent said substrate; a gate conductor positioned directly on said gate dielectric without an intervening layer therebetween; and at least one source/drain region in the semiconductor substrate adjacent the gate dielectric, wherein said gate dielectric is comprised of epitaxial yttrium sesquioxide.
Claim 18
Dependent Claim
58 words
A semiconductor device, comprising: a semiconducting substrate; a gate dielectric comprised of an epitaxial metal oxide positioned adjacent said substrate; a gate conductor positioned directly on said gate dielectric without an intervening layer therebetween; and at least one source/drain region in the semiconductor substrate adjacent the gate dielectric, wherein said gate dielectric is comprised of epitaxial yttrium sesquioxide.
Claim 19
Dependent Claim
65 words
A semiconductor device, comprising: a semiconducting substrate; a gate dielectric comprised of an epitaxial metal oxide positioned adjacent said substrate; a gate conductor positioned above said gate dielectric; and at least one source/drain region in the semiconductor substrate adjacent the gate dielectric wherein the gate dielectric is comprised of epitaxial aluminum oxide, wherein said epitaxial aluminum oxide has a thickness ranging from approximately 10-30 Å.
Claim 20
Dependent Claim
65 words
A semiconductor device, comprising: a semiconducting substrate; a gate dielectric comprised of an epitaxial metal oxide positioned adjacent said substrate; a gate conductor positioned above said gate dielectric; and at least one source/drain region in the semiconductor substrate adjacent the gate dielectric wherein the gate dielectric is comprised of epitaxial aluminum oxide, wherein said epitaxial aluminum oxide has a thickness ranging from approximately 10-30 Å.
Claim 21
Dependent Claim
64 words
A semiconductor device, comprising: a semiconducting substrate; a gate dielectric comprised of an epitaxial metal oxide positioned adjacent said substrate; a gate conductor positioned above said gate dielectric; and at least one source/drain ration in the semiconductor substrate adjacent the gate dielectric, further comprising: a tunnel dielectric layer positioned above said gate conductor; and a floating gate layer positioned above said tunnel dielectric layer.
Claim 22
Dependent Claim
64 words
A semiconductor device, comprising: a semiconducting substrate; a gate dielectric comprised of an epitaxial metal oxide positioned adjacent said substrate; a gate conductor positioned above said gate dielectric; and at least one source/drain ration in the semiconductor substrate adjacent the gate dielectric, further comprising: a tunnel dielectric layer positioned above said gate conductor; and a floating gate layer positioned above said tunnel dielectric layer.
Claim 23
Dependent Claim
72 words
A semiconductor device, comprising: a semiconducting substrate; a first layer of epitaxial substantially single crystalline metal oxide having a thickness ranging from approximately 10-30 Å positioned above said substrate; a first layer of an epitaxial substantially single crystalline conductor positioned above said first layer of epitaxial substantially sinfully crystalline metal oxide; and at least one source/drain region in the semiconductor substrate adjacent the first layer of epitaxial substantially single crystalline metal oxide.
Claim 24
Dependent Claim
72 words
A semiconductor device, comprising: a semiconducting substrate; a first layer of epitaxial substantially single crystalline metal oxide having a thickness ranging from approximately 10-30 Å positioned above said substrate; a first layer of an epitaxial substantially single crystalline conductor positioned above said first layer of epitaxial substantially sinfully crystalline metal oxide; and at least one source/drain region in the semiconductor substrate adjacent the first layer of epitaxial substantially single crystalline metal oxide.
Claim 25
Dependent Claim
37 words
The semiconductor device of claim 15 , further comprising a plurality of sidewall spacers positioned adjacent said first layer of epitaxial substantially single crystalline metal oxide and said first layer of an epitaxial substantially single crystalline conductor.
Claim 26
Dependent Claim
27 words
The semiconductor device of claim 15 , wherein said first layer of epitaxial substantially single crystalline metal oxide is comprised of epitaxial substantially single crystalline aluminum oxide.
Claim 27
Dependent Claim
26 words
The semiconductor device of claim 15 , wherein said first layer of an epitaxial substantially single crystalline conductor is comprised of epitaxial substantially single crystalline silicon.
Claim 28
Dependent Claim
26 words
The semiconductor device of claim 15 , wherein said first layer of an epitaxial substantially single crystalline conductor is comprised of epitaxial substantially single crystalline germanium.
Claim 29
Dependent Claim
26 words
The semiconductor device of claim 15 , wherein said first layer of an epitaxial substantially single crystalline conductor has a thickness ranging from approximately 500-2000 Å.
Claim 30
Dependent Claim
37 words
The semiconductor device of claim 15 , wherein said first layer of epitaxial substantially single crystalline metal oxide and said first layer of an epitaxial substantially single crystalline conductor are configured to form a field effect transistor.
Claim 31
Dependent Claim
87 words
A semiconductor device, comprising: a semiconducting substrate; a first layer of epitaxial metal oxide positioned above said substrate; a first layer of an epitaxial conductor positioned above said first layer of epitaxial metal oxide; and at least one source/drain region in the semiconductor substrate adjacent the first layer of epitaxial metal oxide, further comprising: a second layer of epitaxial metal oxide positioned above said first layer of an epitaxial conductor; and a second layer of an epitaxial conductor positioned above said second layer of epitaxial metal oxide.
Claim 32
Dependent Claim
87 words
A semiconductor device, comprising: a semiconducting substrate; a first layer of epitaxial metal oxide positioned above said substrate; a first layer of an epitaxial conductor positioned above said first layer of epitaxial metal oxide; and at least one source/drain region in the semiconductor substrate adjacent the first layer of epitaxial metal oxide, further comprising: a second layer of epitaxial metal oxide positioned above said first layer of an epitaxial conductor; and a second layer of an epitaxial conductor positioned above said second layer of epitaxial metal oxide.
Claim 33
Dependent Claim
35 words
The semiconductor device of claim 22 , further comprising a plurality of sidewall spacers positioned adjacent said first and second layers of epitaxial metal oxide and said first and second layers of an epitaxial conductor.
Claim 34
Dependent Claim
19 words
The semiconductor device of claim 22 , wherein said second layer of metal oxide is comprised of aluminum oxide.
Claim 35
Dependent Claim
19 words
The semiconductor device of claim 22 , wherein said second layer of metal oxide is comprised of yttrium sesquioxide.
Claim 36
Dependent Claim
20 words
The semiconductor device of claim 25 , wherein said second layer of an epitaxial conductor is comprised of epitaxial silicon.
Claim 37
Dependent Claim
20 words
The semiconductor device of claim 22 , wherein said second layer of an epitaxial conductor is comprised of epitaxial germanium.
Claim 38
Dependent Claim
23 words
The semiconductor device of claim 22 , wherein said second layer of epitaxial metal oxide has a thickness ranging from approximately 30-90 Å.
Claim 39
Dependent Claim
23 words
The semiconductor device of claim 22 , wherein said second layer of an epitaxial conductor has a thickness ranging from approximately 500-2000 Å.
Claim 40
Dependent Claim
34 words
The semiconductor device of claim 22 , wherein said first and second layers of epitaxial metal oxide and said first and second layers of an epitaxial conductor are configured to form a memory device.
Claim 41
Dependent Claim
71 words
A semiconductor device, comprising: a semiconducting substrate; a first layer of epitaxial metal oxide positioned above said substrate; a first layer of an epitaxial conductor positioned directly on said first layer of epitaxial metal oxide without an intervening layer therebetween; and at least one source/drain region in the semiconductor substrate adjacent the first layer of epitaxial metal oxide, wherein said first layer of epitaxial metal oxide is comprised of yttrium sesquioxide.
Claim 42
Dependent Claim
71 words
A semiconductor device, comprising: a semiconducting substrate; a first layer of epitaxial metal oxide positioned above said substrate; a first layer of an epitaxial conductor positioned directly on said first layer of epitaxial metal oxide without an intervening layer therebetween; and at least one source/drain region in the semiconductor substrate adjacent the first layer of epitaxial metal oxide, wherein said first layer of epitaxial metal oxide is comprised of yttrium sesquioxide.
Claim 43
Dependent Claim
68 words
A semiconductor device, comprising: a semiconducting substrate; a first layer of epitaxial metal oxide positioned above said substrate; a first layer of an epitaxial conductor positioned above said first layer of epitaxial metal oxide; and at least one source/drain region in the semiconductor substrate adjacent the first layer of epitaxial metal oxide, wherein said first layer of epitaxial metal oxide has a thickness ranging from approximately 10-30 Å.
Claim 44
Dependent Claim
68 words
A semiconductor device, comprising: a semiconducting substrate; a first layer of epitaxial metal oxide positioned above said substrate; a first layer of an epitaxial conductor positioned above said first layer of epitaxial metal oxide; and at least one source/drain region in the semiconductor substrate adjacent the first layer of epitaxial metal oxide, wherein said first layer of epitaxial metal oxide has a thickness ranging from approximately 10-30 Å.
Claim 45
Dependent Claim
58 words
A transistor, comprising: a semiconducting substrate; a gate dielectric comprised of epitaxial substantially single crystalline aluminum oxide having a thickness ranging from approximately 10-30 Å positioned above said substrate; a gate conductor comprised of epitaxial substantially single crystalline silicon positioned above said gate dielectric; and at least one source/drain region in the semiconductor substrate adjacent the gate dielectric.
Claim 46
Dependent Claim
58 words
A transistor, comprising: a semiconducting substrate; a gate dielectric comprised of epitaxial substantially single crystalline aluminum oxide having a thickness ranging from approximately 10-30 Å positioned above said substrate; a gate conductor comprised of epitaxial substantially single crystalline silicon positioned above said gate dielectric; and at least one source/drain region in the semiconductor substrate adjacent the gate dielectric.
Claim 47
Dependent Claim
22 words
The transistor of claim 33 , further comprising a plurality of sidewall spacers formed adjacent said gate dielectric and said gate conductor.
Claim 48
Dependent Claim
18 words
The transistor of claim 33 , wherein said gate conductor has a thickness ranging from approximately 500-2000 Å.
Claim 49
Dependent Claim
18 words
The transistor of claim 33 , wherein said gate conductor is doped with an N + dopant material.
Claim 50
Dependent Claim
18 words
The transistor of claim 33 , wherein said gate conductor is doped with a P + dopant material.
Claim 51
Dependent Claim
56 words
A transistor, comprising: a semiconducting substrate; a gate dielectric comprised of epitaxial aluminum oxide positioned above said substrate, a gate conductor comprised of epitaxial silicon positioned above said gate dielectric; and at least one source/drain region in the semiconductor substrate adjacent the gate dielectric, wherein said gate dielectric has a thickness ranging from approximately 10-30 Å.
Claim 52
Dependent Claim
56 words
A transistor, comprising: a semiconducting substrate; a gate dielectric comprised of epitaxial aluminum oxide positioned above said substrate, a gate conductor comprised of epitaxial silicon positioned above said gate dielectric; and at least one source/drain region in the semiconductor substrate adjacent the gate dielectric, wherein said gate dielectric has a thickness ranging from approximately 10-30 Å.
Claim 53
Dependent Claim
70 words
A memory device, comprising: a semiconducting substrate; a gate dielectric comprised of epitaxial aluminum oxide positioned above said substrate; a gate conductor comprised of epitaxial silicon positioned above said gate dielectric; a tunnel dielectric comprised of epitaxial aluminum oxide positioned above said gate conductor; a floating gate comprised of epitaxial silicon positioned above said tunnel dielectric; and at least one source/drain region in the semiconductor substrate adjacent the gate dielectric.
Claim 54
Dependent Claim
70 words
A memory device, comprising: a semiconducting substrate; a gate dielectric comprised of epitaxial aluminum oxide positioned above said substrate; a gate conductor comprised of epitaxial silicon positioned above said gate dielectric; a tunnel dielectric comprised of epitaxial aluminum oxide positioned above said gate conductor; a floating gate comprised of epitaxial silicon positioned above said tunnel dielectric; and at least one source/drain region in the semiconductor substrate adjacent the gate dielectric.
Claim 55
Dependent Claim
26 words
The memory device of claim 39 , further comprising a plurality of sidewall spacers formed adjacent said gate dielectric, gate conductor, tunnel dielectric and floating gate.
Claim 56
Dependent Claim
19 words
The memory device of claim 39 , wherein said gate dielectric has a thickness ranging form approximately 10-30 Å.
Claim 57
Dependent Claim
19 words
The memory device of claim 39 , wherein said gate conductor has a thickness ranging from approximately 500-2000 Å.
Claim 58
Dependent Claim
19 words
The memory device of claim 39 , wherein said tunnel dielectric has a thickness ranging from approximately 30-100 Å.
Claim 59
Dependent Claim
19 words
The memory device of claim 39 , wherein said floating gate has a thickness ranging from approximately 500-2000 Å.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2004-01-02 | 2004-07-03 | 2005-01-02 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2008-01-02 | 2008-07-03 | 2009-01-02 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2012-01-02 | 2012-07-03 | 2013-01-02 | $7700.00 | Window Closed / Lapsed |