US6158446A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Ultra-low particle semiconductor cleaner
Assignee: Tel Manufacturing and Engineering of America Inc
•
Filing: 1998-09-04
•
Granted: 2000-12-12
•
Expires: 2018-09-04
Abstract
Abstract A method for cleaning a semiconductor wafer. The method includes immersing a wafer in a liquid comprising water. The wafer has a front face, a back face, and an edge. The method also includes providing a substantially particle free environment adjacent to the front face and the back face as the liquid is being removed. A step of introducing a carrier gas comprising a cleaning enhancement substance during the providing step also is included. The cleaning enhancement substance dopes the liquid which is attached to the front face and the back face to cause a concentration gradient of the cleaning enhancement substance in the attached liquid to accelerate fluid flow of the attached liquid off of the wafer.
Inventors
- 👤 Raj Mohindra
- 👤 Abhay Bhushan
- 👤 Rajiv Bhushan
- 👤 Suraj Puri
- 👤 John H. Anderson, Sr.
- 👤 Jeffrey Nowell
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 02:23
CPC Classifications
H; H10; H10P; H10P70/00; H10P70/10; H10P70/15; B; B08; B08B; B08B3/00; B08B3/04; B08B3/10; H10P72/00; H10P72/04; H10P72/0402; H10P72/0406; H10P72/0411; H10P72/0414; H10P72/0416; H10P72/0418; H10P72/0422; H10P72/0424; H10P72/0426; G; G11; G11B; G11B23/00; G11B23/50; G11B23/505; Y; Y10; Y10S; Y10S134/00; Y10S134/902
Claims Analysis
Total Claims: 30
Claim 1
Independent Claim
126 words
A method for processing a semiconductor wafer comprising: immersing a wafer into an etchant to remove at least a portion of a film on said wafer, said wafer including a front face, a back face and an edge; removing said wafer from said etchant; immersing said wafer in a liquid comprising water; providing a substantially particle free environment adjacent to said front face and said back face as said liquid is being removed; and introducing a cleaning enhancement substance during said providing, said cleaning enhancement substance doping said liquid which is attached to said front face and said back face to cause a concentration gradient of said cleaning enhancement substance in said attached liquid to accelerate fluid flow of said attached liquid off of said wafer.
Claim 2
Independent Claim
126 words
A method for processing a semiconductor wafer comprising: immersing a wafer into an etchant to remove at least a portion of a film on said wafer, said wafer including a front face, a back face and an edge; removing said wafer from said etchant; immersing said wafer in a liquid comprising water; providing a substantially particle free environment adjacent to said front face and said back face as said liquid is being removed; and introducing a cleaning enhancement substance during said providing, said cleaning enhancement substance doping said liquid which is attached to said front face and said back face to cause a concentration gradient of said cleaning enhancement substance in said attached liquid to accelerate fluid flow of said attached liquid off of said wafer.
Claim 3
Dependent Claim
25 words
The method of claim 1 further comprising introducing a drying source adjacent to said wafer, said drying source removing said liquid attached to said edge.
Claim 4
Dependent Claim
25 words
The method of claim 1 wherein said providing leaves a thin boundary layer of said liquid attached to said front face and said back face.
Claim 5
Dependent Claim
20 words
The method of claim 1 wherein said etchant comprises a fluorine bearing compound, said etchant removing oxides from said wafer.
Claim 6
Dependent Claim
12 words
The method of claim 1 wherein said etchant comprises a hydrofluoric acid.
Claim 7
Dependent Claim
30 words
The method of claim 1 wherein said cleaning enhancement substance is selected from a group consisting of a surfactant, isopropyl alcohol, di-acetone alcohol, helium, carbon dioxide, ammonia, nitrogen, and 1-methoxy-2-propanol.
Claim 8
Dependent Claim
21 words
The method of claim 1 wherein said liquid during said introducing removes particles off said front face and said back face.
Claim 9
Dependent Claim
18 words
The method of claim 7 wherein said particles are each substantially less than about 0.2 microns in diameter.
Claim 10
Dependent Claim
22 words
The method of claim 1 wherein said liquid is substantially free from particles greater than about 0.2 microns in diameter and less.
Claim 11
Dependent Claim
32 words
The method of claim 1 wherein said cleaning enhancement substance is mixed with a carrier gas, said carrier gas being selected from a group consisting of air, nitrogen, inert gas, and argon.
Claim 12
Dependent Claim
32 words
The method of claim 1 wherein said cleaning enhancement substance is mixed with a carrier gas, said carrier gas comprising said cleaning enhancement substance being mixed with said substantially particle free environment.
Claim 13
Dependent Claim
16 words
The method of claim 1 wherein said wafer is at an angle from a vertical position.
Claim 14
Dependent Claim
14 words
The method of claim 12 wherein said angle is less than about 15 degrees.
Claim 15
Dependent Claim
19 words
The method of claim 1 wherein said wafer is substantially free from oxidation before said immersing into said etchant.
Claim 16
Dependent Claim
13 words
The method of claim 1 wherein said wafer is a recently etched wafer.
Claim 17
Dependent Claim
27 words
The method of claim 1 wherein said wafer is substantially stationary during said providing and introducing steps, said substantially stationary wafer is substantially free from mechanical movement.
Claim 18
Dependent Claim
27 words
The method of claim 1 wherein said cleaning enhancement substance is a trace amount of polar organic compound ranging in concentration from about 1,000 ppm and less.
Claim 19
Dependent Claim
27 words
The method of claim 1 wherein said cleaning enhancement substance is a trace amount of polar organic compound ranging in concentration from about 500 ppm and less.
Claim 20
Dependent Claim
25 words
The method of claim 1 wherein said liquid is removed at a rate of about 5.0 mm/sec. or less as measured from said front surface.
Claim 21
Dependent Claim
26 words
The method of claim 1 wherein said liquid is removed at a rate between about 0.25 mm/sec. and 5.0 mm./sec. as measured from said front surface.
Claim 22
Dependent Claim
26 words
The method of claim 1 wherein said liquid is removed at a rate between about 0.5 mm/sec. and 2.5 mm./sec. as measured from said front surface.
Claim 23
Dependent Claim
19 words
The method of claim 1 wherein said immersing said wafer in water occurs for about 5.0 seconds and less.
Claim 24
Dependent Claim
19 words
The method of claim 1 wherein said immersing said wafer in water occurs for about 2.5 seconds and less.
Claim 25
Dependent Claim
25 words
The method of claim 1 wherein said wafer is immediately immersed in to said water to substantially prevent a formation of oxide from gaseous oxygen.
Claim 26
Dependent Claim
23 words
The method of claim 1 wherein said immersing in said water promotes formation of a thin, high grade, oxide layer on said wafer.
Claim 27
Independent Claim
137 words
A method for processing a semiconductor wafer comprising: immersing a wafer into an etchant comprising a fluorine bearing compound, said etchant removing oxide from said wafer, said wafer including a front face, a back face and an edge; immersing said wafer in a liquid comprising water, said immersing in said liquid promotes formation of a thin, high grade, oxide layer on said wafer; providing a substantially particle free environment adjacent to said front face and said back face as said liquid is being removed; and introducing a cleaning enhancement substance during said providing, said cleaning enhancement substance doping said liquid which is attached to said front face and said back face to cause a concentration gradient of said cleaning enhancement substance in said attached liquid to accelerate fluid flow of said attached liquid off of said wafer.
Claim 28
Independent Claim
137 words
A method for processing a semiconductor wafer comprising: immersing a wafer into an etchant comprising a fluorine bearing compound, said etchant removing oxide from said wafer, said wafer including a front face, a back face and an edge; immersing said wafer in a liquid comprising water, said immersing in said liquid promotes formation of a thin, high grade, oxide layer on said wafer; providing a substantially particle free environment adjacent to said front face and said back face as said liquid is being removed; and introducing a cleaning enhancement substance during said providing, said cleaning enhancement substance doping said liquid which is attached to said front face and said back face to cause a concentration gradient of said cleaning enhancement substance in said attached liquid to accelerate fluid flow of said attached liquid off of said wafer.
Claim 29
Dependent Claim
25 words
The method of claim 26 wherein said wafer is immediately immersed in to said water to substantially prevent a formation of oxide from gaseous oxygen.
Claim 30
Dependent Claim
13 words
The method of claim 27 wherein said gaseous oxygen is derived from air.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2003-12-12 | 2004-06-12 | 2004-12-12 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2007-12-12 | 2008-06-12 | 2008-12-12 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2011-12-12 | 2012-06-12 | 2012-12-12 | $7700.00 | Window Closed / Lapsed |