Claims Analysis
Total Claims: 19
Claim 1
Independent Claim
188 words
A field effect transistor comprising: a semiconductor substrate having a pair of spaced apart void regions filled with a dielectric, said dielectric in said void regions and said substrate providing a first planar surface having a pair of spaced apart regions of said dielectric with the substrate disposed between said regions of said dielectric; a conductive drain region disposed solely on one of said pair spaced apart regions of said dielectric; a conductive source region disposed solely on the other of said pair of spaced apart regions of said dielectric; a region of semiconductor material disposed on said substrate between said regions of said dielectric and intimate with said source region and said drain region, wherein said source region, said drain region and said region of semiconductor material each has a second surface coplanar with the second surface of the other of said source region, said drain region and said region of semiconductor material and remote from and non-coplanar with said first planar surface; a gate insulator layer having a planar outer surface disposed over said second surface; and a conductive gate body disposed on said gate insulator.
Claim 2
Dependent Claim
188 words
A field effect transistor comprising: a semiconductor substrate having a pair of spaced apart void regions filled with a dielectric, said dielectric in said void regions and said substrate providing a first planar surface having a pair of spaced apart regions of said dielectric with the substrate disposed between said regions of said dielectric; a conductive drain region disposed solely on one of said pair spaced apart regions of said dielectric; a conductive source region disposed solely on the other of said pair of spaced apart regions of said dielectric; a region of semiconductor material disposed on said substrate between said regions of said dielectric and intimate with said source region and said drain region, wherein said source region, said drain region and said region of semiconductor material each has a second surface coplanar with the second surface of the other of said source region, said drain region and said region of semiconductor material and remote from and non-coplanar with said first planar surface; a gate insulator layer having a planar outer surface disposed over said second surface; and a conductive gate body disposed on said gate insulator.
Claim 3
Dependent Claim
14 words
The transistor of claim 1 wherein said dielectric comprise oxide deposited on the substrate.
Claim 4
Dependent Claim
24 words
The transistor of claim 2 wherein said source region and said drain region are polysilicon and said region of semiconductor material is monocrystalline silicon.
Claim 5
Dependent Claim
21 words
The transistor of claim 1 and further comprising epitaxial silicon disposed between the conductive source region and the conductive drain region.
Claim 6
Dependent Claim
24 words
The transistor of claim 4 wherein said source region and said drain region are polysilicon and said region of semiconductor material is monocrystalline silicon.
Claim 7
Dependent Claim
32 words
The transistor of claim 1 wherein said pair of spaced apart region of said dielectric are separated by a minimum distance approximately the same as the length of the conductive gate body.
Claim 8
Dependent Claim
24 words
The transistor of claim 6 wherein said source region and said drain region are polysilicon and said region of semiconductor material is monocrystalline silicon.
Claim 9
Dependent Claim
33 words
The transistor of claim 7 further including a sidewall insulator disposed between said gate insulator and said dielectric disposed in said voids disposed on sidewalls of said source region and said drain region.
Claim 10
Dependent Claim
33 words
The transistor of claim 6 further including a sidewall insulator disposed between said gate insulator and said dielectric disposed in said voids disposed on sidewalls of said source region and said drain region.
Claim 11
Dependent Claim
18 words
The transistor of claim 1 and further comprising a sidewall insulator body associated with the conductive gate body.
Claim 12
Dependent Claim
24 words
The transistor of claim 10 wherein said source region and said drain region are polysilicon and said region of semiconductor material is monocrystalline silicon.
Claim 13
Dependent Claim
12 words
The transistor of claim 1 wherein the conductive gate body comprises polysilicon.
Claim 14
Dependent Claim
24 words
The transistor of claim 12 wherein said source region and said drain region are polysilicon and said region of semiconductor material is monocrystalline silicon.
Claim 15
Dependent Claim
12 words
The transistor of claim 1 wherein the gate insulator layer comprises oxide.
Claim 16
Dependent Claim
24 words
The transistor of claim 14 wherein said source region and said drain region are polysilicon and said region of semiconductor material is monocrystalline silicon.
Claim 17
Dependent Claim
24 words
The transistor of claim 1 wherein said source region and said drain region are polysilicon and said region of semiconductor material is monocrystalline silicon.
Claim 18
Dependent Claim
33 words
The transistor of claim 16 further including a sidewall insulator disposed between said gate insulator and said dielectric disposed in said voids disposed on sidewalls of said source region and said drain region.
Claim 19
Dependent Claim
33 words
The transistor of claim 1 further including a sidewall insulator disposed between said gate insulator and said dielectric disposed in said voids disposed on sidewalls of said source region and said drain region.