US6146973A
Expired / Lapsed
US
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High density isolation using an implant as a polish stop
Assignee: GlobalFoundries Inc
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Filing: 1999-04-12
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Granted: 2000-11-14
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Expires: 2019-04-12
Abstract
Abstract A process for forming high density isolation for very large scale integration on semiconductor chips, comprising the steps of: orientation-dependent etching a portion of a semiconductor substrate to form protruding features on a surface of the semiconductor substrate; forming a layer of insulation above the etched portion of the semiconductor substrate; implanting atoms and/or ions of a non-conductive material to a first predetermined depth into the insulation layer and a second predetermined depth into the protruding features in the semiconductor substrate to provide a detectible change in material characteristic at that depth; and polishing the insulation layer and protruding features down to a depth determined by detecting the change in material characteristic to thereby remove a top portion of the protruding features to form a first surface on each of a plurality of the protruding features.
Inventors
- 👤 Yue Song He
- 👤 Yowjuang William Liu
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 10:30
CPC Classifications
H; H10; H10W; H10W10/00; H10W10/01; H10W10/011; H10W10/014; H10W10/0148; H10W10/10; H10W10/17
Claims Analysis
Total Claims: 32
Claim 1
Independent Claim
168 words
A process for forming high density isolation for very large scale integration on semiconductor chips, comprising the steps of: orientation-dependent etching a portion of a semiconductor substrate to form protruding features on a surface of said semiconductor substrate; forming a layer of insulation above said etched portion of said semiconductor substrate; implanting atoms and/or ions of a non-conductive material to a first predetermined depth into said insulation layer, with respect to a top-most location of said insulation layer, and a second predetermined depth into said protruding features, with respect to a topmost location of said protruding features, to provide a detectable change in material characteristic at said first and second predetermined depths; and polishing said insulation layer and protruding features down in an amount corresponding to at most said first and second predetermined depths, respectively, as determined by detecting said change in material characteristic, to thereby remove a top portion of said protruding features to form a first surface on each of a plurality of said protruding features.
Claim 2
Dependent Claim
168 words
A process for forming high density isolation for very large scale integration on semiconductor chips, comprising the steps of: orientation-dependent etching a portion of a semiconductor substrate to form protruding features on a surface of said semiconductor substrate; forming a layer of insulation above said etched portion of said semiconductor substrate; implanting atoms and/or ions of a non-conductive material to a first predetermined depth into said insulation layer, with respect to a top-most location of said insulation layer, and a second predetermined depth into said protruding features, with respect to a topmost location of said protruding features, to provide a detectable change in material characteristic at said first and second predetermined depths; and polishing said insulation layer and protruding features down in an amount corresponding to at most said first and second predetermined depths, respectively, as determined by detecting said change in material characteristic, to thereby remove a top portion of said protruding features to form a first surface on each of a plurality of said protruding features.
Claim 3
Dependent Claim
14 words
A process as defined in claim 1, wherein said detected material characteristic is hardness.
Claim 4
Dependent Claim
16 words
A process as defined in claim 1, wherein said detected material characteristic is material etch rate.
Claim 5
Dependent Claim
21 words
A process as defined in claim 1, wherein said implanting step comprises the step of implanting with Si atoms and/or ions.
Claim 6
Dependent Claim
21 words
A process as defined in claim 2, wherein said implanting step comprises the step of implanting with Si atoms and/or ions.
Claim 7
Dependent Claim
21 words
A process as defined in claim 3, wherein said implanting step comprises the step of implanting with Si atoms and/or ions.
Claim 8
Dependent Claim
21 words
A process as defined in claim 1, wherein said implanting step comprises the step of implanting with O atoms and/or ions.
Claim 9
Dependent Claim
21 words
A process as defined in claim 2, wherein said implanting step comprises the step of implanting with O atoms and/or ions.
Claim 10
Dependent Claim
21 words
A process as defined in claim 3, wherein said implanting step comprises the step of implanting with O atoms and/or ions.
Claim 11
Dependent Claim
21 words
A process as defined in claim 1, wherein said implanting step comprises the step of implanting with N atoms and/or ions.
Claim 12
Dependent Claim
21 words
A process as defined in claim 3, wherein said implanting step comprises the step of implanting with N atoms and/or ions.
Claim 13
Dependent Claim
17 words
A process as defined in claim 1, wherein said orientation-dependent etching step forms approximate pyramid-shaped protruding features.
Claim 14
Dependent Claim
39 words
A process as defined in claim 2, wherein said orientation-dependent etching step comprises orientation dependent etching a silicon substrate with a predetermined lattice orientation, and wherein said insulation forming step comprises the step of forming a layer of oxide.
Claim 15
Dependent Claim
16 words
A process as defined in claim 1, wherein said polishing step comprises a chemical-mechanical polishing step.
Claim 16
Dependent Claim
20 words
A process as defined in claim 1, further comprising the step of: etching said top surface of said protruding features.
Claim 17
Dependent Claim
161 words
A process for forming high density isolation for very large scale integration on a semiconductor chip, comprising the steps of: orientation-dependent etching a portion of a silicon substrate with a [111] orientation to form a plurality of pyramid-shaped features on a surface of said silicon substrate; forming an oxide layer over said portion of pyramid-shaped features; implanting Si atoms and/or ions of a non-conductive material to a first predetermined depth into said oxide layer, with respect to a top-most location of said oxide layer, and a second predetermined depth into said pyramid-shaped features, with respect to a top-most point of said pyramid-shaped features, to provide a detectable change in material characteristic at said first and second predetermined depths; and chemical-mechanical polishing said oxide layer and pyramid-shaped features down in an amount corresponding to at most said first and second predetermined depths, respectively, as determined by detecting said change in material characteristic, to thereby remove a top portion of said pyramid-shaped features.
Claim 18
Dependent Claim
161 words
A process for forming high density isolation for very large scale integration on a semiconductor chip, comprising the steps of: orientation-dependent etching a portion of a silicon substrate with a [111] orientation to form a plurality of pyramid-shaped features on a surface of said silicon substrate; forming an oxide layer over said portion of pyramid-shaped features; implanting Si atoms and/or ions of a non-conductive material to a first predetermined depth into said oxide layer, with respect to a top-most location of said oxide layer, and a second predetermined depth into said pyramid-shaped features, with respect to a top-most point of said pyramid-shaped features, to provide a detectable change in material characteristic at said first and second predetermined depths; and chemical-mechanical polishing said oxide layer and pyramid-shaped features down in an amount corresponding to at most said first and second predetermined depths, respectively, as determined by detecting said change in material characteristic, to thereby remove a top portion of said pyramid-shaped features.
Claim 19
Dependent Claim
28 words
A process as defined in claim 16, wherein said chemical-mechanical polishing step comprises the step of polishing to a depth determined by detecting a change in material hardness.
Claim 20
Dependent Claim
29 words
A process as defined in claim 16, wherein said chemical-mechanical polishing step comprises the step of polishing to a depth determined by detecting a change in material etch rate.
Claim 21
Dependent Claim
161 words
A process for forming high density isolation for very large scale integration on a semiconductor chip, comprising the steps of: orientation-dependent etching a portion of a silicon substrate with a [111] orientation to form a plurality of pyramid-shaped features on a surface of said silicon substrate; forming an oxide layer over said portion of pyramid-shaped features; implanting O atoms and/or ions of a non-conductive material to a first predetermined depth into said oxide layer, with respect to a top-most location of said oxide layer, and a second predetermined depth into said pyramid-shaped features, with respect to a top-most point of said pyramid-shaped features, to provide a detectable change in material characteristic at said first and second predetermined depths; and chemical-mechanical polishing said oxide layer and pyramid-shaped features down in an amount corresponding to at most said first and second predetermined depths, respectively, as determined by detecting said change in material characteristic, to thereby remove a top portion of said pyramid-shaped features.
Claim 22
Dependent Claim
161 words
A process for forming high density isolation for very large scale integration on a semiconductor chip, comprising the steps of: orientation-dependent etching a portion of a silicon substrate with a [111] orientation to form a plurality of pyramid-shaped features on a surface of said silicon substrate; forming an oxide layer over said portion of pyramid-shaped features; implanting O atoms and/or ions of a non-conductive material to a first predetermined depth into said oxide layer, with respect to a top-most location of said oxide layer, and a second predetermined depth into said pyramid-shaped features, with respect to a top-most point of said pyramid-shaped features, to provide a detectable change in material characteristic at said first and second predetermined depths; and chemical-mechanical polishing said oxide layer and pyramid-shaped features down in an amount corresponding to at most said first and second predetermined depths, respectively, as determined by detecting said change in material characteristic, to thereby remove a top portion of said pyramid-shaped features.
Claim 23
Dependent Claim
28 words
A process as defined in claim 19, wherein said chemical-mechanical polishing step comprises the step of polishing to a depth determined by detecting a change in material hardness.
Claim 24
Dependent Claim
29 words
A process as defined in claim 19, wherein said chemical-mechanical polishing step comprises the step of polishing to a depth determined by detecting a change in material etch rate.
Claim 25
Dependent Claim
161 words
A process for forming high density isolation for very large scale integration on a semiconductor chip, comprising the steps of: orientation-dependent etching a portion of a silicon substrate with a [111] orientation to form a plurality of pyramid-shaped features on a surface of said silicon substrate; forming an oxide layer over said portion of pyramid-shaped features; implanting N atoms and/or ions of a non-conductive material to a first predetermined depth into said oxide layer with respect to a top-most location of said oxide layer, and a second predetermined depth into said pyramid-shaped features, with respect to a top-most point of said pyramid-shaped features, to provide a detectable change in material characteristic at said first and second predetermined depths; and chemical-mechanical polishing said oxide layer and pyramid-shaped features down in an amount corresponding to at most said first and second predetermined depths, respectively, as determined by detecting said change in material characteristic, to thereby remove a top portion of said pyramid-shaped features.
Claim 26
Dependent Claim
161 words
A process for forming high density isolation for very large scale integration on a semiconductor chip, comprising the steps of: orientation-dependent etching a portion of a silicon substrate with a [111] orientation to form a plurality of pyramid-shaped features on a surface of said silicon substrate; forming an oxide layer over said portion of pyramid-shaped features; implanting N atoms and/or ions of a non-conductive material to a first predetermined depth into said oxide layer with respect to a top-most location of said oxide layer, and a second predetermined depth into said pyramid-shaped features, with respect to a top-most point of said pyramid-shaped features, to provide a detectable change in material characteristic at said first and second predetermined depths; and chemical-mechanical polishing said oxide layer and pyramid-shaped features down in an amount corresponding to at most said first and second predetermined depths, respectively, as determined by detecting said change in material characteristic, to thereby remove a top portion of said pyramid-shaped features.
Claim 27
Dependent Claim
29 words
A process as defined in claim 22, wherein said chemical-mechanical polishing step comprises the step of polishing to a depth determined by detecting a change in material etch rate.
Claim 28
Dependent Claim
158 words
A process for forming high density isolation for very large scale integration semiconductor chips, comprising the steps of: forming protruding features on a surface of said semiconductor substrate; forming a layer of insulation above said etched portion of said semiconductor substrate; implanting atoms and/or ions of a non-conductive material to a first predetermined depth into said insulation layer with respect to a top-most location of said insulation layer, and a second predetermined depth into said protruding features, with respect to a top-most location of said protruding features to provide a detectable change in material characteristic at said first and second predetermined depths; and polishing said insulation layer and protruding features down in an amount corresponding to at most said first and second predetermined depths, respectively, as determined by detecting said change in material characteristic, to thereby remove a top portion of said protruding features to form a first surface on each of a plurality of said protruding features.
Claim 29
Dependent Claim
158 words
A process for forming high density isolation for very large scale integration semiconductor chips, comprising the steps of: forming protruding features on a surface of said semiconductor substrate; forming a layer of insulation above said etched portion of said semiconductor substrate; implanting atoms and/or ions of a non-conductive material to a first predetermined depth into said insulation layer with respect to a top-most location of said insulation layer, and a second predetermined depth into said protruding features, with respect to a top-most location of said protruding features to provide a detectable change in material characteristic at said first and second predetermined depths; and polishing said insulation layer and protruding features down in an amount corresponding to at most said first and second predetermined depths, respectively, as determined by detecting said change in material characteristic, to thereby remove a top portion of said protruding features to form a first surface on each of a plurality of said protruding features.
Claim 30
Dependent Claim
24 words
A process as defined in claim 24, wherein said implanting step comprises the step of implanting from the group of Si, O, and N.
Claim 31
Dependent Claim
14 words
A process as defined in claim 24 wherein said detected material characteristic is hardness.
Claim 32
Dependent Claim
15 words
A process as defined in claim 24, wherein said detected material characteristic is etch rate.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2003-11-14 | 2004-05-15 | 2004-11-14 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2007-11-14 | 2008-05-15 | 2008-11-14 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2011-11-14 | 2012-05-15 | 2012-11-14 | $7700.00 | Window Closed / Lapsed |