US5902127A
Expired / Lapsed
US
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Methods for forming isolation trenches including doped silicon oxide
Assignee: Samsung Electronics Co Ltd
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Filing: 1996-10-31
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Granted: 1999-05-11
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Expires: 2016-10-31
Abstract
Abstract A method for forming a microelectronic structure includes the steps of forming a trench in a substrate and forming an insulating layer which fills the trench and covers the substrate. Ions can be implanted into the insulating layer which decrease an etch rate of the insulating layer, and portions of the insulating layer on the substrate can be removed while maintaining the insulating layer in the trench. In addition, the step of forming the insulating layer can include forming an undoped oxide layer on the substrate and forming a doped oxide layer on the undoped oxide layer wherein a void is formed in the doped oxide layer. The void can thus be reduced by reflowing the doped oxide layer.
Inventors
- 👤 Tai-su Park
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 06:33
CPC Classifications
H; H10; H10W; H10W10/00; H10W10/01; H10W10/011; H10W10/014; H10W10/0145; H10W10/10; H10W10/17; Y; Y10; Y10S; Y10S148/00; Y10S148/05
Claims Analysis
Total Claims: 25
Claim 1
Independent Claim
105 words
A method for forming a microelectronic structure, said method comprising the steps of: forming a trench in a substrate; forming an insulating layer in said trench and covering said substrate; in implanting ions into said insulating layer which decrease an etch rate of said insulating layer; and removing portions of said insulating layer on said substrate while maintaining said insulating layer in said trench; wherein said step of forming said insulating layer comprises forming an undoped oxide layer on said substrate, and forming a doped oxide layer on said undoped oxide layer wherein a void is formed in said doped oxide layer in said trench.
Claim 2
Independent Claim
105 words
A method for forming a microelectronic structure, said method comprising the steps of: forming a trench in a substrate; forming an insulating layer in said trench and covering said substrate; in implanting ions into said insulating layer which decrease an etch rate of said insulating layer; and removing portions of said insulating layer on said substrate while maintaining said insulating layer in said trench; wherein said step of forming said insulating layer comprises forming an undoped oxide layer on said substrate, and forming a doped oxide layer on said undoped oxide layer wherein a void is formed in said doped oxide layer in said trench.
Claim 3
Dependent Claim
17 words
A method according to claim 1 wherein said implanting step comprises implanting nitrogen (N + ) ions.
Claim 4
Dependent Claim
27 words
A method according to claim 2 wherein said nitrogen ions are implanted at a dose on the order of 1×10 13 to 1×10 18 ions/cm 2 .
Claim 5
Dependent Claim
30 words
A method according to claim 1 wherein said step of forming said doped oxide layer is followed by reflowing said doped oxide layer wherein said reflowing step reduces said void.
Claim 6
Dependent Claim
25 words
A method according to claim 4 wherein said reflowing step comprises heating said insulating layer to a temperature of about 950° C. to 1,150° C.
Claim 7
Dependent Claim
30 words
A method according to claim 1 wherein said doped oxide layer comprises a material chosen from the group consisting of boro-silicate glass (BSG), phospho-silicate glass (PSG), and borophosphorous-silicate glass (BPSG).
Claim 8
Dependent Claim
77 words
A method according to claim 1 wherein said step of forming said trench is preceded by the step of forming a mask layer on said substrate wherein said mask layer exposes a portion of said substrate, wherein said trench is formed in said exposed portion of said substrate, wherein said insulating layer covers said mask layer, and wherein said removing step comprises removing portions of said insulating layer on said mask layer and removing said mask layer.
Claim 9
Independent Claim
62 words
A method for forming a microelectronic structure, said method comprising the steps of: forming a trench in a substrate; forming an insulating layer which fills said trench and covers said substrate wherein a void is formed in said insulating layer in said trench; implanting ions into said insulating layer; and reflowing said implanted insulating layer wherein said reflowing step reduces said void.
Claim 10
Independent Claim
62 words
A method for forming a microelectronic structure, said method comprising the steps of: forming a trench in a substrate; forming an insulating layer which fills said trench and covers said substrate wherein a void is formed in said insulating layer in said trench; implanting ions into said insulating layer; and reflowing said implanted insulating layer wherein said reflowing step reduces said void.
Claim 11
Dependent Claim
36 words
A method according to claim 8 wherein said implanting step comprises implanting ions chosen from the group consisting of boron (B + ) ions, phosphorous (P + ) ions, and difluoroborate (BF 2 + ) ions.
Claim 12
Dependent Claim
27 words
A method according to claim 9 wherein said implanted ions are implanted at a dose on the order of 1×10 15 to 1×10 17 ions/cm 2 .
Claim 13
Dependent Claim
25 words
A method according to claim 8 wherein said reflowing step comprises heating said insulating layer to a temperature of about 950° C. to 1,500° C.
Claim 14
Dependent Claim
15 words
A method according to claim 8 wherein said insulating layer comprises an undoped oxide layer.
Claim 15
Dependent Claim
30 words
A method according to claim 8 further comprising the step of implanting nitrogen (N + ) ions into said insulating layer which decrease an etch rate of said insulating layer.
Claim 16
Dependent Claim
27 words
A method according to claim 13 wherein said nitrogen ions are implanted at a dose on the order of 1×10 13 to 1×10 18 ions/cm 2 .
Claim 17
Independent Claim
77 words
A method for forming a microelectronic structure, said method comprising the steps of: forming a trench in a substrate; forming an undoped insulating layer on said substrate; forming a doped insulating layer on said undoped insulating layer opposite said substrate such that said undoped and doped insulating layers fill said trench and cover said substrate; and implanting ions into said doped and undoped insulating layers which decrease an etch rate of said doped and undoped insulating layers.
Claim 18
Independent Claim
77 words
A method for forming a microelectronic structure, said method comprising the steps of: forming a trench in a substrate; forming an undoped insulating layer on said substrate; forming a doped insulating layer on said undoped insulating layer opposite said substrate such that said undoped and doped insulating layers fill said trench and cover said substrate; and implanting ions into said doped and undoped insulating layers which decrease an etch rate of said doped and undoped insulating layers.
Claim 19
Dependent Claim
17 words
A method according to claim 15 wherein said implanting step comprises implanting nitrogen (N + ) ions.
Claim 20
Dependent Claim
27 words
A method according to claim 16 wherein said nitrogen ions are implanted at a dose on the order of 1×10 13 to 1×10 18 ions/cm 2 .
Claim 21
Dependent Claim
46 words
A method according to claim 15 wherein said steps of forming said undoped and doped insulating layers comprise forming a layer of undoped oxide and implanting a surface portion of said undoped layer of oxide to form a doped oxide layer on an undoped oxide layer.
Claim 22
Dependent Claim
44 words
A method according to claim 15 wherein a void is formed in said doped insulating layer in said trench, and wherein said step of forming said doped insulating layer is followed by reflowing said doped insulating layer wherein said reflowing step reduces said void.
Claim 23
Dependent Claim
26 words
A method according to claim 19 wherein said reflowing step comprises heating said doped insulating layer to a temperature of about 950° C. to 1,150° C.
Claim 24
Dependent Claim
30 words
A method according to claim 15 wherein said doped insulating layer comprises a material chosen from the group consisting of boro-silicate glass (BSG), phospho-silicate glass (PSG), and borophosphorous-silicate glass (BPSG).
Claim 25
Dependent Claim
80 words
A method according to claim 15 wherein said step of forming said trench is preceded by the step of forming a mask layer on said substrate wherein said mask layer exposes a portion of said substrate, wherein said trench is formed in said exposed portion of said substrate, wherein said undoped and doped insulating layers cover said mask layer, and wherein said removing step comprises removing portions of said insulating layers on said mask layer and removing said mask layer.
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