US6144285A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Thermal sensor and method of making same
Assignee: Honeywell Inc
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Filing: 1999-09-13
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Granted: 2000-11-07
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Expires: 2019-09-13
Abstract
Abstract A two level microbridge infrared thermal detector having an upper detector planar section (a) comprising a temperature responsive detector of an oxide of vanadium having a high TCR and a resistivity in the range of 20K ohms to 50K ohms per square sheet resistance, and (b) being supported above a lower section by leg portions of an oxide of vanadium having a resistivity of approximately 500 ohms per square sheet resistance.
Inventors
- 👤 Robert E. Higashi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-07 18:10
CPC Classifications
G; G01; G01J; G01J5/00; G01J5/02; G01J5/08; G01J5/0853; G01J5/10; G01J5/20; H; H10; H10F; H10F19/00; H10F19/50; H10F39/00; H10F39/10; H10F39/107; H10F71/00
Claims Analysis
Total Claims: 24
Claim 1
Independent Claim
144 words
A two-level microbridge infrared thermal detector apparatus comprising: a pixel on a semiconductor substrate, said pixel having a lower section on the surface of said substrate and an upper detector planar section spaced from and immediately above said lower section; said lower section including integrated circuit means; said upper detector planar section (a) comprising a temperature responsive detector of an oxide of vanadium characterized by having a high TCR and a resistivity in the range of 5K ohms to 300K ohms per square sheet resistance, and (b) being supported above said lower section by leg portions of an oxide of vanadium characterized by having a resitivity in the range of 250 to 1,000 ohms per square sheet resistance; and said leg portions (a) being electrically connected to said detector and said integrated circuit means, and (b) providing thermal isolation for said temperature responsive detector.
Claim 2
Dependent Claim
144 words
A two-level microbridge infrared thermal detector apparatus comprising: a pixel on a semiconductor substrate, said pixel having a lower section on the surface of said substrate and an upper detector planar section spaced from and immediately above said lower section; said lower section including integrated circuit means; said upper detector planar section (a) comprising a temperature responsive detector of an oxide of vanadium characterized by having a high TCR and a resistivity in the range of 5K ohms to 300K ohms per square sheet resistance, and (b) being supported above said lower section by leg portions of an oxide of vanadium characterized by having a resitivity in the range of 250 to 1,000 ohms per square sheet resistance; and said leg portions (a) being electrically connected to said detector and said integrated circuit means, and (b) providing thermal isolation for said temperature responsive detector.
Claim 3
Dependent Claim
22 words
The thermal detector apparatus of claim 1 further characterized by an array of said pixels being positioned on a common semiconductor substrate.
Claim 4
Dependent Claim
23 words
The thermal detector apparatus of claim 2 further characterized by the upper detector planar section of each of said pixels including absorber means.
Claim 5
Dependent Claim
22 words
The thermal detector apparatus of claim 3 further characterized by including a reflective layer on said substrate below said upper detector section.
Claim 6
Dependent Claim
133 words
A two-level microbridge infrared thermal detector appratus comprising: a pixel on a semiconductor substrate, said pixel having a lower section the surface of said substrate and an upper detector planar section spaced from and immediately above said lower section; said lower section including integrated circuit means; said upper detector planar section (a) comprising a temperature responsive detector of an oxide of vanadium characterized by having a high TCR and a resistivity in the range of 20K ohms to 50K ohms per square sheet resistance and (b) being supported above said lower section by leg portions of an oxide of vanadium characterized by having a relatively low resitivity; and said leg portions (a) being electrically connected to said detector and said integrated circuit means, and (b) providing thermal isolation for said temperature responsive detector.
Claim 7
Dependent Claim
133 words
A two-level microbridge infrared thermal detector appratus comprising: a pixel on a semiconductor substrate, said pixel having a lower section the surface of said substrate and an upper detector planar section spaced from and immediately above said lower section; said lower section including integrated circuit means; said upper detector planar section (a) comprising a temperature responsive detector of an oxide of vanadium characterized by having a high TCR and a resistivity in the range of 20K ohms to 50K ohms per square sheet resistance and (b) being supported above said lower section by leg portions of an oxide of vanadium characterized by having a relatively low resitivity; and said leg portions (a) being electrically connected to said detector and said integrated circuit means, and (b) providing thermal isolation for said temperature responsive detector.
Claim 8
Dependent Claim
42 words
Apparatus or claim 5 further characterized by the ratio of the resistivity of said upper detector planar section to the resistivity of said upper detector planar section to the resistivity of said leg portion being in the range of 10:1 to 600:1.
Claim 9
Dependent Claim
22 words
The thermal detector apparatus of claim 6 further characterized by an array of said pixels being positioned on a common semiconductor substrate.
Claim 10
Dependent Claim
23 words
The thermal detector apparatus of claim 7 further characterized by the upper detector planar section of each of said pixels including absorber means.
Claim 11
Dependent Claim
22 words
The thermal detector apparatus of claim 8 further characterized by including a reflective layer on said substrate below said upper detector section.
Claim 12
Dependent Claim
134 words
A two-level microbridge uncooled infrared thermal detector apparatus comprising: and array of pixels on a semiconductor substrate, each of said pixels having a lower section on the surface of said substrate and associated upper detector planar section spaced from and immediately above said lower section; each of said lower section including integrated circuit means; and each of said upper detector planar sections (a) comprising a temperature responsive detector of an oxide of vanadium characterized by having a high TCR and a resistivity in the range of 5K ohms to 300K ohms per square sheet resistance, and (b) being electrically connected to the integrated circuit means of its associated lower section by conductors of and oxide of vanadium characterized by having a resistivity in the range of 250 to 1,000 ohms per square sheet resistance.
Claim 13
Dependent Claim
134 words
A two-level microbridge uncooled infrared thermal detector apparatus comprising: and array of pixels on a semiconductor substrate, each of said pixels having a lower section on the surface of said substrate and associated upper detector planar section spaced from and immediately above said lower section; each of said lower section including integrated circuit means; and each of said upper detector planar sections (a) comprising a temperature responsive detector of an oxide of vanadium characterized by having a high TCR and a resistivity in the range of 5K ohms to 300K ohms per square sheet resistance, and (b) being electrically connected to the integrated circuit means of its associated lower section by conductors of and oxide of vanadium characterized by having a resistivity in the range of 250 to 1,000 ohms per square sheet resistance.
Claim 14
Dependent Claim
27 words
The thermal detector apparatus of claim 10 further characterized by said conductors being leg portions which support said upper detector planar sections above their respective lower sections.
Claim 15
Dependent Claim
34 words
The thermal detector apparatus of claim 10 further characterized by said conductors (i) supporting said upper detector planar sections above their respective lower sections, and (ii) providing thermal isolation for said temperature responsive detectors.
Claim 16
Dependent Claim
18 words
The thermal detector apparatus of claim 12 further characterized by the upper detector planar sections including absorber means.
Claim 17
Dependent Claim
25 words
The thermal detector apparatus of claim 13 further characterized by including a reflective layer on said substrate below each of said upper detector planar sections.
Claim 18
Dependent Claim
125 words
A two-level microbridge uncooled infrared thermal detector appratus comprising; an array of pixels on a semiconductor substrate, each of said pixels having a lower section on the surface of said substrate and an associated upper detector planar section spaced from and immediately above said lower section; each of said lower sections including integrated circuit means; and each of said upper detector plan sections (a) comprising a temperature responsive detector of an oxide of vanadium characterized by having a high TCR and a resistivity in the range of 5K ohms to 300K ohms per square sheet resistance, and (b) being electrically connected to the integrated circuit means of its associated lower section by conductors of an oxide of vanadium characterized by having a relatively low resistivity.
Claim 19
Dependent Claim
125 words
A two-level microbridge uncooled infrared thermal detector appratus comprising; an array of pixels on a semiconductor substrate, each of said pixels having a lower section on the surface of said substrate and an associated upper detector planar section spaced from and immediately above said lower section; each of said lower sections including integrated circuit means; and each of said upper detector plan sections (a) comprising a temperature responsive detector of an oxide of vanadium characterized by having a high TCR and a resistivity in the range of 5K ohms to 300K ohms per square sheet resistance, and (b) being electrically connected to the integrated circuit means of its associated lower section by conductors of an oxide of vanadium characterized by having a relatively low resistivity.
Claim 20
Dependent Claim
27 words
The thermal detector apparatus of claim 15 further characterized by said conductors being leg portions which support said upper detector planar sections above their respective lower sections.
Claim 21
Dependent Claim
34 words
The thermal detector apparatus of claim 15 further characterized by said conductors (i) supporting said upper detector planar sections above their respective lower sections, and (ii) providing thermal isolation for said temperature responsive detectors.
Claim 22
Dependent Claim
32 words
Apparatus of claim 17 further characterized by the ratio of the resistivity of said temperature responsive detectors to the resistivity or said leg portions being in the range of 10:1 to 600:1.
Claim 23
Dependent Claim
18 words
The thermal detector apparatus of claim 18 further characterized by the upper detector planar sections including absorber means.
Claim 24
Dependent Claim
25 words
The thermal detector apparatus of claim 19 further characterized by including a reflective layer of said substrate below each of said upper detector planar sections.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2003-11-07 | 2004-05-08 | 2004-11-07 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2007-11-07 | 2008-05-08 | 2008-11-07 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2011-11-07 | 2012-05-08 | 2012-11-07 | $7700.00 | Window Closed / Lapsed |