US5450053A
Expired / Lapsed
US
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Use of vanadium oxide in microbolometer sensors
Assignee: Honeywell Inc
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Filing: 1993-06-29
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Granted: 1995-09-12
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Expires: 2013-06-29
Abstract
Abstract In a microbolometer infrared radiation sensor, a detector material (VO 2 ) having a high thermal coefficient of resistance to increase the sensitivity of the apparatus.
Inventors
- 👤 R. Andrew Wood
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-07 13:56
CPC Classifications
H; H01; H01Q; H01Q21/00; H01Q21/06; H01Q21/061; H01Q21/062; G; G01; G01J; G01J5/00; G01J5/10; G01J5/20; H01Q1/00; H01Q1/36; H01Q1/38; H01Q15/00; H01Q15/02; H01Q19/00; H01Q19/06; H01Q19/062; H01Q5/00; H01Q5/40; H01Q5/42; H01Q9/00; H01Q9/04; H01Q9/06; H01Q9/065; H01Q9/16; H10; H10F; H10F39/00; H10F39/80; H10F39/802
Claims Analysis
Total Claims: 30
Claim 1
Independent Claim
96 words
An infrared radiation detector comprising in combination: a semiconductor body having a depression formed in a first surface of the body; a thin film dielectric member attached to the first surface at least at one location and positioned to suspend the dielectric member as a thermally isolated structure over said depression; and, a thin film layer of vanadium oxide embedded in said dielectric member over said depression, said thin film layer having a high temperature coefficient of resistance; and, contacts to said thin film layer of vanadium oxide adapted to be connected to a measuring circuit.
Claim 2
Dependent Claim
96 words
An infrared radiation detector comprising in combination: a semiconductor body having a depression formed in a first surface of the body; a thin film dielectric member attached to the first surface at least at one location and positioned to suspend the dielectric member as a thermally isolated structure over said depression; and, a thin film layer of vanadium oxide embedded in said dielectric member over said depression, said thin film layer having a high temperature coefficient of resistance; and, contacts to said thin film layer of vanadium oxide adapted to be connected to a measuring circuit.
Claim 3
Dependent Claim
21 words
The detector according to claim 1 in which the thin film layer of vanadium oxide is of a thickness <1000 angstroms.
Claim 4
Dependent Claim
26 words
The detector according to claim 1 in which the thin film layer of vanadium oxide has a resistivity on the order of 1000 ohms per square.
Claim 5
Dependent Claim
16 words
The detector according to claim 1 in which the thin film dielectric is of silicon nitride.
Claim 6
Dependent Claim
16 words
The detector according to claim 1 in which the semiconductor body is of single crystalline silicon.
Claim 7
Dependent Claim
21 words
The infrared detector according to claim 1 further comprising: an antenna member coupled to the thin film layer of vanadium oxide.
Claim 8
Dependent Claim
23 words
The detector according to claim 6 wherein the antenna member comprises a metallic conductor shaped to optimize electromagnetic radiation of a predetermined wavelength.
Claim 9
Dependent Claim
21 words
The detector according to claim 7 wherein the antenna member comprises a dipole antenna disposed upon the thin film dielectric member.
Claim 10
Dependent Claim
30 words
The detector according to claim 8 further comprising an electrically conducting ground plane disposed on a second surface of the semiconductor body opposite the first surface of the semiconductor body.
Claim 11
Dependent Claim
14 words
The detector according to claim 9, wherein the ground plane is composed of copper.
Claim 12
Dependent Claim
36 words
The detector according to claim 10, wherein the ground plane is a thickness effective to reflect radiation incident on the first surface of the semiconductor body back through the semiconductor body and toward the antenna member.
Claim 13
Dependent Claim
16 words
The detector according to claim 11, wherein the copper ground plane is approximately 2000 Angstroms thick.
Claim 14
Dependent Claim
41 words
The detector of claim 8 wherein the antenna member comprises generally a bow-tie shape and wherein the bow-tie shaped antenna is electrically coupled to the thin film layer of vanadium oxide at the center, or "knot," of the bow-tie shaped antenna.
Claim 15
Dependent Claim
82 words
An infrared radiation detector comprising in combination: a thin film resistor of vanadium oxide encapsulated in thin film dielectric; a semiconductor body having a depression therein; the encapsulated thin film resistor of vanadium oxide and thin film dielectric forming a thin film member bridged across the depression so that at least a major portion of the thin film resistor is out of contact with the semiconductor body; and, contacts to said thin film resistor adapted to be connected to a measuring circuit.
Claim 16
Dependent Claim
82 words
An infrared radiation detector comprising in combination: a thin film resistor of vanadium oxide encapsulated in thin film dielectric; a semiconductor body having a depression therein; the encapsulated thin film resistor of vanadium oxide and thin film dielectric forming a thin film member bridged across the depression so that at least a major portion of the thin film resistor is out of contact with the semiconductor body; and, contacts to said thin film resistor adapted to be connected to a measuring circuit.
Claim 17
Dependent Claim
21 words
The detector according to claim 14 in which the thin film layer of vanadium oxide is of a thickness <1000 angstroms.
Claim 18
Dependent Claim
26 words
The detector according to claim 14 in which the thin film layer of vanadium oxide has a resistivity on the order of 1000 ohms per square.
Claim 19
Dependent Claim
16 words
The detector according to claim 14 in which the thin film dielectric is of silicon nitride.
Claim 20
Dependent Claim
16 words
The detector according to claim 14 in which the semiconductor body is of single crystalline silicon.
Claim 21
Dependent Claim
94 words
An infrared radiation detector comprising in combination: a single crystalline silicon substrate having a depression formed in a first surface of the substrate; a thin film silicon nitride member attached to the first surface at least at one location and positioned to be suspended over said depression as a thermally isolated structure; a thin film layer of vanadium oxide embedded in said silicon nitride member, said thin film layer having a high temperature coefficient of resistance; and, contacts to said thin film layer of vanadium oxide adapted to be connected to a measuring circuit.
Claim 22
Dependent Claim
94 words
An infrared radiation detector comprising in combination: a single crystalline silicon substrate having a depression formed in a first surface of the substrate; a thin film silicon nitride member attached to the first surface at least at one location and positioned to be suspended over said depression as a thermally isolated structure; a thin film layer of vanadium oxide embedded in said silicon nitride member, said thin film layer having a high temperature coefficient of resistance; and, contacts to said thin film layer of vanadium oxide adapted to be connected to a measuring circuit.
Claim 23
Dependent Claim
92 words
An infrared radiation detector comprising in combination: a thin film resistor of vanadium oxide embedded in a thin film silicon nitride member; a silicon substrate having a depression in the major surface thereof; the thin film resistor and the thin film silicon nitride member forming a thin film member fastened to the surface and bridged across the depression so that at least a major portion of the thin film resistor is out of contact with the substrate; and, contacts on said thin film resistor adapted to be connected to a measuring circuit.
Claim 24
Dependent Claim
92 words
An infrared radiation detector comprising in combination: a thin film resistor of vanadium oxide embedded in a thin film silicon nitride member; a silicon substrate having a depression in the major surface thereof; the thin film resistor and the thin film silicon nitride member forming a thin film member fastened to the surface and bridged across the depression so that at least a major portion of the thin film resistor is out of contact with the substrate; and, contacts on said thin film resistor adapted to be connected to a measuring circuit.
Claim 25
Dependent Claim
60 words
An infrared detector element comprising: a cavity in a semiconductor structure across one surface of which is suspended a resistor of vanadium oxide being suspended and supported by a thin film of dielectric material, said suspension being disposed such that at least a major portion of said vanadium oxide resistor is out of substantial thermal contact with said semiconductor structure.
Claim 26
Dependent Claim
60 words
An infrared detector element comprising: a cavity in a semiconductor structure across one surface of which is suspended a resistor of vanadium oxide being suspended and supported by a thin film of dielectric material, said suspension being disposed such that at least a major portion of said vanadium oxide resistor is out of substantial thermal contact with said semiconductor structure.
Claim 27
Dependent Claim
19 words
An infrared detector as set forth in claim 21 wherein said vanadium oxide resistor is a thin film resistor.
Claim 28
Dependent Claim
21 words
The infrared detector according to claim 21, further comprising an antenna member coupled to the thin film layer of vanadium oxide.
Claim 29
Dependent Claim
88 words
An infrared radiation detector element comprising a semiconductor structure having a cavity across which is suspended a highly sensitive detector material which has a thermal coefficient of resistance greater than metal, a film thickness of less than 1000 Å, and having film impedance in the range of 100 to 100,000 ohms, said detector material disposed upon a layer of a dielectric material which supports said highly sensitive detector material so that a major portion of said highly sensitive detector material is out of contact with said semiconductor structure.
Claim 30
Dependent Claim
88 words
An infrared radiation detector element comprising a semiconductor structure having a cavity across which is suspended a highly sensitive detector material which has a thermal coefficient of resistance greater than metal, a film thickness of less than 1000 Å, and having film impedance in the range of 100 to 100,000 ohms, said detector material disposed upon a layer of a dielectric material which supports said highly sensitive detector material so that a major portion of said highly sensitive detector material is out of contact with said semiconductor structure.
References Cited (Backward Citations)
US3484611A
Cited
US3619614A
Cited
DE2253214A1
Cited
US3801949A
Cited
US3896309A
Cited
US4472239A
Cited
US4654622A
Cited
US4750834A
Cited
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