Patent US6144155A successfully refreshed from Google Patents.
US6144155A
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US
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Electron emission device and display device using the same
Assignee: Pioneer Corp
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Filing: 1998-05-14
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Granted: 2000-11-07
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Expires: 2018-05-14
Abstract
Abstract An electron emission device exhibits a high electron emission efficiency. The device includes an electron supply layer of metal or semiconductor, an insulator layer formed on the electron supply layer, and a thin-film metal electrode formed on the insulator layer. The insulator layer is formed by oxidation or nitriding process of the electron supply layer and has a film thickness of 50 nm or greater. When an electric field is applied between the electron supply layer and the thin-film metal electrode, the electron emission device emits electrons.
Inventors
- 👤 Takamasa Yoshikawa
- 👤 Takashi Chuman
- 👤 Nobuyasu Negishi
- 👤 Shingo Iwasaki
- 👤 Kiyohide Ogasawara
- 👤 Hiroshi Ito
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 01:48
CPC Classifications
H; H01; H01J; H01J1/00; H01J1/02; H01J1/30; H01J1/312; B; B82; B82Y; B82Y10/00
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
88 words
An electron emission device comprising: an electron supply layer made of metal or semiconductor; an insulator layer formed on the electron supply layer; and a thin-film metal electrode formed on the insulator layer and facing a vacuum space, characterized in that said insulator layer formed by oxidation or nitriding process of said electron supply layer and having at a film thickness of 50 nm or greater, whereby the electron emission device emits electrons when an electric field is applied between the electron supply layer and the thin-film metal.
Claim 2
Dependent Claim
88 words
An electron emission device comprising: an electron supply layer made of metal or semiconductor; an insulator layer formed on the electron supply layer; and a thin-film metal electrode formed on the insulator layer and facing a vacuum space, characterized in that said insulator layer formed by oxidation or nitriding process of said electron supply layer and having at a film thickness of 50 nm or greater, whereby the electron emission device emits electrons when an electric field is applied between the electron supply layer and the thin-film metal.
Claim 3
Dependent Claim
32 words
An electron emission device according to claim 1, wherein said electron supply layer is made of silicon; and said insulator layer made of a substance selected form silicon oxide and silicon nitride.
Claim 4
Dependent Claim
115 words
An electron emission display device comprises: a pair of first and second substrates facing each other with a vacuum space in between; a plurality of electron emission devices provided on the first substrate; a collector electrode provided in the second substrate; and a fluorescent layer formed on the collector electrode, each of the electron emission devices comprising an electron supply layer of metal or semiconductor; an insulator layer formed on the electron supply layer; and a thin-film metal electrode formed on the insulator layer and facing a vacuum space, wherein said insulator layer formed by oxidation or nitriding process to said electron supply layer and having at a film thickness of 50 nm or greater.
Claim 5
Dependent Claim
115 words
An electron emission display device comprises: a pair of first and second substrates facing each other with a vacuum space in between; a plurality of electron emission devices provided on the first substrate; a collector electrode provided in the second substrate; and a fluorescent layer formed on the collector electrode, each of the electron emission devices comprising an electron supply layer of metal or semiconductor; an insulator layer formed on the electron supply layer; and a thin-film metal electrode formed on the insulator layer and facing a vacuum space, wherein said insulator layer formed by oxidation or nitriding process to said electron supply layer and having at a film thickness of 50 nm or greater.
Claim 6
Dependent Claim
33 words
An electron emission display device according to claim 3, wherein said electron supply layer is made of silicon; and said insulator layer made of a substance selected form silicon oxide and silicon nitride.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2003-11-07 | 2004-05-08 | 2004-11-07 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2007-11-07 | 2008-05-08 | 2008-11-07 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2011-11-07 | 2012-05-08 | 2012-11-07 | $7700.00 | Window Closed / Lapsed |