Electron emission device and display device for emitting electrons in response to an applied electric field using the electron emission device

Claim 2

An electron emission device comprising: an electron supply layer of semiconductor; an insulator layer wholly formed to be a contiguous layer with and on the electron supply layer; and a thin-film metal electrode formed on the insulator layer and facing a vacuum space; wherein said insulator layer is made of a polycrystal dielectric substance and has film thickness of 50 nm or greater and has a polycrystal phase with an average grain size of 5 to 100 nm as a major component and an amorphous phase as a minor component, whereby the electron emission device emits electrons passing through said insulator layer and said thin-film metal when an electric field is applied between the electron supply layer and the thin-film metal electrode.

Claim 3

An electron emission display device comprising: a pair of first and second substrates facing each other with a vacuum space in between; a plurality of electron emission devices provided on the first substrate, each electron emission device comprising; an electron supply layer of semiconductor; an insulator layer wholly formed to be a contiguous layer with and on the electron supply layer; and a thin-film metal electrode formed on the insulator layer and facing the vacuum space, wherein said insulator layer is made of a polycrystal dielectric substance and has a film thickness of 50 nm or greater and has a polycrystal phase with an average grain size of 5 to 100 nm as a major component and an amorphous phase as a minor component, whereby the electron emission device emits electrons passing through said insulator layer and said thin-film metal when an electric field is applied between the electron supply layer and the thin-film metal electrode; a collector electrode provided in the second substrate; and a fluorescent layer formed on the collector electrode.

Claim 4

An electron emission display device comprising: a pair of first and second substrates facing each other with a vacuum space in between; a plurality of electron emission devices provided on the first substrate, each electron emission device comprising; an electron supply layer of semiconductor; an insulator layer wholly formed to be a contiguous layer with and on the electron supply layer; and a thin-film metal electrode formed on the insulator layer and facing the vacuum space, wherein said insulator layer is made of a polycrystal dielectric substance and has a film thickness of 50 nm or greater and has a polycrystal phase with an average grain size of 5 to 100 nm as a major component and an amorphous phase as a minor component, whereby the electron emission device emits electrons passing through said insulator layer and said thin-film metal when an electric field is applied between the electron supply layer and the thin-film metal electrode; a collector electrode provided in the second substrate; and a fluorescent layer formed on the collector electrode.

Claim 5

An electron emission display device comprising: a pair of first and second substrates facing each other with a vacuum in between; a plurality of ohmic electrodes formed in parallel on an inner surface of the first substrate; a plurality of electron emission devices provided on the ohmic electrodes, each of the electron emission devices comprising an electron supply layer of semiconductor; an insulator layer wholly formed to be a contiguous layer with and on the electron supply layer; and a thin-film metal electrode formed on the insulator layer and facing the vacuum space, wherein said insulator layer is made of a polycrystal dielectric substance and has a film thickness of 50 nm or greater and has a polycrystal phase with an average grain size of 5 to 100 nm as a major component and an amorphous phase as a minor component; a plurality of bus electrodes formed on parts of the thin-film metal electrodes and extending in parallel to one another and perpendicular to the ohmic electrodes so as to electrically connect adjoining thin-film metal electrodes; a plurality of collector electrodes provided in the second transparent substrate; and fluorescent layers formed on the collector electrodes.

Claim 6

An electron emission display device comprising: a pair of first and second substrates facing each other with a vacuum in between; a plurality of ohmic electrodes formed in parallel on an inner surface of the first substrate; a plurality of electron emission devices provided on the ohmic electrodes, each of the electron emission devices comprising an electron supply layer of semiconductor; an insulator layer wholly formed to be a contiguous layer with and on the electron supply layer; and a thin-film metal electrode formed on the insulator layer and facing the vacuum space, wherein said insulator layer is made of a polycrystal dielectric substance and has a film thickness of 50 nm or greater and has a polycrystal phase with an average grain size of 5 to 100 nm as a major component and an amorphous phase as a minor component; a plurality of bus electrodes formed on parts of the thin-film metal electrodes and extending in parallel to one another and perpendicular to the ohmic electrodes so as to electrically connect adjoining thin-film metal electrodes; a plurality of collector electrodes provided in the second transparent substrate; and fluorescent layers formed on the collector electrodes.

Claim 7

An electron emission display device according to claim 3 further comprising a second auxiliary insulator layer with openings formed to separate the surfaces of the thin-film metal electrodes into a plurality of electron emission regions.

Claim 8

An electron emission display device according to claim 4, wherein the second auxiliary insulator layer covers the bus electrodes.