Chemical vapor deposition apparatus

Claim 2

A chemical vapor deposition apparatus, comprising: a reactor; a substrate holder for holding a substrate in the reactor; a gas delivery guide for delivering a source gas to the reactor; the gas delivery guide includes a gas delivery port in a center of the gas delivery guide, and means for delivering the source gas to a surface of the substrate and for subsequently guiding the source gas along the surface of the substrate mounted on the substrate holder in a laminar flow in a direction that is substantially parallel with the surface of the substrate so that a thickness distribution of a boundary layer of the source gas formed on the surface of the substrate is substantially constant or becomes thinner gradually in a direction of flow along the surface of the substrate; and the delivering means includes an opposing surface facing the substrate with no obstructions between the substrate and the opposing surface, and the opposing surface is a curved surface of rotation obtained by rotating about a rotation axis on a same axis as the center of the gas delivery guide a curve where, when a distance from the center of the gas delivery guide is r and a distance between the opposing surface and the substrate is h, a product of r and h is substantially constant.

Claim 3

The chemical vapor deposition apparatus of claim 1, wherein the curve is a hyperbola.

Claim 4

A chemical vapor deposition apparatus, comprising: a reactor; a substrate holder for holding a substrate in the reactor; a gas delivery guide for delivering a source gas to the reactor; the gas delivery guide includes means for delivering the source gas to a surface of the substrate mounted on the substrate holder in a central portion of the surface and for subsequently guiding the source gas in a laminar flow along the surface of the substrate in a direction that is substantially parallel with the surface of the substrate so that a thickness distribution of a boundary layer of the source gas formed on the surface of the substrate is substantially constant or becomes thinner gradually in the direction of laminar flow along the surface of the substrate; the gas delivery guide has an opposing surface facing the substrate and a shape such that a direct distance between the gas delivery guide opposing surface and the substrate becomes smaller from the gas delivery port to an outer edge of the gas delivery guide; and wherein the opposing surface of the gas delivery guide which faces the substrate is a hyperboloid of revolution obtained by rotating about a center axis a hyperbola where, when the distance from the center axis on said opposing surface is r and the distance between said opposing surface and the substrate is h, the product of r and h is substantially constant.

Claim 5

A chemical vapor deposition apparatus, comprising: a reactor; a substrate holder for holding a substrate in the reactor; a gas delivery guide for delivering a source gas to the reactor; the gas delivery guide includes means for delivering the source gas to a surface of the substrate mounted on the substrate holder in a central portion of the surface and for subsequently guiding the source gas in a laminar flow along the surface of the substrate in a direction that is substantially parallel with the surface of the substrate so that a thickness distribution of a boundary layer of the source gas formed on the surface of the substrate is substantially constant or becomes thinner gradually in the direction of laminar flow along the surface of the substrate; the gas delivery guide has an opposing surface facing the substrate and a shape such that a direct distance between the gas delivery guide opposing surface and the substrate becomes smaller from the gas delivery port to an outer edge of the gas delivery guide; and wherein the opposing surface of the gas delivery guide which faces the substrate is a hyperboloid of revolution obtained by rotating about a center axis a hyperbola where, when the distance from the center axis on said opposing surface is r and the distance between said opposing surface and the substrate is h, the product of r and h is substantially constant.

Claim 6

The chemical vapor deposition apparatus of claim 3, wherein: the gas delivery guide includes a gas delivery port in a center of the gas delivery guide; and a center axis of the gas delivery port is on a same axis as a center of the substrate mounted on the substrate holder.

Claim 7

The chemical vapor deposition apparatus of claim 4, further comprising a temperature controlling mechanism on the gas delivery guide for preventing thin film accumulation on the gas delivery guide surface.

Claim 8

The chemical vapor deposition apparatus of claim 4, wherein a size of the opposing surface of the gas delivery guide which faces the substrate is greater than a size of a surface of the substrate.

Claim 9

The chemical vapor deposition apparatus of claim 3, further comprising a vaporizer which vaporizes a precursor when the source gas delivery system uses a precursor which is a liquid at normal temperature and pressure.