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US6139922A
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Tantalum and tantalum-based films formed using fluorine-containing source precursors and methods of making the same
Assignee: Gelest Inc
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Filing: 1999-05-18
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Granted: 2000-10-31
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Expires: 2019-05-18
Abstract
Abstract A method for chemical vapor deposition of a film comprising tantalum onto a substrate includes introducing into a deposition chamber: (i) a substrate; (ii) a source precursor in the vapor state; and (iii) a reactant gas, and maintaining the temperature of the substrate within the chamber as from about 70° C. to about 675° C. for a period of time sufficient to deposit a film comprising tantalum on the substrate. The source precursor has a formula (I): Ta(F.sub.5-q-p)(X.sub.q-p)(R.sub.p) (I) wherein X is selected from the group consisting of bromine, iodine, chlorine, and combinations thereof; q is an integer from 0 to 4; p is an integer from 0 to 4; and R is selected from the group consisting of hydrogen and lower alkyl.
Inventors
- 👤 Alain E. Kaloyeros
- 👤 Barry C. Arkles
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 01:58
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/032; H10W20/033; H10W20/035; C; C07; C07F; C07F9/00; C23; C23C; C23C16/00; C23C16/06; C23C16/08; C23C16/14; C23C16/18; C23C16/22; C23C16/30; C23C16/305; C23C16/34; C23C16/42; H10W20/047; H10W20/048
Claims Analysis
Total Claims: 31
Claim 1
Independent Claim
137 words
A method for the chemical vapor deposition of a film comprising tantalum onto a substrate, comprising (a) introducing into a deposition chamber: (i) a substrate; (ii) a single source precursor comprising fluorine in a vapor state and having formula (I): Ta(F.sub.5-q-p)(X.sub.q-p)(R.sub.p) (I) wherein X is selected from the group consisting of bromine, iodine, chlorine, and combinations thereof; q is an integer from 0 to 4; p is an integer from 0 to 4; and R is selected from the group consisting of hydrogen and lower alkyl; and (iii) a reactant gas; and (b) maintaining a temperature of said substrate within said chamber of from about 70° C. to about 675° C. for a period of time sufficient to react said single source precursor with said reactant gas and to deposit a film comprising tantalum on said substrate.
Claim 2
Independent Claim
137 words
A method for the chemical vapor deposition of a film comprising tantalum onto a substrate, comprising (a) introducing into a deposition chamber: (i) a substrate; (ii) a single source precursor comprising fluorine in a vapor state and having formula (I): Ta(F.sub.5-q-p)(X.sub.q-p)(R.sub.p) (I) wherein X is selected from the group consisting of bromine, iodine, chlorine, and combinations thereof; q is an integer from 0 to 4; p is an integer from 0 to 4; and R is selected from the group consisting of hydrogen and lower alkyl; and (iii) a reactant gas; and (b) maintaining a temperature of said substrate within said chamber of from about 70° C. to about 675° C. for a period of time sufficient to react said single source precursor with said reactant gas and to deposit a film comprising tantalum on said substrate.
Claim 3
Dependent Claim
24 words
The method according to claim 1, wherein the reactant gas is selected from the group consisting of hydrogen, nitrogen, ammonia, hydrazine, and mixtures thereof.
Claim 4
Dependent Claim
12 words
The method according to claim 2, wherein said reactant gas is hydrogen.
Claim 5
Dependent Claim
13 words
The method according to claim 2, wherein the reactant gas further comprises helium.
Claim 6
Dependent Claim
16 words
The method according to claim 1, wherein step (a) further comprises introducing (iv) a carrier gas.
Claim 7
Dependent Claim
42 words
The method according to claim 5, wherein said at least one carrier gas is selected from the group consisting of hydrogen, helium, oxygen, fluorine, neon, chlorine, argon, krypton, xenon, carbon monoxide, carbon dioxide, ammonia, hydrazine, nitrous oxide, water vapor, and mixtures thereof.
Claim 8
Dependent Claim
28 words
The method according to claim 1, wherein a flow rate of said at least one reactant gas is greater than 0 and no greater than about 10 l/min.
Claim 9
Dependent Claim
45 words
The method according to claim 1, further comprising introducing into said chamber a plasma having a plasma power density of from about 0.01 W/cm 2 to about 10 W/cm 2 for a period of time sufficient to deposit a film comprising tantalum on the substrate.
Claim 10
Dependent Claim
22 words
The method according to claim 8, wherein said plasma has a frequency of from about 0 Hz to about 10 8 kHz.
Claim 11
Dependent Claim
67 words
The method according to claim 1, further comprising applying an electrical bias to said substrate, wherein said electrical bias is at least one of a direct current bias, a low radio frequency bias of less than 500 kHz, a high radio frequency bias of from 500 kHz to 10 6 kHz, or a microwave frequency bias of from 10 6 kHz to about 10 8 kHz bias.
Claim 12
Dependent Claim
31 words
The method according to claim 10, wherein said electrical bias has a power density greater than 0 Watts/cm 2 and less than or equal to about 10 3 Watts/cm 2 .
Claim 13
Dependent Claim
30 words
The method according to claim 11, wherein said electrical bias has a power density greater than 0.001 Watts/cm 2 and less than or equal to about 10 Watts/cm 2 .
Claim 14
Dependent Claim
27 words
The method according to claim 1, wherein said substrate is a semiconductor substrate comprising a material selected from the group consisting of silicon, germanium, and gallium arsenide.
Claim 15
Dependent Claim
22 words
The method according to claim 1, wherein said substrate comprises a material selected from the group consisting of metal, glass, and polymer.
Claim 16
Dependent Claim
49 words
The method according to claim 14, wherein said substrate is a metal selected from the group consisting of aluminum, beryllium, cadmium, cerium, chromium, cobalt, copper, gallium, gold, lead, manganese, molybdenum, nickel, palladium, platinum, rhenium, rhodium, silver, steel, iron, strontium, tin, titanium, tungsten, zinc, zirconium, alloys thereof, and compounds thereof.
Claim 17
Dependent Claim
25 words
The method according to claim 1, wherein said temperature of said substrate within said chamber is maintained from about 250° C. to about 500° C.
Claim 18
Dependent Claim
13 words
The method according to claim 1, wherein said source precursor is tantalum pentafluoride.
Claim 19
Dependent Claim
40 words
The method according to claim 1, wherein said film comprising tantalum is a pure tantalum film; said reactant gas is hydrogen; and said temperature of said substrate within said chamber is maintained from about 100° C. to about 675° C.
Claim 20
Dependent Claim
40 words
The method according to claim 18, wherein step (a) further comprises introducing (iv) a carrier gas selected from the group consisting of hydrogen, helium, oxygen, fluorine, neon, chlorine, argon, krypton, xenon, carbon monoxide, carbon dioxide, water vapor, and mixtures thereof.
Claim 21
Dependent Claim
53 words
The method according to claim 1, wherein said film comprising tantalum is a TaSi y film, wherein y is greater than 0 and less than or equal to about 3; step (a) further comprises introducing into said chamber: (iv) a compound comprising silicon in a vapor state; and said reactant gas is hydrogen.
Claim 22
Dependent Claim
40 words
The method according to claim 20, wherein step (a) further comprises introducing (v) a carrier gas selected from the group consisting of hydrogen, helium, oxygen, fluorine, neon, chlorine, argon, krypton, xenon, carbon monoxide, carbon dioxide, water vapor, and mixtures thereof.
Claim 23
Dependent Claim
34 words
The method according to claim 20, wherein said compound comprising silicon has formula (II): Si(F.sub.4-r-s)(X.sub.r-s)(R.sub.s) (II) wherein r is an integer from 0 to 3, and s is an integer from 0 to 3.
Claim 24
Dependent Claim
39 words
The method according to claim 1, wherein said film comprising tantalum is a TaN x film, wherein x is greater than 0 and less than or equal to about 2; and said reactant gas comprises a gas comprising nitrogen.
Claim 25
Dependent Claim
24 words
The method according to claim 23, wherein said gas comprising nitrogen is selected from the group consisting of ammonia, nitrogen, hydrazine, and mixtures thereof.
Claim 26
Dependent Claim
45 words
The method according to claim 23, wherein step (a) further comprises introducing (iv) a carrier gas selected from the group consisting of hydrogen, helium, oxygen, fluorine, neon, chlorine, argon, krypton, xenon, carbon monoxide, carbon dioxide, water vapor, nitrous oxide, ammonia, nitrogen, hydrazine, and mixtures thereof.
Claim 27
Dependent Claim
72 words
The method according to claim 1, wherein said film comprising tantalum is a TaN x Si y film, wherein x is greater than 0 and less than or equal to about 2 and y is greater than 0 and less than or equal to about 3; said reactant gas comprises a gas comprising nitrogen; and step (a) further comprises introducing into said chamber: (iv) a compound comprising silicon in a vapor state.
Claim 28
Dependent Claim
45 words
The method according to claim 26, wherein step (a) further comprises introducing (v) a carrier gas selected from the group consisting of hydrogen, helium, oxygen, fluorine, neon, chlorine, argon, krypton, xenon, nitrogen, ammonia, hydrazine, nitrous oxide, carbon monoxide, carbon dioxide, water vapor, and mixtures thereof.
Claim 29
Dependent Claim
34 words
The method according to claim 26, wherein said compound comprising silicon has formula (II): Si(F.sub.4-r-s)(X.sub.r-s)(R.sub.s) (II) wherein r is an integer from 0 to 3, and s is an integer from 0 to 3.
Claim 30
Dependent Claim
123 words
The method according to claim 1, further comprising: (c) depositing a second film comprising tantalum on said film deposited on said substrate for forming a multilayered structure while said substrate remains fixed in said chamber, wherein said second film comprising tantalum is selected from the group consisting of a pure tantalum film, a TaN x film, wherein x is greater than 0 and less than or equal to about 2; a TaSi y film, wherein y is greater than 0 and less than or equal to about 3; and a TaN x Si y film, wherein x is greater than 0 and less than or equal to about 2 and y is greater than 0 and less than or equal to about 3.
Claim 31
Dependent Claim
47 words
The method according to claim 1, wherein said substrate comprises silicon; and said method further comprises: (c) heating said substrate and said deposited film comprising tantalum to a temperature of from about 700° C. to about 950° C. for providing silicon to said deposited film comprising tantalum.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2003-10-31 | 2004-05-01 | 2004-10-31 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2007-10-31 | 2008-05-01 | 2008-10-31 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2011-10-31 | 2012-05-01 | 2012-10-31 | $7700.00 | Window Closed / Lapsed |