US6137134A
Expired / Lapsed
US
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Semiconductor memory device
Assignee: NEC Electronics Corp
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Filing: 1998-05-22
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Granted: 2000-10-24
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Expires: 2018-05-22
Abstract
Abstract A semiconductor memory device includes a floating gate, a control gate, source and drain regions, a lightly doped region of the second conductivity type, and a silicide layer. The floating gate is formed on a semiconductor substrate of the first conductivity type via a gate insulating film. The control gate is formed on the floating gate via an insulating film. The source and drain regions are formed by diffusing an impurity of the second conductivity type in the surface of the semiconductor substrate on the two sides of the floating gate. The lightly doped region is formed with a surface exposed at a position distant from the floating gate in at least the source region. The lightly doped region has an impurity dose lower than that of the source region. The silicide layer is formed on the exposed surface of the lightly doped region.
Inventors
- 👤 Kenichiro Nakagawa
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 16:51
CPC Classifications
H; H10; H10B; H10B41/00; H10B41/30; H10D; H10D30/00; H10D30/60; H10D30/68; H10D30/681; H10D30/684; H10D30/685
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
165 words
A semiconductor memory device comprising: a floating gate formed on a semiconductor substrate of a first conductivity type via a gate insulating film; a control gate formed on said floating gate via an insulating film; source and drain regions formed by diffusing an impurity of a second conductivity type in a top surface of said semiconductor substrate on two sides of said floating gate, wherein said source region is formed in a groove of said semiconductor substrate; a lightly doped region of the second conductivity type formed with a surface exposed at a position distant from said floating gate in the source and drain regions, the lightly doped region having an impurity dose lower than an impurity dose of the source region, wherein an impurity concentration of the position distant from said floating gate in at least the source region is lighter than that of a position near said floating gate; and a silicide layer formed on the exposed surface of the lightly doped region.
Claim 2
Dependent Claim
165 words
A semiconductor memory device comprising: a floating gate formed on a semiconductor substrate of a first conductivity type via a gate insulating film; a control gate formed on said floating gate via an insulating film; source and drain regions formed by diffusing an impurity of a second conductivity type in a top surface of said semiconductor substrate on two sides of said floating gate, wherein said source region is formed in a groove of said semiconductor substrate; a lightly doped region of the second conductivity type formed with a surface exposed at a position distant from said floating gate in the source and drain regions, the lightly doped region having an impurity dose lower than an impurity dose of the source region, wherein an impurity concentration of the position distant from said floating gate in at least the source region is lighter than that of a position near said floating gate; and a silicide layer formed on the exposed surface of the lightly doped region.
Claim 3
Dependent Claim
59 words
A device according to claim 1, wherein said device further comprises a side wall made of an insulating film on side surfaces of said floating gate and said control gate on at least the source region side, and the lightly doped region is formed at a position distant from said floating gate by a thickness of said side wall.
Claim 4
Dependent Claim
32 words
A device according to claim 1, wherein the groove is formed in said semiconductor substrate and extends to an area deeper than a diffusion depth of the impurity forming the source region.
Claim 5
Dependent Claim
31 words
A device according to claim 1, wherein said floating gate, said control gate, said source region, said drain region, the lightly doped region, and said silicide layer constitute a memory cell.
Claim 6
Dependent Claim
92 words
A device according to claim 4, further comprising: a memory cell array constituted by a plurality of memory cells sharing said source region; a common source region in which source regions of said memory cells constituting said memory cell array are continuously formed; a source contact formed on said silicide layer in the common source region, said source contact being electrically connected to the common source region via said silicide layer and the lightly doped impurity region; and a plurality of drain contacts individually formed in drain regions of said memory cells.
Claim 7
Dependent Claim
29 words
A device according to claim 1, wherein said silicide layer is formed in said groove at a level below said source region and in contact with said source region.
Claim 8
Dependent Claim
24 words
A device according to claim 1, wherein said groove has a depth of about 0.3 μm below said top surface of said semiconductor substrate.
Claim 9
Dependent Claim
49 words
A device according to claim 1, wherein said source and said drain regions have a first impurity concentration to increase a write/erase speed, the lightly doped region has a second impurity concentration to form the silicide layer, and the second impurity concentration is lower than the first impurity concentration.
References Cited (Backward Citations)
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 2003-10-24 | 2004-04-24 | 2004-10-24 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2007-10-24 | 2008-04-24 | 2008-10-24 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2011-10-24 | 2012-04-24 | 2012-10-24 | $7700.00 | Window Closed / Lapsed |