Semiconductor device

Abstract

Abstract PURPOSE:To inhibit the hot electron effect and to obtain a semiconductor device suitable for miniaturization, by selectively forming, on a semiconductor region, a source/drain impurity region having an opposite conductivity to that of the semiconductor region such that the surface density thereof is less than a particular value. CONSTITUTION:A field oxide film 102 is grown selectively on a P type silicon substrate 101, while a gate oxide film is grown an active region. A polycrystalline silicon is caused to grow thereon with an N type impurity diffused in it to form a gate electrode 104. An N type impurity diffusion layer 105 constituting a source and a drain is formed by implanting phosphorus ions such that the surface density thereof is 10<18>cm<-3> or less. Molybdenum is then adhered on the surface thereof, and heat treated to selectively form a silicide layer 106. A PSG film 107 is grown thereon and heat treated for causing it to sag. An aperture 108 is formed by photoetching. Finally, aluminium is adhered thereon to form an aluminium wiring electrode 109.

Inventors

• 👤 Masayuki Yanagisawa
• 👤 柳澤　正之

Bibliographic Details