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US6136703A
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Methods for forming phosphorus- and/or boron-containing silica layers on substrates
Assignee: Micron Technology Inc
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Filing: 1998-09-03
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Granted: 2000-10-24
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Expires: 2018-09-03
Abstract
Abstract A method of forming a phosphorus- and/or boron-containing silica layer, such as a PSG, BSG, or BPSG layer, on a substrate, such as a semiconductor substrate or substrate assembly.
Inventors
- 👤 Brian A. Vaartstra
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 01:59
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/69; H10P14/692; H10P14/6921; H10P14/6922; H10P14/6923; C; C23; C23C; C23C16/00; C23C16/22; C23C16/30; C23C16/40; C23C16/401; H10P14/66; H10P14/668; H10P14/6681; H10P14/6684; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/6336; H10P14/6686
Claims Analysis
Total Claims: 26
Claim 1
Independent Claim
154 words
A method of manufacturing a semiconductor structure, the method comprising: providing a semiconductor substrate or substrate assembly; providing one or more sources of silicon in the form of a liquid or a gas; providing one or more sources of a nonsilicon-containing reaction gas in the form of a liquid or a gas; providing one or more liquid compounds of the formulas B(OR 3 ) 3 , P(OR 4 ) 3 , (O)P(OR 5 ) 3 , wherein each R 3 , R 4 , and R 5 group is independently an alkyl or alkenyl group; vaporizing each of the compounds provided as liquids to form gases; directing the gases toward the semiconductor substrate or substrate assembly to form a condensed liquid on a surface of the substrate or substrate assembly; and thermally treating the condensed liquid to form a phosphorus- and/or boron-containing silica layer on a surface of the semiconductor substrate or substrate assembly.
Claim 2
Independent Claim
154 words
A method of manufacturing a semiconductor structure, the method comprising: providing a semiconductor substrate or substrate assembly; providing one or more sources of silicon in the form of a liquid or a gas; providing one or more sources of a nonsilicon-containing reaction gas in the form of a liquid or a gas; providing one or more liquid compounds of the formulas B(OR 3 ) 3 , P(OR 4 ) 3 , (O)P(OR 5 ) 3 , wherein each R 3 , R 4 , and R 5 group is independently an alkyl or alkenyl group; vaporizing each of the compounds provided as liquids to form gases; directing the gases toward the semiconductor substrate or substrate assembly to form a condensed liquid on a surface of the substrate or substrate assembly; and thermally treating the condensed liquid to form a phosphorus- and/or boron-containing silica layer on a surface of the semiconductor substrate or substrate assembly.
Claim 3
Dependent Claim
24 words
The method of claim 1 wherein the surface of the semiconductor substrate or substrate assembly comprises one or more small high aspect ratio openings.
Claim 4
Dependent Claim
30 words
The method of claim 1 wherein the step of vaporizing comprises using a chemical vapor deposition technique selected from the group of flash vaporization, bubbling, microdroplet formation, and combinations thereof.
Claim 5
Dependent Claim
17 words
The method of claim 1 wherein the semiconductor substrate comprises a silicon wafer or gallium arsenide wafer.
Claim 6
Dependent Claim
28 words
The method of claim 1 wherein each R 3 , R 4 , and R 5 group is a (C 1 -C 8 ) alkyl or alkenyl group.
Claim 7
Dependent Claim
28 words
The method of claim 5 wherein each R 3 , R 4 , and R 5 group is a (C 1 -C 5 ) alkyl or alkenyl group.
Claim 8
Dependent Claim
28 words
The method of claim 6 wherein each R 3 , R 4 , and R 5 group is a (C 1 -C 4 ) alkyl or alkenyl moiety.
Claim 9
Dependent Claim
15 words
The method of claim 1 wherein the one or more sources of silicon are gases.
Claim 10
Dependent Claim
18 words
The method of claim 8 wherein the one or more sources of silicon gases comprise SiH 4 .
Claim 11
Dependent Claim
50 words
The method of claim 1 wherein the one or more sources of silicon comprise compounds of the formula SiX p Y 4-p , wherein X=halide or hydrogen, Y=hydrogen, R 1 , or OR 2 , wherein each R 1 and R 2 group is independently an organic group, and p=0-4.
Claim 12
Dependent Claim
22 words
The method of claim 10 wherein each R 1 and R 2 group is a (C 1 -C 8 ) organic group.
Claim 13
Dependent Claim
22 words
The method of claim 11 wherein each R 1 and R 2 group is a (C 1 -C 5 ) organic group.
Claim 14
Dependent Claim
24 words
The method of claim 12 wherein each R 1 and R 2 group is a (C 1 -C 4 ) alkyl or alkenyl moiety.
Claim 15
Dependent Claim
41 words
The method of claim 1 wherein the one or more sources of a nonsilicon-containing reaction gas comprise O 2 , O 3 , N 2 O, NO 2 , NO, H 2 O, H 2 O 2 , or mixtures thereof.
Claim 16
Dependent Claim
29 words
The method of claim 14 wherein the one or more sources of a nonsilicon-containing reaction gas comprise H 2 O, H 2 O 2 , or a mixture thereof.
Claim 17
Dependent Claim
29 words
The method of claim 15 further comprising a step of vaporizing the H 2 O, H 2 O 2 , or a mixture thereof to form a reaction gas.
Claim 18
Dependent Claim
19 words
The method of claim 1 wherein the phosphorus- and/or boron-containing silica layer is a PSG, BSG, or BPSG layer.
Claim 19
Dependent Claim
36 words
The method of claim 1 wherein the step of thermally treating comprises exposing the condensed liquid on a surface of the substrate or substrate assembly to a temperature of about 200° C. to about 1000° C.
Claim 20
Independent Claim
186 words
A method of manufacturing a semiconductor structure, the method comprising: providing a semiconductor substrate or substrate assembly; providing one or more compounds of the formula SiX p Y 4-p in the form of a liquid or a gas, wherein X=halide or hydrogen, Y=hydrogen, R 1 , or OR 2 , wherein each R 1 and R 2 group is independently an organic group, and p=0-4; providing H 2 O, H 2 O 2 , or a mixture thereof in liquid form; providing one or more liquid compounds of the formulas B(OR 3 ) 3 , P(OR 4 ) 3 , (O)P(OR 5 ) 3 , or mixtures thereof, wherein each R 3 , R 4 , and R 5 group is independently an alkyl or alkenyl group; vaporizing each of the compounds provided as liquids to form gases; directing the gases toward the semiconductor substrate or substrate assembly to form a condensed liquid on a surface of the substrate or substrate assembly; and thermally treating the condensed liquid to form a phosphorus- and/or boron-containing silica layer on a surface of the semiconductor substrate or substrate assembly.
Claim 21
Independent Claim
186 words
A method of manufacturing a semiconductor structure, the method comprising: providing a semiconductor substrate or substrate assembly; providing one or more compounds of the formula SiX p Y 4-p in the form of a liquid or a gas, wherein X=halide or hydrogen, Y=hydrogen, R 1 , or OR 2 , wherein each R 1 and R 2 group is independently an organic group, and p=0-4; providing H 2 O, H 2 O 2 , or a mixture thereof in liquid form; providing one or more liquid compounds of the formulas B(OR 3 ) 3 , P(OR 4 ) 3 , (O)P(OR 5 ) 3 , or mixtures thereof, wherein each R 3 , R 4 , and R 5 group is independently an alkyl or alkenyl group; vaporizing each of the compounds provided as liquids to form gases; directing the gases toward the semiconductor substrate or substrate assembly to form a condensed liquid on a surface of the substrate or substrate assembly; and thermally treating the condensed liquid to form a phosphorus- and/or boron-containing silica layer on a surface of the semiconductor substrate or substrate assembly.
Claim 22
Dependent Claim
31 words
The method of claim 19 wherein the surface of the semiconductor substrate or substrate assembly comprises one or more small high aspect ratio openings which are filled by the condensed liquid.
Claim 23
Independent Claim
142 words
A method of forming a silica layer on a substrate, the method comprising: providing a substrate; providing one or more sources of silicon in the form of a liquid or a gas; providing one or more sources of a nonsilicon-containing reaction gas in the form of a liquid or a gas; providing one or more liquid compounds of the formulas B(OR 3 ) 3 , P(OR 4 ) 3 , (O)P(OR 5 ) 3 , wherein each R 3 , R 4 , and R 5 group is independently an alkyl or alkenyl group; vaporizing each of the compounds provided as liquids to form gases; directing the gases toward the substrate to form a condensed liquid on a surface of the substrate; and thermally treating the condensed liquid to form a phosphorus- and/or boron-containing silica layer on a surface of the substrate.
Claim 24
Independent Claim
142 words
A method of forming a silica layer on a substrate, the method comprising: providing a substrate; providing one or more sources of silicon in the form of a liquid or a gas; providing one or more sources of a nonsilicon-containing reaction gas in the form of a liquid or a gas; providing one or more liquid compounds of the formulas B(OR 3 ) 3 , P(OR 4 ) 3 , (O)P(OR 5 ) 3 , wherein each R 3 , R 4 , and R 5 group is independently an alkyl or alkenyl group; vaporizing each of the compounds provided as liquids to form gases; directing the gases toward the substrate to form a condensed liquid on a surface of the substrate; and thermally treating the condensed liquid to form a phosphorus- and/or boron-containing silica layer on a surface of the substrate.
Claim 25
Independent Claim
174 words
A method of forming a silica layer on a substrate, the method comprising: providing a substrate; providing one or more compounds of the formula SiX p Y 4-p in the form of a liquid or a gas, wherein X=halide or hydrogen, Y=hydrogen, R 1 , or OR 2 , wherein each R 1 and R 2 group is independently an organic group, and p=0-4; providing H 2 O, H 2 O 2 , or a mixture thereof in liquid form; providing one or more liquid compounds of the formulas B(OR 3 ) 3 , P(OR 4 ) 3 , (O)P(OR 5 ) 3 , or mixtures thereof, wherein each R 3 , R 4 , and R 5 group is independently an alkyl or alkenyl group; vaporizing each of the compounds provided as liquids to form gases; directing the gases toward the substrate to form a condensed liquid on a surface of the substrate; and thermally treating the condensed liquid to form a phosphorus- and/or boron-containing silica layer on a surface of the substrate.
Claim 26
Independent Claim
174 words
A method of forming a silica layer on a substrate, the method comprising: providing a substrate; providing one or more compounds of the formula SiX p Y 4-p in the form of a liquid or a gas, wherein X=halide or hydrogen, Y=hydrogen, R 1 , or OR 2 , wherein each R 1 and R 2 group is independently an organic group, and p=0-4; providing H 2 O, H 2 O 2 , or a mixture thereof in liquid form; providing one or more liquid compounds of the formulas B(OR 3 ) 3 , P(OR 4 ) 3 , (O)P(OR 5 ) 3 , or mixtures thereof, wherein each R 3 , R 4 , and R 5 group is independently an alkyl or alkenyl group; vaporizing each of the compounds provided as liquids to form gases; directing the gases toward the substrate to form a condensed liquid on a surface of the substrate; and thermally treating the condensed liquid to form a phosphorus- and/or boron-containing silica layer on a surface of the substrate.
References Cited (Backward Citations)
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