Patent US6132552A successfully refreshed from Google Patents.
US6132552A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method and apparatus for controlling the temperature of a gas distribution plate in a process reactor
Assignee: Micron Technology Inc
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Filing: 1998-02-19
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Granted: 2000-10-17
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Expires: 2018-02-19
Abstract
Abstract A plasma process reactor is disclosed that allows for greater control in varying the functional temperature range for enhancing semiconductor processing and reactor cleaning. The temperature is controlled by splitting the process gas flow from a single gas manifold that injects the process gas behind the gas distribution plate into two streams where the first stream goes behind the gas distribution plate and the second stream is injected directly into the chamber. By decreasing the fraction of flow that is injected behind the gas distribution plate, the temperature of the gas distribution plate can be increased. The increasing of the temperature of the gas distribution plate results in higher O2 plasma removal rates of deposited material from the gas distribution plate. Additionally, the higher plasma temperature aids other processes that only operate at elevated temperatures not possible in a fixed temperature reactor.
Inventors
- 👤 Kevin G. Donohoe
- 👤 Guy T. Blalock
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 09:15
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/44; C23C16/455; C23C16/45563; C23C16/45565; C23C16/4401; C23C16/4405; C23C16/45502; C23C16/45508; C23C16/4558; C23C16/50; C23C16/505; C23C16/507; H; H01; H01J; H01J37/00; H01J37/32; H01J37/32009; H01J37/32082; H01J37/321; H01J37/32431; H01J37/3244; H01J37/32458; H01J37/32522; H10; H10P; H10P72/00; H10P72/04; H10P72/0431; H10P72/0434
Claims Analysis
Total Claims: 46
Claim 1
Independent Claim
68 words
A plasma process reactor for use in fabricating semiconductor devices, comprising: a holding chamber; a first process gas inlet supplying a first gas flow which is controlled at a first pressure for maintaining a first temperature within said holding chamber; and a second process gas inlet supplying a second gas flow split from said first process gas inlet for variably adjusting said first pressure and said first temperature.
Claim 2
Dependent Claim
68 words
A plasma process reactor for use in fabricating semiconductor devices, comprising: a holding chamber; a first process gas inlet supplying a first gas flow which is controlled at a first pressure for maintaining a first temperature within said holding chamber; and a second process gas inlet supplying a second gas flow split from said first process gas inlet for variably adjusting said first pressure and said first temperature.
Claim 3
Dependent Claim
18 words
The plasma process reactor according to claim 1 further comprising a vacuum generator coupled to said holding chamber.
Claim 4
Dependent Claim
24 words
The plasma process reactor according to claim 1 further comprising an inductively coupled plasma generator to form a plasma of said first gas flow.
Claim 5
Dependent Claim
30 words
The plasma process reactor according to claim 1 further comprising a gas distribution plate mounted within said holding chamber to maintain and control said first pressure and said first temperature.
Claim 6
Dependent Claim
33 words
The plasma process reactor according to claim 1 further comprising a substrate holder mounted to an interior of said holding chamber to hold a semiconductor substrate during operation of said plasma process reactor.
Claim 7
Dependent Claim
27 words
The plasma process reactor according to claim 2 further comprising a control valve, coupled to said vacuum generator, to control an overall pressure within said holding chamber.
Claim 8
Dependent Claim
29 words
The plasma process reactor according to claim 5 further comprising a gas distribution ring connected to said second process gas inlet to distribute gas uniformly within said holding chamber.
Claim 9
Dependent Claim
27 words
The plasma process reactor according to claim 7 wherein said gas distribution ring is substantially coplanar with said substrate holder and positioned to encircle said substrate holder.
Claim 10
Dependent Claim
21 words
The plasma process reactor apparatus according to claim 5 wherein said substrate holder is further coupled to a voltage bias controller.
Claim 11
Dependent Claim
84 words
A plasma process reactor for use in fabricating semiconductor devices, comprising: a holding chamber; a gas distribution plate, positioned within said holding chamber; a first process gas inlet coupled to said gas distribution plate, supplying a first gas flow which is controlled at a first pressure for maintaining a first temperature at said gas distribution plate; and a second process gas inlet supplying a second gas flow split from said first process gas inlet for variably adjusting a second temperature within said holding chamber.
Claim 12
Dependent Claim
84 words
A plasma process reactor for use in fabricating semiconductor devices, comprising: a holding chamber; a gas distribution plate, positioned within said holding chamber; a first process gas inlet coupled to said gas distribution plate, supplying a first gas flow which is controlled at a first pressure for maintaining a first temperature at said gas distribution plate; and a second process gas inlet supplying a second gas flow split from said first process gas inlet for variably adjusting a second temperature within said holding chamber.
Claim 13
Dependent Claim
18 words
The plasma process reactor according to claim 10 further comprising a vacuum generator coupled to said holding chamber.
Claim 14
Dependent Claim
24 words
The plasma process reactor according to claim 10 further comprising an inductively coupled plasma generator to form a plasma of said first gas flow.
Claim 15
Dependent Claim
32 words
The plasma process reactor according to claim 10 further comprising a substrate holder mounted to an interior of said chamber to hold a semiconductor substrate during operation of said plasma process reactor.
Claim 16
Dependent Claim
27 words
The plasma process reactor according to claim 11 further comprising a control valve, coupled to said vacuum generator, to control an overall pressure within said holding chamber.
Claim 17
Dependent Claim
29 words
The plasma process reactor according to claim 13 further comprising a gas distribution ring connected to said second process gas inlet to distribute gas uniformly within said holding chamber.
Claim 18
Dependent Claim
27 words
The plasma process reactor according to claim 15 wherein said gas distribution ring is substantially coplanar with said substrate holder and positioned to encircle said substrate holder.
Claim 19
Dependent Claim
20 words
The plasma process reactor according to claim 13 wherein said substrate holder is further coupled to a voltage bias controller.
Claim 20
Dependent Claim
52 words
The plasma process reactor according to claim 10 wherein a gas is fed through either said first process gas inlet or said second process gas inlet, said gas selected from the group consisting essentially of: C 2 HF 5 , N 2 , CHF 3 , and CH 2 F 2 .
Claim 21
Dependent Claim
25 words
The plasma process reactor according to claim 10 wherein a gas is fed through said first process gas inlet at a pressure between 5-500 mTorr.
Claim 22
Dependent Claim
29 words
The plasma process reactor according to claim 13 wherein said gas is fed through said second process gas inlet, maintaining said pressure within said holding chamber between 5-500 mTorr.
Claim 23
Dependent Claim
24 words
The plasma process reactor according to claim 19 wherein said gas is at a pressure of between 30-500 mTorr behind said gas distribution plate.
Claim 24
Dependent Claim
22 words
The plasma process reactor according to claim 20 wherein a pressure of between 5-500 mTorr is maintained behind said gas distribution plate.
Claim 25
Dependent Claim
16 words
The plasma process reactor according to claim 10 wherein said second temperature ranges between 50°-250° C.
Claim 26
Dependent Claim
93 words
A plasma process reactor for use in fabricating semiconductor devices, comprising: a holding chamber; a gas distribution plate, positioned within said holding chamber; a first process gas inlet, coupled to said gas distribution plate, supplying a first gas flow which is controlled at a first pressure for maintaining a first temperature at said gas distribution plate; and a second process gas inlet supplying a second gas flow split from said first process gas inlet for variably adjusting a second temperature within said holding chamber at a gas flow rate of between 5-15 sccm.
Claim 27
Dependent Claim
93 words
A plasma process reactor for use in fabricating semiconductor devices, comprising: a holding chamber; a gas distribution plate, positioned within said holding chamber; a first process gas inlet, coupled to said gas distribution plate, supplying a first gas flow which is controlled at a first pressure for maintaining a first temperature at said gas distribution plate; and a second process gas inlet supplying a second gas flow split from said first process gas inlet for variably adjusting a second temperature within said holding chamber at a gas flow rate of between 5-15 sccm.
Claim 28
Dependent Claim
18 words
The plasma process reactor according to claim 24 further comprising a vacuum generator coupled to said holding chamber.
Claim 29
Dependent Claim
24 words
The plasma process reactor according to claim 24 further comprising an inductively coupled plasma generator to form a plasma of said first gas flow.
Claim 30
Dependent Claim
33 words
The plasma process reactor according to claim 24 further comprising a substrate holder mounted to an interior of said holding chamber to hold a semiconductor substrate during operation of said plasma process reactor.
Claim 31
Dependent Claim
27 words
The plasma process reactor according to claim 25 further comprising a control valve, coupled to said vacuum generator, to control an overall pressure within said holding chamber.
Claim 32
Dependent Claim
29 words
The plasma process reactor according to claim 24 further comprising a gas distribution ring connected to said second process gas inlet to distribute gas uniformly within said holding chamber.
Claim 33
Dependent Claim
27 words
The plasma process reactor according to claim 27 wherein said gas distribution ring is substantially coplanar with said substrate holder and positioned to encircle said substrate holder.
Claim 34
Dependent Claim
20 words
The plasma process reactor according to claim 27 wherein said substrate holder is further coupled to a voltage bias controller.
Claim 35
Dependent Claim
19 words
The plasma process reactor according to claim 24 wherein said pressure within said holding chamber ranges between 5-500 mTorr.
Claim 36
Dependent Claim
22 words
The plasma process reactor according to claim 27 wherein a second pressure between 30-40 Torr is maintained behind said gas distribution plate.
Claim 37
Dependent Claim
91 words
A plasma process reactor for use in fabricating semiconductor devices, comprising: a holding chamber; a gas distribution plate, positioned within said holding chamber; a first process gas inlet, coupled to said gas distribution plate, supplying a first gas flow which is controlled at a first pressure for maintaining a first temperature at said gas distribution plate; and a second process gas inlet supplying a second gas flow split from said first process gas inlet for variably adjusting a second temperature within said holding chamber, said second temperature ranging between 50°-250° C.
Claim 38
Dependent Claim
91 words
A plasma process reactor for use in fabricating semiconductor devices, comprising: a holding chamber; a gas distribution plate, positioned within said holding chamber; a first process gas inlet, coupled to said gas distribution plate, supplying a first gas flow which is controlled at a first pressure for maintaining a first temperature at said gas distribution plate; and a second process gas inlet supplying a second gas flow split from said first process gas inlet for variably adjusting a second temperature within said holding chamber, said second temperature ranging between 50°-250° C.
Claim 39
Dependent Claim
18 words
The plasma process reactor according to claim 34 further comprising a vacuum generator coupled to said holding chamber.
Claim 40
Dependent Claim
24 words
The plasma process reactor according to claim 34 further comprising an inductively coupled plasma generator to form a plasma of said first gas flow.
Claim 41
Dependent Claim
33 words
The plasma process reactor according to claim 34 further comprising a substrate holder mounted to an interior of said holding chamber to hold a semiconductor substrate during operation of said plasma process reactor.
Claim 42
Dependent Claim
27 words
The plasma process reactor according to claim 35 further comprising a control valve, coupled to said vacuum generator, to control an overall pressure within said holding chamber.
Claim 43
Dependent Claim
29 words
The plasma process reactor according to claim 34 further comprising a gas distribution ring connected to said second process gas inlet to distribute gas uniformly within said holding chamber.
Claim 44
Dependent Claim
27 words
The plasma process reactor according to claim 37 wherein said gas distribution ring is substantially coplanar with said substrate holder and positioned to encircle said substrate holder.
Claim 45
Dependent Claim
20 words
The plasma process reactor according to claim 37, wherein said substrate holder is further coupled to a voltage bias controller.
Claim 46
Dependent Claim
16 words
The plasma process reactor according to claim 34 wherein said first temperature ranges between 80°-110° C.
References Cited (Backward Citations)
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2003-10-17 | 2004-04-17 | 2004-10-17 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2007-10-17 | 2008-04-17 | 2008-10-17 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2011-10-17 | 2012-04-17 | 2012-10-17 | $7700.00 | Window Closed / Lapsed |