US5500076A
Expired / Lapsed
US
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Process for dynamic control of the concentration of one or more etchants in a plasma-enhanced etch process for formation of patterned layers of conductive material on integrated circuit structures
Assignee: LSI Corp
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Filing: 1994-09-16
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Granted: 1996-03-19
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Expires: 2014-09-16
Abstract
Abstract A process for dynamically adjusting the concentration of one or more reactants in a plasma assisted press, such as a plasma etch process or a plasma deposition process, is describe. The concentration of one or more reactants, as well as the concentration of a non-reactive gas, in a plasma enhance process for the formation of an integrated circuit structure is quantitatively monitored by actinometry to derive a ratio of such concentrations of reactant to non-reactant. The concentration of the reactant or reactants in the plasma processing chamber is then maintained in the chamber by adjusting the flow of such reactant or reactants into the chamber based on changes in such ratio based on such continuous quantitative monitoring of the both the concentration of the reactant or reactants and that of the non-reactive (non-changing concentration) component.
Inventors
- 👤 Chris Jerbic
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 12:21
CPC Classifications
H; H01; H01J; H01J37/00; H01J37/32; H01J37/32917; H01J37/32935; G; G01; G01N; G01N21/00; G01N21/62; H01J37/32972; H01J37/3299
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
295 words
In a plasma etch process for etching various patterns of conductive material selected from the group consisting of metal and polysilicon on integrated circuit structures on a semiconductor substrate in a plasma etching chamber, wherein the amount of said conductive material to be removed will vary from substrate to substrate, depending upon the particular pattern of conductive material to be etched, resulting in the need for a change in flow rate of etchant gas into said etching chamber from substrate to substrate, to thereby control the concentration of said etchant gas in said etching chamber, the improvement which comprises: a) loading into a plasma etch chamber a semiconductor substrate having an integrated circuit structure formed thereon including a layer of said conductive material having a mask thereon to define a desired pattern of said conductive material on said structure; b) flowing into said plasma etch chamber a mixture of an etchant gas capable of plasma etching said conductive material and a non-reactive gas; c) igniting a plasma in said chamber to plasma etch said masked layer of conductive material; d) monitoring the respective optical emissions of said non-reactive gas and said conductive material etchant gas during said etch to determine the mount of said conductive material etchant gas being consumed by said conductive material; and e) changing the flow of said conductive material etchant gas into said plasma etch chamber to match the amount of said conductive material etchant gas being consumed by the portions of said conductive material exposed by said mask; whereby the concentration of said conductive material etchant gas in said chamber will remain constant during said etch regardless of the amount of conductive material being etched to provide the particular pattern of conductive material desired for the particular integrated circuit structure.
Claim 2
Dependent Claim
295 words
In a plasma etch process for etching various patterns of conductive material selected from the group consisting of metal and polysilicon on integrated circuit structures on a semiconductor substrate in a plasma etching chamber, wherein the amount of said conductive material to be removed will vary from substrate to substrate, depending upon the particular pattern of conductive material to be etched, resulting in the need for a change in flow rate of etchant gas into said etching chamber from substrate to substrate, to thereby control the concentration of said etchant gas in said etching chamber, the improvement which comprises: a) loading into a plasma etch chamber a semiconductor substrate having an integrated circuit structure formed thereon including a layer of said conductive material having a mask thereon to define a desired pattern of said conductive material on said structure; b) flowing into said plasma etch chamber a mixture of an etchant gas capable of plasma etching said conductive material and a non-reactive gas; c) igniting a plasma in said chamber to plasma etch said masked layer of conductive material; d) monitoring the respective optical emissions of said non-reactive gas and said conductive material etchant gas during said etch to determine the mount of said conductive material etchant gas being consumed by said conductive material; and e) changing the flow of said conductive material etchant gas into said plasma etch chamber to match the amount of said conductive material etchant gas being consumed by the portions of said conductive material exposed by said mask; whereby the concentration of said conductive material etchant gas in said chamber will remain constant during said etch regardless of the amount of conductive material being etched to provide the particular pattern of conductive material desired for the particular integrated circuit structure.
Claim 3
Dependent Claim
11 words
The process of claim 1 wherein said conductive material is polysilicon.
Claim 4
Dependent Claim
12 words
The process of claim 1 wherein said conductive material is a metal.
Claim 5
Dependent Claim
19 words
The process of claim 1 wherein said non-reactive gas is selected from the group consisting of argon and helium.
Claim 6
Dependent Claim
16 words
The process of claim 1 wherein said conductive material etchant gas is a chlorine etching gas.
Claim 7
Dependent Claim
269 words
In a plasma etch process for etching various patterns of polysilicon on integrated circuit structures on semiconductor substrates in a plasma etching chamber, wherein the amount of said polysilicon to be removed will vary from substrate to substrate, depending upon the particular pattern of polysilicon to be etched, resulting in the need for a change in flow rate of etchant gas into said etching chamber from substrate to substrate, to thereby control the concentration of said etchant gas in said etching chamber, the improvement which comprises: a) loading into a plasma etch chamber a semiconductor substrate having an integrated circuit structure formed thereon including a layer of said polysilicon having a mask thereon to define a desired pattern of said polysilicon on said structure; b) flowing into said plasma etch chamber a mixture of an etchant gas capable of plasma etching said polysilicon and a non-reactive gas; c) igniting a plasma in said chamber to plasma etch said masked layer of polysilicon; d) monitoring the respective optical emissions of said non-reactive gas and said polysilicon etchant gas during said etch to determine the amount of said polysilicon etchant gas being consumed by said polysilicon; and e) changing the flow of said polysilicon etchant gas into said plasma etch chamber to match the amount of said polysilicon etchant gas being consumed by the portions of said polysilicon exposed by said mask; whereby the concentration of said polysilicon etchant gas in said chamber will remain constant during said etch regardless of the mount of polysilicon being etched to provide the particular pattern of polysilicon desired for the particular integrated circuit structure.
Claim 8
Dependent Claim
269 words
In a plasma etch process for etching various patterns of polysilicon on integrated circuit structures on semiconductor substrates in a plasma etching chamber, wherein the amount of said polysilicon to be removed will vary from substrate to substrate, depending upon the particular pattern of polysilicon to be etched, resulting in the need for a change in flow rate of etchant gas into said etching chamber from substrate to substrate, to thereby control the concentration of said etchant gas in said etching chamber, the improvement which comprises: a) loading into a plasma etch chamber a semiconductor substrate having an integrated circuit structure formed thereon including a layer of said polysilicon having a mask thereon to define a desired pattern of said polysilicon on said structure; b) flowing into said plasma etch chamber a mixture of an etchant gas capable of plasma etching said polysilicon and a non-reactive gas; c) igniting a plasma in said chamber to plasma etch said masked layer of polysilicon; d) monitoring the respective optical emissions of said non-reactive gas and said polysilicon etchant gas during said etch to determine the amount of said polysilicon etchant gas being consumed by said polysilicon; and e) changing the flow of said polysilicon etchant gas into said plasma etch chamber to match the amount of said polysilicon etchant gas being consumed by the portions of said polysilicon exposed by said mask; whereby the concentration of said polysilicon etchant gas in said chamber will remain constant during said etch regardless of the mount of polysilicon being etched to provide the particular pattern of polysilicon desired for the particular integrated circuit structure.
Claim 9
Dependent Claim
19 words
The process of claim 6 wherein said non-reactive gas is selected from the group consisting of argon and helium.
Claim 10
Dependent Claim
267 words
In a plasma etch process for etching various patterns of metal on integrated circuit structures on semiconductor substrates in a plasma etching chamber, wherein the amount of said metal to be removed will vary from substrate to substrate, depending upon the particular pattern of metal to be etched, resulting in the need for a change in flow rate of etchant gas into said etching chamber from substrate to substrate, to thereby control the concentration of said etchant gas in said etching chamber, the improvement which comprises: a) loading into a plasma etch chamber a semiconductor substrate having an integrated circuit structure formed thereon including a metal layer having a mask thereon to define a desired pattern of said metal on said structure; b) flowing into said plasma etch chamber a mixture of an etchant gas capable of plasma etching said metal and a non-reactive gas; c) igniting a plasma in said chamber to plasma etch said masked layer of metal: d) monitoring the respective optical emissions of said non-reactive gas and said metal etchant gas during said etch to determine the amount of said metal etchant gas being consumed by said metal; and e) changing the flow of said metal etchant gas into said plasma etch chamber to match the amount of said metal etchant gas being consumed by the portions of said metal exposed by said mask; whereby the concentration of said metal etchant gas in said chamber will remain constant during said etch regardless of the amount of said metal being etched to provide the particular metal pattern desired for the particular integrated circuit structure.
Claim 11
Dependent Claim
267 words
In a plasma etch process for etching various patterns of metal on integrated circuit structures on semiconductor substrates in a plasma etching chamber, wherein the amount of said metal to be removed will vary from substrate to substrate, depending upon the particular pattern of metal to be etched, resulting in the need for a change in flow rate of etchant gas into said etching chamber from substrate to substrate, to thereby control the concentration of said etchant gas in said etching chamber, the improvement which comprises: a) loading into a plasma etch chamber a semiconductor substrate having an integrated circuit structure formed thereon including a metal layer having a mask thereon to define a desired pattern of said metal on said structure; b) flowing into said plasma etch chamber a mixture of an etchant gas capable of plasma etching said metal and a non-reactive gas; c) igniting a plasma in said chamber to plasma etch said masked layer of metal: d) monitoring the respective optical emissions of said non-reactive gas and said metal etchant gas during said etch to determine the amount of said metal etchant gas being consumed by said metal; and e) changing the flow of said metal etchant gas into said plasma etch chamber to match the amount of said metal etchant gas being consumed by the portions of said metal exposed by said mask; whereby the concentration of said metal etchant gas in said chamber will remain constant during said etch regardless of the amount of said metal being etched to provide the particular metal pattern desired for the particular integrated circuit structure.
Claim 12
Dependent Claim
19 words
The process of claim 8 wherein said non-reactive gas is selected from the group consisting of argon and helium.
Claim 13
Dependent Claim
180 words
A process for etching various patterns of conductive material selected from the group consisting of metal and polysilicon on integrated circuit structures on semiconductor substrates by controlling the concentration of one or more etchant components in a plasma etch processing chamber which comprises: a) quantitatively monitoring the optical emission of said one or more etch components in said chamber; b) quantitatively monitoring the optical emission of a non-reactive gas in said chamber; c) determining the respective ratio of the concentration of said non-reactive gas to the concentration of each of said one or more etch components; d) monitoring the change in said ratio; and e) changing the respective flows of said one or more etch components into said chamber in response to a change in the respective ratio of that etch component with said non-reactive gas; whereby the concentration of said one or more etch components in said chamber will remain constant during said etch regardless of the amount of said conductive material being etched to provide the particular pattern of conductive material desired for the particular integrated circuit structure.
Claim 14
Dependent Claim
180 words
A process for etching various patterns of conductive material selected from the group consisting of metal and polysilicon on integrated circuit structures on semiconductor substrates by controlling the concentration of one or more etchant components in a plasma etch processing chamber which comprises: a) quantitatively monitoring the optical emission of said one or more etch components in said chamber; b) quantitatively monitoring the optical emission of a non-reactive gas in said chamber; c) determining the respective ratio of the concentration of said non-reactive gas to the concentration of each of said one or more etch components; d) monitoring the change in said ratio; and e) changing the respective flows of said one or more etch components into said chamber in response to a change in the respective ratio of that etch component with said non-reactive gas; whereby the concentration of said one or more etch components in said chamber will remain constant during said etch regardless of the amount of said conductive material being etched to provide the particular pattern of conductive material desired for the particular integrated circuit structure.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1999-03-19 | 1999-09-18 | 2000-03-19 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2003-03-19 | 2003-09-18 | 2004-03-19 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2007-03-19 | 2007-09-18 | 2008-03-19 | $7700.00 | Window Closed / Lapsed |