Patent US6132514A successfully refreshed from Google Patents.
US6132514A
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US
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Catalytic breakdown of reactant gases in chemical vapor deposition
Assignee: Micron Technology Inc
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Filing: 1999-05-04
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Granted: 2000-10-17
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Expires: 2019-05-04
Abstract
Abstract Methods and apparatus for depositing films on semiconductor wafers in chemical vapor deposition processes employing a catalyst to provide one or more activated gases to reduce the surface temperature of the semiconductor wafer needed to form the film thereon. The activated gas precursors can include hydrogen or hydrogen-bearing gases. The catalysts can be selected from ruthenium, rhodium, palladium, osmium, iridium, platinum, gold, silver, mercury, rhenium, copper, tungsten, and combinations thereof.
Inventors
- 👤 Anand Srinivasan
- 👤 Gurtej S. Sandhu
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 02:15
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/44; C23C16/448; C23C16/452; H; H10; H10P; H10P14/00; H10P14/20; H10P14/24; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411
Claims Analysis
Total Claims: 43
Claim 1
Independent Claim
119 words
An apparatus for depositing films on semiconductor wafers using chemical vapor deposition, the apparatus comprising: a) a reaction chamber; b) a first gas source in fluid communication with the reaction chamber through a first line; c) a source of activated gas precursor in fluid communication with the reaction chamber through a second line; and d) catalytic material structure located along the second line between the source of activated gas precursor and the reaction chamber, the catalytic material structure being in contact with the activated gas precursor as it moves from the activated gas precursor source to the reaction chamber, wherein the second line is separate from the first line such that the first gas does not contact the catalyst.
Claim 2
Independent Claim
119 words
An apparatus for depositing films on semiconductor wafers using chemical vapor deposition, the apparatus comprising: a) a reaction chamber; b) a first gas source in fluid communication with the reaction chamber through a first line; c) a source of activated gas precursor in fluid communication with the reaction chamber through a second line; and d) catalytic material structure located along the second line between the source of activated gas precursor and the reaction chamber, the catalytic material structure being in contact with the activated gas precursor as it moves from the activated gas precursor source to the reaction chamber, wherein the second line is separate from the first line such that the first gas does not contact the catalyst.
Claim 3
Dependent Claim
32 words
An apparatus according to claim 1, wherein the catalytic material structure is selected from the group of ruthenium, rhodium, palladium, osmium, iridium, platinum, gold, silver, mercury, rhenium, copper, tungsten, and combinations thereof.
Claim 4
Dependent Claim
12 words
An apparatus according to claim 1, further comprising a catalytic material heater.
Claim 5
Dependent Claim
24 words
An apparatus according to claim 1, wherein the reaction chamber contains a semiconductor wafer held at a temperature of about 600° C. or less.
Claim 6
Dependent Claim
24 words
An apparatus according to claim 1, wherein the reaction chamber contains a semiconductor wafer held at a temperature of about 450° C. or less.
Claim 7
Independent Claim
127 words
An apparatus for depositing films on semiconductor wafers using chemical vapor deposition, the apparatus comprising: a) a reaction chamber; b) a first gas source in fluid communication with the reaction chamber through a first line; c) a source of activated gas precursor in fluid communication with the reaction chamber through a second line, wherein the activated gas precursor source comprises hydrogen-bearing gas; and d) catalytic material structure located along the second line between the source of activated gas precursor and the reaction chamber, the catalytic material being in contact with the activated gas precursor as it moves from the activated gas precursor source to the reaction chamber, wherein the second line is separate from the first line such that the first gas does not contact the catalyst.
Claim 8
Independent Claim
127 words
An apparatus for depositing films on semiconductor wafers using chemical vapor deposition, the apparatus comprising: a) a reaction chamber; b) a first gas source in fluid communication with the reaction chamber through a first line; c) a source of activated gas precursor in fluid communication with the reaction chamber through a second line, wherein the activated gas precursor source comprises hydrogen-bearing gas; and d) catalytic material structure located along the second line between the source of activated gas precursor and the reaction chamber, the catalytic material being in contact with the activated gas precursor as it moves from the activated gas precursor source to the reaction chamber, wherein the second line is separate from the first line such that the first gas does not contact the catalyst.
Claim 9
Dependent Claim
15 words
An apparatus according to claim 6, wherein the activated gas precursor consists essentially of hydrogen.
Claim 10
Independent Claim
131 words
An apparatus for depositing a refractory metal film on semiconductor wafers using chemical vapor deposition, the apparatus comprising: a) a reaction chamber; b) a first gas source in fluid communication with the reaction chamber through a first line, wherein the first gas comprises a refractory metal compound; c) a source of activated gas precursor in fluid communication with the reaction chamber through a second line; and d) catalytic material structure located along the second line between the source of activated gas precursor and the reaction chamber, the catalytic material structure being in contact with the activated gas precursor as it moves from the activated gas precursor source to the reaction chamber, wherein the second line is separate from the first line such that the first gas does not contact the catalyst.
Claim 11
Independent Claim
131 words
An apparatus for depositing a refractory metal film on semiconductor wafers using chemical vapor deposition, the apparatus comprising: a) a reaction chamber; b) a first gas source in fluid communication with the reaction chamber through a first line, wherein the first gas comprises a refractory metal compound; c) a source of activated gas precursor in fluid communication with the reaction chamber through a second line; and d) catalytic material structure located along the second line between the source of activated gas precursor and the reaction chamber, the catalytic material structure being in contact with the activated gas precursor as it moves from the activated gas precursor source to the reaction chamber, wherein the second line is separate from the first line such that the first gas does not contact the catalyst.
Claim 12
Dependent Claim
14 words
An apparatus according to claim 8, wherein the first gas comprises TiCl 4 .
Claim 13
Dependent Claim
22 words
An apparatus according to claim 8, wherein the first gas comprises TiCl 4 and the activated gas precursor comprises a hydrogen-bearing gas.
Claim 14
Independent Claim
140 words
An apparatus for depositing a refractory metal film on semiconductor wafers using chemical vapor deposition, the apparatus comprising: a) a reaction chamber; b) a first gas source in fluid communication with the reaction chamber through a first line, wherein the first gas comprises a refractory metal compound; c) a source of activated gas precursor in fluid communication with the reaction chamber through a second line, wherein the activated gas precursor comprises a hydrogen-bearing gas; and d) catalytic material structure located along the second line between the source of activated gas precursor and the reaction chamber, the catalytic material structure being in contact with the activated gas precursor as it moves from the activated gas precursor source to the reaction chamber, wherein the second line is separate from the first line such that the first gas does not contact the catalyst.
Claim 15
Independent Claim
140 words
An apparatus for depositing a refractory metal film on semiconductor wafers using chemical vapor deposition, the apparatus comprising: a) a reaction chamber; b) a first gas source in fluid communication with the reaction chamber through a first line, wherein the first gas comprises a refractory metal compound; c) a source of activated gas precursor in fluid communication with the reaction chamber through a second line, wherein the activated gas precursor comprises a hydrogen-bearing gas; and d) catalytic material structure located along the second line between the source of activated gas precursor and the reaction chamber, the catalytic material structure being in contact with the activated gas precursor as it moves from the activated gas precursor source to the reaction chamber, wherein the second line is separate from the first line such that the first gas does not contact the catalyst.
Claim 16
Dependent Claim
32 words
An apparatus according to claim 11, wherein the catalytic material structure is selected from the group of ruthenium, rhodium, palladium, osmium, iridium, platinum, gold, silver, mercury, rhenium, copper, tungsten, and combinations thereof.
Claim 17
Dependent Claim
12 words
An apparatus according to claim 11, further comprising a catalytic material heater.
Claim 18
Dependent Claim
24 words
An apparatus according to claim 11, wherein the reaction chamber contains a semiconductor wafer held at a temperature of about 600° C. or less.
Claim 19
Dependent Claim
24 words
An apparatus according to claim 11, wherein the reaction chamber contains a semiconductor wafer held at a temperature of about 450° C. or less.
Claim 20
Dependent Claim
15 words
An apparatus according to claim 11, wherein the activated gas precursor consists essentially of hydrogen.
Claim 21
Dependent Claim
14 words
An apparatus according to claim 11, wherein the first gas comprises TiCl 4 .
Claim 22
Independent Claim
155 words
An apparatus for depositing films on semiconductor wafers using chemical vapor deposition, the apparatus comprising: a) a reaction chamber; b) a first gas source in fluid communication with the reaction chamber through a first line; c) a source of activated gas precursor in fluid communication with the reaction chamber through a second line; and d) catalytic material structure located along the second line between the source of activated gas precursor and the reaction chamber, the catalytic material structure being in contact with the activated gas precursor as it moves from the activated gas precursor source to the reaction chamber, wherein the second line is separate from the first line such that the first gas does not contact the catalyst, wherein the catalytic material and the activated gas precursor are selected such that the catalytic material adsorbs at least a portion of the activated gas precursor and desorbs at least a portion of the activated gas.
Claim 23
Independent Claim
155 words
An apparatus for depositing films on semiconductor wafers using chemical vapor deposition, the apparatus comprising: a) a reaction chamber; b) a first gas source in fluid communication with the reaction chamber through a first line; c) a source of activated gas precursor in fluid communication with the reaction chamber through a second line; and d) catalytic material structure located along the second line between the source of activated gas precursor and the reaction chamber, the catalytic material structure being in contact with the activated gas precursor as it moves from the activated gas precursor source to the reaction chamber, wherein the second line is separate from the first line such that the first gas does not contact the catalyst, wherein the catalytic material and the activated gas precursor are selected such that the catalytic material adsorbs at least a portion of the activated gas precursor and desorbs at least a portion of the activated gas.
Claim 24
Dependent Claim
32 words
An apparatus according to claim 18, wherein the catalytic material structure is selected from the group of ruthenium, rhodium, palladium, osmium, iridium, platinum, gold, silver, mercury, rhenium, copper, tungsten, and combinations thereof.
Claim 25
Dependent Claim
12 words
An apparatus according to claim 18, further comprising a catalytic material heater.
Claim 26
Dependent Claim
23 words
An apparatus according to claim 18, the reaction chamber contains a semiconductor wafer held at a temperature of about 600° C. or less.
Claim 27
Independent Claim
23 words
An apparatus according to claim wherein the reaction chamber contains a semiconductor wafer held at a temperature of about 450° C. or less.
Claim 28
Independent Claim
176 words
An apparatus for depositing a refractory metal film on semiconductor wafers using chemical vapor deposition, the apparatus comprising: a) a reaction chamber; b) a first gas source in fluid communication with the reaction chamber through a first line, wherein the first gas comprises a refractory metal compound; c) a source of activated gas precursor in fluid communication with the reaction chamber through a second line, wherein the activated gas precursor comprises a hydrogen-bearing gas; and d) catalytic material structure located along the second line between the source of activated gas precursor and the reaction chamber, the catalytic material structure being in contact with the activated gas precursor as it moves from the activated gas precursor source to the reaction chamber, wherein the second line is separate from the first line such that the first gas does not contact the catalyst, wherein the catalytic material and the activated gas precursor are selected such that the catalytic material adsorbs at least a portion of the activated gas precursor and desorbs at least a portion of the activated gas.
Claim 29
Independent Claim
176 words
An apparatus for depositing a refractory metal film on semiconductor wafers using chemical vapor deposition, the apparatus comprising: a) a reaction chamber; b) a first gas source in fluid communication with the reaction chamber through a first line, wherein the first gas comprises a refractory metal compound; c) a source of activated gas precursor in fluid communication with the reaction chamber through a second line, wherein the activated gas precursor comprises a hydrogen-bearing gas; and d) catalytic material structure located along the second line between the source of activated gas precursor and the reaction chamber, the catalytic material structure being in contact with the activated gas precursor as it moves from the activated gas precursor source to the reaction chamber, wherein the second line is separate from the first line such that the first gas does not contact the catalyst, wherein the catalytic material and the activated gas precursor are selected such that the catalytic material adsorbs at least a portion of the activated gas precursor and desorbs at least a portion of the activated gas.
Claim 30
Dependent Claim
32 words
An apparatus according to claim 23, wherein the catalytic material structure is selected from the group of ruthenium, rhodium, palladium, osmium, iridium, platinum, gold, silver, mercury, rhenium, copper, tungsten, and combinations thereof.
Claim 31
Dependent Claim
12 words
An apparatus according to claim 23, further comprising a catalytic material heater.
Claim 32
Dependent Claim
24 words
An apparatus according to claim 23, wherein the reaction chamber contains a semiconductor wafer held at a temperature of about 600° C. or less.
Claim 33
Dependent Claim
24 words
An apparatus according to claim 23, wherein the reaction chamber contains a semiconductor wafer held at a temperature of about 450° C. or less.
Claim 34
Dependent Claim
15 words
An apparatus according to claim 23, wherein the activated gas precursor consists essentially of hydrogen.
Claim 35
Dependent Claim
14 words
An apparatus according to claim 23, wherein the first gas comprises TiCl 4 .
Claim 36
Independent Claim
164 words
An apparatus for depositing films on semiconductor wafers using chemical vapor deposition, the apparatus comprising: a) a reaction chamber; b) a first gas source in fluid communication with the reaction chamber through a first line; c) a source of activated gas precursor in fluid communication with the reaction chamber through a second line, wherein the activated gas precursor source comprises hydrogen-bearing gas; and d) catalytic material structure located along the second line between the source of activated gas precursor and the reaction chamber, the catalytic material structure being in contact with the activated gas precursor as it moves from the activated gas precursor source to the reaction chamber, wherein the second line is separate from the first line such that the first gas does not contact the catalyst, wherein the catalytic material and the activated gas precursor are selected such that the catalytic material adsorbs at least a portion of the activated gas precursor and desorbs at least a portion of the activated gas.
Claim 37
Independent Claim
164 words
An apparatus for depositing films on semiconductor wafers using chemical vapor deposition, the apparatus comprising: a) a reaction chamber; b) a first gas source in fluid communication with the reaction chamber through a first line; c) a source of activated gas precursor in fluid communication with the reaction chamber through a second line, wherein the activated gas precursor source comprises hydrogen-bearing gas; and d) catalytic material structure located along the second line between the source of activated gas precursor and the reaction chamber, the catalytic material structure being in contact with the activated gas precursor as it moves from the activated gas precursor source to the reaction chamber, wherein the second line is separate from the first line such that the first gas does not contact the catalyst, wherein the catalytic material and the activated gas precursor are selected such that the catalytic material adsorbs at least a portion of the activated gas precursor and desorbs at least a portion of the activated gas.
Claim 38
Dependent Claim
15 words
An apparatus according to claim 30, wherein the activated gas precursor consists essentially of hydrogen.
Claim 39
Independent Claim
167 words
An apparatus for depositing a refractory metal film on semiconductor wafers using chemical vapor deposition, the apparatus comprising: a) a reaction chamber; b) a first gas source in fluid communication with the reaction chamber through a first line, wherein the first gas comprises a refractory metal compound; c) a source of activated gas precursor in fluid communication with the reaction chamber through a second line; and d) catalytic material structure located along the second line between the source of activated gas precursor and the reaction chamber, the catalytic material structure being in contact with the activated gas precursor as it moves from the activated gas precursor source to the reaction chamber, wherein the second line is separate from the first line such that the first gas does not contact the catalyst, wherein the catalytic material and the activated gas precursor are selected such that the catalytic material adsorbs at last a portion of the activated gas precursor and desorbs at least a portion of the activated gas.
Claim 40
Independent Claim
167 words
An apparatus for depositing a refractory metal film on semiconductor wafers using chemical vapor deposition, the apparatus comprising: a) a reaction chamber; b) a first gas source in fluid communication with the reaction chamber through a first line, wherein the first gas comprises a refractory metal compound; c) a source of activated gas precursor in fluid communication with the reaction chamber through a second line; and d) catalytic material structure located along the second line between the source of activated gas precursor and the reaction chamber, the catalytic material structure being in contact with the activated gas precursor as it moves from the activated gas precursor source to the reaction chamber, wherein the second line is separate from the first line such that the first gas does not contact the catalyst, wherein the catalytic material and the activated gas precursor are selected such that the catalytic material adsorbs at last a portion of the activated gas precursor and desorbs at least a portion of the activated gas.
Claim 41
Independent Claim
13 words
An apparatus according to wherein 33, the first gas comprises TiCl 4 .
Claim 42
Independent Claim
13 words
An apparatus according to wherein 33, the first gas comprises TiCl 4 .
Claim 43
Dependent Claim
22 words
An apparatus according to claim 33, wherein the first gas comprises TiCl 4 and the activated gas precursor comprises a hydrogen-bearing gas.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2003-10-17 | 2004-04-17 | 2004-10-17 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2007-10-17 | 2008-04-17 | 2008-10-17 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2011-10-17 | 2012-04-17 | 2012-10-17 | $7700.00 | Window Closed / Lapsed |