Patent US5923612A successfully refreshed from Google Patents.
Patent US6127192A successfully refreshed from Google Patents.
US6127192A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Complexes having tris (pyrazolyl) borate ligands for forming films
Assignee: Micron Technology Inc
•
Filing: 1998-08-27
•
Granted: 2000-10-03
•
Expires: 2018-08-27
Abstract
Abstract Methods of forming a film on a substrate using chemical vapor deposition techniques and pyrazolyl complexes. The complexes and methods are particularly suitable for the preparation of semiconductor structures.
Inventors
- 👤 Stefan Uhlenbrock
- 👤 Brian A. Vaartstra
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 02:49
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/66; H10P14/668; H10P14/69; H10P14/692; H10P14/6938; H10P14/69398; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334
Claims Analysis
Total Claims: 44
Claim 1
Independent Claim
104 words
A method of manufacturing a semiconductor structure comprising: providing a semiconductor substrate or substrate assembly; providing a precursor composition comprising two or more complexes comprising a Group IIA, IVB, VA, or VB metal and one or more anionic tris(pyrazolyl)borate ligands of the formula: ##STR3## wherein each R 1 , R 2 , R 3 , and R 4 group is independently H, an organic group, or a halide; and vaporizing the precursor composition and directing it toward the semiconductor substrate or substrate assembly using a chemical vapor deposition technique to form a metal-containing film on a surface of the semiconductor substrate or substrate assembly.
Claim 2
Independent Claim
104 words
A method of manufacturing a semiconductor structure comprising: providing a semiconductor substrate or substrate assembly; providing a precursor composition comprising two or more complexes comprising a Group IIA, IVB, VA, or VB metal and one or more anionic tris(pyrazolyl)borate ligands of the formula: ##STR3## wherein each R 1 , R 2 , R 3 , and R 4 group is independently H, an organic group, or a halide; and vaporizing the precursor composition and directing it toward the semiconductor substrate or substrate assembly using a chemical vapor deposition technique to form a metal-containing film on a surface of the semiconductor substrate or substrate assembly.
Claim 3
Dependent Claim
17 words
The method of claim 1 wherein the precursor is vaporized in the presence of a carrier gas.
Claim 4
Dependent Claim
17 words
The method of claim 2 wherein the precursor is vaporized in the presence of a reaction gas.
Claim 5
Dependent Claim
50 words
The method of claim 3 wherein: the carrier gas is selected from the group consisting of nitrogen, helium, argon, and mixtures thereof; and the reaction gas is selected from the group consisting of oxygen, ozone, nitrogen oxides, ammonia, hydrazine, water vapor, hydrogen sulfide, hydrogen selenide, hydrogen telluride, and mixtures thereof.
Claim 6
Dependent Claim
21 words
The method of claim 4 wherein the film is a film of an oxide, sulfide, nitride, selenide, telluride, or mixture thereof.
Claim 7
Dependent Claim
17 words
The method of claim 1 wherein the film is an oxide film and forms a dielectric layer.
Claim 8
Dependent Claim
19 words
The method of claim 1 wherein the precursor composition comprises a solid metal complex dissolved in an organic solvent.
Claim 9
Dependent Claim
20 words
The method of claim 7 wherein the chemical vapor deposition technique comprises flash vaporization, bubbling, microdroplet formation, or combinations thereof.
Claim 10
Dependent Claim
20 words
The method of claim 1 wherein the metal is selected from the group of Ba, Sr, Ti, and mixtures thereof.
Claim 11
Dependent Claim
65 words
The method of claim 1 wherein the complexes are selected from the group of ML 2 , M(O)L 2 , M(OR 5 ) x L 4-x , and M(OR 5 ) y L 5-y ; wherein L is the anionic tris(pyrazolyl)borate ligand, M is a Group IIA, IVB, VA, or VB metal, R 5 is an organic group, x=2 to 4, and y=2 to 5.
Claim 12
Dependent Claim
24 words
The method of claim 1 wherein the precursor composition further comprises one or more metal complexes that do not contain the anionic tris(pyrazolyl)borate ligand.
Claim 13
Dependent Claim
31 words
The method of claim 1 wherein each R 1 , R 2 , R 3 , and R 4 group is independently H or a (C 1 -C 30 )organic group.
Claim 14
Dependent Claim
31 words
The method of claim 1 wherein each R 1 , R 2 , R 3 , and R 4 group is independently H or a (C 1 -C 8 )organic group.
Claim 15
Dependent Claim
21 words
The method of claim 1 wherein R 1 and R 3 are methyl, and R 2 and R 4 are hydrogen.
Claim 16
Dependent Claim
15 words
The method of claim 1 wherein each of R 1 to R 4 is hydrogen.
Claim 17
Independent Claim
146 words
A method of manufacturing a semiconductor structure comprising: providing a semiconductor substrate or substrate assembly; providing a precursor composition comprising two or more complexes selected from the group of ML 2 , M(O)L 2 , M(OR 5 ) x L 4-x , and M(OR 5 ) y L 5-y ; wherein: M is a Group IIA, IVB, VA, or VB metal; each R 5 group is independently an organic group; x=2 to 4; y=2 to 5; L is an anionic ligand of the following formula: ##STR4## wherein each R 1 , R 2 , R 3 , and R 4 group is independently H, an organic group, or a halide; and vaporizing the precursor composition and directing it toward the semiconductor substrate or substrate assembly using a chemical vapor deposition technique to form a metal-containing film on a surface of the semiconductor substrate or substrate assembly.
Claim 18
Independent Claim
146 words
A method of manufacturing a semiconductor structure comprising: providing a semiconductor substrate or substrate assembly; providing a precursor composition comprising two or more complexes selected from the group of ML 2 , M(O)L 2 , M(OR 5 ) x L 4-x , and M(OR 5 ) y L 5-y ; wherein: M is a Group IIA, IVB, VA, or VB metal; each R 5 group is independently an organic group; x=2 to 4; y=2 to 5; L is an anionic ligand of the following formula: ##STR4## wherein each R 1 , R 2 , R 3 , and R 4 group is independently H, an organic group, or a halide; and vaporizing the precursor composition and directing it toward the semiconductor substrate or substrate assembly using a chemical vapor deposition technique to form a metal-containing film on a surface of the semiconductor substrate or substrate assembly.
Claim 19
Independent Claim
128 words
A method of manufacturing a semiconductor structure comprising: providing a semiconductor substrate or substrate assembly; providing a precursor composition comprising one or more complexes comprising a Group IIA, IVB, VA, or VB metal, with the proviso that at least one of the complexes includes a metal selected from the group of Zr, Hf, V, Nb, and Ta, and one or more anionic tris(pyrazolyl)borate ligands of the formula: ##STR5## wherein each R 1 , R 2 , R 3 , and R 4 group is independently H, an organic group, or a halide; and vaporizing the precursor composition and directing it toward the semiconductor substrate or substrate assembly using a chemical vapor deposition technique to form a metal-containing film on a surface of the semiconductor substrate or substrate assembly.
Claim 20
Independent Claim
128 words
A method of manufacturing a semiconductor structure comprising: providing a semiconductor substrate or substrate assembly; providing a precursor composition comprising one or more complexes comprising a Group IIA, IVB, VA, or VB metal, with the proviso that at least one of the complexes includes a metal selected from the group of Zr, Hf, V, Nb, and Ta, and one or more anionic tris(pyrazolyl)borate ligands of the formula: ##STR5## wherein each R 1 , R 2 , R 3 , and R 4 group is independently H, an organic group, or a halide; and vaporizing the precursor composition and directing it toward the semiconductor substrate or substrate assembly using a chemical vapor deposition technique to form a metal-containing film on a surface of the semiconductor substrate or substrate assembly.
Claim 21
Independent Claim
111 words
A method of manufacturing a memory device structure comprising: providing a substrate having a first electrode thereon; providing a precursor composition comprising two or more complexes comprising a Group IIA, IVB, VA, or VB metal and one or more anionic tris(pyrazolyl)borate ligands of the formula: ##STR6## wherein each R 1 , R 2 , R 3 , and R 4 group is independently H, an organic group, or a halide; vaporizing the precursor composition and directing it toward the substrate using a chemical vapor deposition technique to form a dielectric layer comprising an oxide film on the first electrode of the substrate; and forming a second electrode on the dielectric layer.
Claim 22
Independent Claim
111 words
A method of manufacturing a memory device structure comprising: providing a substrate having a first electrode thereon; providing a precursor composition comprising two or more complexes comprising a Group IIA, IVB, VA, or VB metal and one or more anionic tris(pyrazolyl)borate ligands of the formula: ##STR6## wherein each R 1 , R 2 , R 3 , and R 4 group is independently H, an organic group, or a halide; vaporizing the precursor composition and directing it toward the substrate using a chemical vapor deposition technique to form a dielectric layer comprising an oxide film on the first electrode of the substrate; and forming a second electrode on the dielectric layer.
Claim 23
Dependent Claim
12 words
The method of claim 18 wherein the substrate is a silicon wafer.
Claim 24
Dependent Claim
13 words
The method of claim 18 wherein the oxide film forms a ferroelectric layer.
Claim 25
Independent Claim
151 words
A method of manufacturing a memory device structure comprising: providing a substrate having a first electrode thereon; providing a precursor composition comprising two or more complexes selected from the group of ML 2 , M(O)L 2 , M(OR 5 ) x L 4-x , and M(OR 5 ) y L 5-y ; wherein: M is a Group IIA, IVB, VA, or VB metal; each R 5 group is independently an organic group; x=2 to 4; y=2to5; L is an anionic ligand of the following formula: ##STR7## wherein each R 1 , R 2 , R 3 , and R 4 group is independently H, an organic group, or a halide; vaporizing the precursor composition and directing it toward the substrate using a chemical vapor deposition technique to form a dielectric layer comprising an oxide film on the first electrode of the substrate; and forming a second electrode on the dielectric layer.
Claim 26
Independent Claim
151 words
A method of manufacturing a memory device structure comprising: providing a substrate having a first electrode thereon; providing a precursor composition comprising two or more complexes selected from the group of ML 2 , M(O)L 2 , M(OR 5 ) x L 4-x , and M(OR 5 ) y L 5-y ; wherein: M is a Group IIA, IVB, VA, or VB metal; each R 5 group is independently an organic group; x=2 to 4; y=2to5; L is an anionic ligand of the following formula: ##STR7## wherein each R 1 , R 2 , R 3 , and R 4 group is independently H, an organic group, or a halide; vaporizing the precursor composition and directing it toward the substrate using a chemical vapor deposition technique to form a dielectric layer comprising an oxide film on the first electrode of the substrate; and forming a second electrode on the dielectric layer.
Claim 27
Independent Claim
135 words
A method of manufacturing a memory device structure comprising: providing a substrate having a first electrode thereon; providing a precursor composition comprising one or more complexes comprising a Group IIA, IVB, VA, or VB metal, with the proviso that at least one of the complexes includes a metal selected from the group of Zr, Hf, V, Nb, and Ta, and one or more anionic tris(pyrazolyl)borate ligands of the formula: ##STR8## wherein each R 1 , R 2 , R 3 , and R 4 group is independently H, an organic group, or a halide; vaporizing the precursor composition and directing it toward the substrate using a chemical vapor deposition technique to form a dielectric layer comprising an oxide film on the first electrode of the substrate; and forming a second electrode on the dielectric layer.
Claim 28
Independent Claim
135 words
A method of manufacturing a memory device structure comprising: providing a substrate having a first electrode thereon; providing a precursor composition comprising one or more complexes comprising a Group IIA, IVB, VA, or VB metal, with the proviso that at least one of the complexes includes a metal selected from the group of Zr, Hf, V, Nb, and Ta, and one or more anionic tris(pyrazolyl)borate ligands of the formula: ##STR8## wherein each R 1 , R 2 , R 3 , and R 4 group is independently H, an organic group, or a halide; vaporizing the precursor composition and directing it toward the substrate using a chemical vapor deposition technique to form a dielectric layer comprising an oxide film on the first electrode of the substrate; and forming a second electrode on the dielectric layer.
Claim 29
Independent Claim
91 words
A method of forming a film on a substrate comprising: providing a substrate; providing a precursor composition comprising two or more complexes comprising a Group IIA, IVB, VA, or VB metal and one or more anionic tris(pyrazolyl)borate ligands of the formula: ##STR9## wherein each R 1 , R 2 , R 3 , and R 4 group is independently H, an organic group, or a halide; and vaporizing the precursor composition and directing it toward the substrate using a chemical vapor deposition technique to form a metal-containing film on the substrate.
Claim 30
Independent Claim
91 words
A method of forming a film on a substrate comprising: providing a substrate; providing a precursor composition comprising two or more complexes comprising a Group IIA, IVB, VA, or VB metal and one or more anionic tris(pyrazolyl)borate ligands of the formula: ##STR9## wherein each R 1 , R 2 , R 3 , and R 4 group is independently H, an organic group, or a halide; and vaporizing the precursor composition and directing it toward the substrate using a chemical vapor deposition technique to form a metal-containing film on the substrate.
Claim 31
Dependent Claim
21 words
The method of claim 23 wherein the film is a film of an oxide, sulfide, nitride, selenide, telluride, or mixture thereof.
Claim 32
Dependent Claim
12 words
The method of claim 24 wherein the film is an oxide film.
Claim 33
Dependent Claim
18 words
The method of claim 25 wherein the oxide film forms a ferroelectric layer in a ferroelectric memory device.
Claim 34
Dependent Claim
12 words
The method of claim 26 wherein the substrate comprises a silicon substrate.
Claim 35
Independent Claim
133 words
A method of forming a film on a substrate comprising: providing a substrate; providing a precursor composition comprising two or more complexes selected from the group of ML 2 , M(O)L 2 , M(OR 5 ) x L 4-x , and M(OR 5 ) y L 5-y ; wherein: M is a Group IIA, IVB, VA, or VB metal; each R 5 group is independently an organic group; x=2 to 4; y=2 to 5; L is an anionic ligand of the following formula: ##STR10## wherein each R 1 , R 2 , R 3 , and R 4 group is independently H, an organic group, or a halide; and vaporizing the precursor composition and directing it toward the substrate using a chemical vapor deposition technique to form a metal-containing film on the substrate.
Claim 36
Independent Claim
133 words
A method of forming a film on a substrate comprising: providing a substrate; providing a precursor composition comprising two or more complexes selected from the group of ML 2 , M(O)L 2 , M(OR 5 ) x L 4-x , and M(OR 5 ) y L 5-y ; wherein: M is a Group IIA, IVB, VA, or VB metal; each R 5 group is independently an organic group; x=2 to 4; y=2 to 5; L is an anionic ligand of the following formula: ##STR10## wherein each R 1 , R 2 , R 3 , and R 4 group is independently H, an organic group, or a halide; and vaporizing the precursor composition and directing it toward the substrate using a chemical vapor deposition technique to form a metal-containing film on the substrate.
Claim 37
Independent Claim
113 words
A method of forming a film on a substrate comprising: providing a substrate; providing a precursor composition comprising one or more complexes comprising a Group IIA, IVB, VA, or VB metal, with the proviso that at least one complex includes a metal selected from the group of Zr, Hf, V, Nb, and Ta, and one or more anionic tris(pyrazolyl)borate ligands of the formula: ##STR11## wherein each R 1 , R 2 , R 3 , and R 4 group is independently H, an organic group, or a halide; and vaporizing the precursor composition and directing it toward the substrate using a chemical vapor deposition technique to form a metal-containing film on the substrate.
Claim 38
Independent Claim
113 words
A method of forming a film on a substrate comprising: providing a substrate; providing a precursor composition comprising one or more complexes comprising a Group IIA, IVB, VA, or VB metal, with the proviso that at least one complex includes a metal selected from the group of Zr, Hf, V, Nb, and Ta, and one or more anionic tris(pyrazolyl)borate ligands of the formula: ##STR11## wherein each R 1 , R 2 , R 3 , and R 4 group is independently H, an organic group, or a halide; and vaporizing the precursor composition and directing it toward the substrate using a chemical vapor deposition technique to form a metal-containing film on the substrate.
Claim 39
Independent Claim
94 words
A method of forming a film on a substrate comprising: providing a substrate; providing a liquid precursor composition comprising two or more complexes comprising a Group IIA, IVB, VA, or VB metal and two or more anionic tris(pyrazolyl)borate ligands of the formula: ##STR12## wherein each R 1 , R 2 , R 3 , and R 4 group is independently H, an organic group, or a halide; vaporizing the liquid precursor composition to form vaporized precursor composition; and directing the vaporized precursor composition toward the substrate to form a metal-containing film on the substrate.
Claim 40
Independent Claim
94 words
A method of forming a film on a substrate comprising: providing a substrate; providing a liquid precursor composition comprising two or more complexes comprising a Group IIA, IVB, VA, or VB metal and two or more anionic tris(pyrazolyl)borate ligands of the formula: ##STR12## wherein each R 1 , R 2 , R 3 , and R 4 group is independently H, an organic group, or a halide; vaporizing the liquid precursor composition to form vaporized precursor composition; and directing the vaporized precursor composition toward the substrate to form a metal-containing film on the substrate.
Claim 41
Independent Claim
137 words
A method of forming a film on a substrate comprising: providing a substrate; providing a liquid precursor composition comprising two or more complexes selected from the group of ML 2 , M(O)L 2 , M(OR 5 ) x L 4-x , and M(OR 5 ) y L 5-y ; wherein: M is a Group IIA, IVB, VA, or VB metal; each R 5 group is independently an organic group; x=2 to 4; y=2 to 5; L is an anionic ligand of the following formula: ##STR13## wherein each R 1 , R 3 , R 3 , and R 4 group is independently H, an organic group, or a halide; and vaporizing the liquid precursor composition to form vaporized precursor composition; and directing the vaporized precursor composition toward the substrate to form a metal-containing film on the substrate.
Claim 42
Independent Claim
137 words
A method of forming a film on a substrate comprising: providing a substrate; providing a liquid precursor composition comprising two or more complexes selected from the group of ML 2 , M(O)L 2 , M(OR 5 ) x L 4-x , and M(OR 5 ) y L 5-y ; wherein: M is a Group IIA, IVB, VA, or VB metal; each R 5 group is independently an organic group; x=2 to 4; y=2 to 5; L is an anionic ligand of the following formula: ##STR13## wherein each R 1 , R 3 , R 3 , and R 4 group is independently H, an organic group, or a halide; and vaporizing the liquid precursor composition to form vaporized precursor composition; and directing the vaporized precursor composition toward the substrate to form a metal-containing film on the substrate.
Claim 43
Independent Claim
119 words
A method of forming a film on a substrate comprising: providing a substrate; providing a liquid precursor composition comprising one or more complexes comprising a Group IIA, IVB, VA, or VB metal, with the proviso that at least one of the complexes includes a metal selected from the group of Zr, Hf, V, Nb, and Ta, and two or more anionic tris(pyrazolyl)borate ligands of the formula: ##STR14## wherein each R 1 , R 2 , R 3 , and R 4 group is independently H, an organic group, or a halide; and vaporizing the liquid precursor composition to form vaporized precursor composition; and directing the vaporized precursor composition toward the substrate to form a metal-containing film on the substrate.
Claim 44
Independent Claim
119 words
A method of forming a film on a substrate comprising: providing a substrate; providing a liquid precursor composition comprising one or more complexes comprising a Group IIA, IVB, VA, or VB metal, with the proviso that at least one of the complexes includes a metal selected from the group of Zr, Hf, V, Nb, and Ta, and two or more anionic tris(pyrazolyl)borate ligands of the formula: ##STR14## wherein each R 1 , R 2 , R 3 , and R 4 group is independently H, an organic group, or a halide; and vaporizing the liquid precursor composition to form vaporized precursor composition; and directing the vaporized precursor composition toward the substrate to form a metal-containing film on the substrate.
References Cited (Backward Citations)
US5255258A
Cited
US5453494A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2003-10-03 | 2004-04-03 | 2004-10-03 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2007-10-03 | 2008-04-03 | 2008-10-03 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2011-10-03 | 2012-04-03 | 2012-10-03 | $7700.00 | Window Closed / Lapsed |