Patent US6124626A successfully refreshed from Google Patents.
US6124626A
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Capacitor structures formed using excess oxygen containing material provided relative to electrodes thereof
Assignee: Micron Technology Inc
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Filing: 1999-08-25
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Granted: 2000-09-26
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Expires: 2019-08-25
Abstract
Abstract Formation of a capacitor includes providing a capacitor structure by forming a first electrode on a portion of a substrate assembly, forming a high dielectric material over at least a portion of the first electrode, and forming a second electrode over the high dielectric material. An additional layer may be formed over at least a portion of the second electrode. The portion of the substrate assembly on which the first electrode is formed and/or the layer formed over the second electrode are formed of an excess oxygen containing material.
Inventors
- 👤 Gurtej S. Sandhu
- 👤 Garo Derderian
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 03:30
CPC Classifications
H; H10; H10D; H10D1/00; H10D1/60; H10D1/68; H10D1/692; H10D1/694; H10D1/696; H10B; H10B12/00; H10B12/01; H10B12/02; H10B12/03
Claims Analysis
Total Claims: 22
Claim 1
Independent Claim
66 words
A capacitor structure, comprising: a first electrode formed on at least a portion of a substrate assembly; a dielectric material on at least a portion of the first electrode; a second electrode on the dielectric material; and a layer formed over at least a portion of the second electrode, wherein at least the portion of the substrate assembly is formed of an excess oxygen containing material.
Claim 2
Dependent Claim
66 words
A capacitor structure, comprising: a first electrode formed on at least a portion of a substrate assembly; a dielectric material on at least a portion of the first electrode; a second electrode on the dielectric material; and a layer formed over at least a portion of the second electrode, wherein at least the portion of the substrate assembly is formed of an excess oxygen containing material.
Claim 3
Dependent Claim
29 words
The structure of claim 1, wherein both the portion of the substrate assembly and the layer formed over the second electrode is formed of an excess oxygen containing material.
Claim 4
Dependent Claim
17 words
The structure of claim 1, wherein the excess oxygen containing material includes an ozone enhanced oxide material.
Claim 5
Dependent Claim
18 words
The structure of claim 3, wherein the ozone enhanced oxide material is a doped ozone enhanced oxide material.
Claim 6
Dependent Claim
17 words
The structure of claim 3, wherein the ozone enhanced oxide material is an ozone enhanced tetraethylorthosilicate material.
Claim 7
Dependent Claim
18 words
The structure of claim 5, wherein the ozone enhanced tetraethylorthosilicate material is a doped ozone enhanced tetraethylorthosilicate material.
Claim 8
Dependent Claim
38 words
The structure of claim 6, wherein the doped ozone enhanced tetraethylorthosilicate material is doped with boron and phosphorous in a concentration ranging from 0 percent to about 5 percent boron and 0 percent to about 8 percent phosphorous.
Claim 9
Dependent Claim
23 words
The structure of claim 5, wherein the ozone enhanced tetraethylorthosilicate material includes an oxygen concentration of about 66.67 percent to about 76.6 percent.
Claim 10
Dependent Claim
89 words
A capacitor structure, comprising: a first electrode formed on at least a portion of a substrate assembly; a dielectric material on at least a portion of the first electrode; a second electrode on the dielectric material; and a layer formed over at least a portion of the second electrode, wherein at least one of the portion of the subtrate assembly and the layer formed over the second electrode is formed of an excess oxygen containing material, wherein the excess oxygen containing material includes a doped ozone enhanced oxide material.
Claim 11
Dependent Claim
89 words
A capacitor structure, comprising: a first electrode formed on at least a portion of a substrate assembly; a dielectric material on at least a portion of the first electrode; a second electrode on the dielectric material; and a layer formed over at least a portion of the second electrode, wherein at least one of the portion of the subtrate assembly and the layer formed over the second electrode is formed of an excess oxygen containing material, wherein the excess oxygen containing material includes a doped ozone enhanced oxide material.
Claim 12
Dependent Claim
29 words
The structure of claim 9, wherein both the portion of the substrate assembly and the layer formed over the second electrode is formed of an excess oxygen containing material.
Claim 13
Dependent Claim
89 words
A capacitor structure, comprising: a first electrode formed on at least a portion of a substrate assembly; a dielectric material on at least a portion of the first electrode; a second electrode on the dielectric material; and a layer formed over at least a portion of the second electrode, wherein at least one of the portion of the substrate assembly and the layer formed over the second electrode is formed of an excess oxygen containing material, wherein the excess oxygen containing material includes a doped ozone enhanced tetraethylorthosilicate material.
Claim 14
Dependent Claim
89 words
A capacitor structure, comprising: a first electrode formed on at least a portion of a substrate assembly; a dielectric material on at least a portion of the first electrode; a second electrode on the dielectric material; and a layer formed over at least a portion of the second electrode, wherein at least one of the portion of the substrate assembly and the layer formed over the second electrode is formed of an excess oxygen containing material, wherein the excess oxygen containing material includes a doped ozone enhanced tetraethylorthosilicate material.
Claim 15
Dependent Claim
29 words
The structure of claim 11, wherein both the portion of the substrate assembly and the layer formed over the second electrode is formed of an excess oxygen containing material.
Claim 16
Dependent Claim
38 words
The structure of claim 11, wherein the doped ozone enhanced tetraethylorthosilicate material is doped with boron and phosphorous in a concentration ranging from 0 percent to about 5 percent boron and 0 percent to about 8 percent phosphorous.
Claim 17
Dependent Claim
24 words
The structure of claim 11, wherein the doped ozone enhanced tetraethylorthosilicate material includes an oxygen concentration of about 66.67 percent to about 76.6 percent.
Claim 18
Dependent Claim
108 words
A capacitor structure, comprising: a first electrode formed on at least a portion of a substrate assembly; a dielectric material on at least a portion of the first electrode; a second electrode on the dielectric material; and a layer formed over at least a portion of the second electrode, wherein at least one of the portion of the substrate assembly and the layer formed over the second electrode is formed of an excess oxygen containing material, wherein the excess oxygen containing material includes an ozone enhanced tetraethylorthosilicate material, and further wherein the ozone enhanced tetraethylorthosilicate material includes an oxygen concentration of about 66.67 percent to about 76.6 percent.
Claim 19
Dependent Claim
108 words
A capacitor structure, comprising: a first electrode formed on at least a portion of a substrate assembly; a dielectric material on at least a portion of the first electrode; a second electrode on the dielectric material; and a layer formed over at least a portion of the second electrode, wherein at least one of the portion of the substrate assembly and the layer formed over the second electrode is formed of an excess oxygen containing material, wherein the excess oxygen containing material includes an ozone enhanced tetraethylorthosilicate material, and further wherein the ozone enhanced tetraethylorthosilicate material includes an oxygen concentration of about 66.67 percent to about 76.6 percent.
Claim 20
Dependent Claim
29 words
The structure of claim 15, wherein both the portion of the substrate assembly and the layer formed over the second electrode is formed of an excess oxygen containing material.
Claim 21
Dependent Claim
18 words
The structure of claim 15, wherein the ozone enhanced tetraethylorthosilicate material is a doped ozone enhanced tetraethylorthosilicate material.
Claim 22
Dependent Claim
38 words
The structure of claim 17, wherein the doped ozone enhanced tetraethylorthosilicate material is doped with boron and phosphorous in a concentration ranging from 0 percent to about 5 percent boron and 0 percent to about 8 percent phosphorous.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2003-09-26 | 2004-03-27 | 2004-09-26 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2007-09-26 | 2008-03-27 | 2008-09-26 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2011-09-26 | 2012-03-27 | 2012-09-26 | $7700.00 | Window Closed / Lapsed |