US6124618A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Dynamic threshold MOSFET using accumulated base BJT level shifter for low voltage sub-quarter micron transistor
Assignee: Taiwan Semiconductor Manufacturing Co TSMC Ltd
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Filing: 1999-08-23
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Granted: 2000-09-26
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Expires: 2019-08-23
Abstract
Abstract A dynamic threshold voltage MOSFET to provide increase drain-to-source saturation current (IDSsat) and lower off current (Ioff) is described. The dynamic threshold voltage MOSFET has a first diffusion-well of a material of a first conductivity type formed at the surface of the substrate to form a bulk region. A source region and a drain region of a material of a second conductivity type are diffused into the diffusion-well. A first gate is then placed on a first oxide surface above the substrate between the source and drain regions. An accumulated base bipolar transistor is then placed on the semiconductor substrate. The base of the accumulated base bipolar transistor is connected to the gate, the emitter is connected to the diffusion-well. A resistor is connected between the emitter of the accumulated base bipolar transistor and a substrate biasing voltage source. A biasing circuit connected to the collector of the accumulated base bipolar transistor to provide a bias voltage for the accumulated base bipolar transistor.
Inventors
- 👤 Shyh-Chyi Wong
- 👤 Mong-Song Liang
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-07 20:18
CPC Classifications
H; H10; H10D; H10D84/00; H10D84/40; H10D84/401; H10D84/403; H10D86/00; H10D86/201
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
133 words
A dynamic threshold voltage MOSFET constructed on a substrate having increased drain-to-source saturation current, comprising: a first diffusion-well of a material of a first conductivity type formed at the surface of the substrate to form a bulk region; a source region and a drain region of a material of a second conductivity type diffused into the diffusion-well; a first gate placed on a first oxide surface above the substrate between the source and drain regions; an accumulated base bipolar transistor having a base connected to the gate, an emitter connected to the diffusion-well, and a collector; a resistor connected between the emitter and a substrate biasing voltage source; and a biasing circuit connected to the collector of the accumulated base bipolar transistor to provide a bias voltage for said accumulated base bipolar transistor.
Claim 2
Dependent Claim
133 words
A dynamic threshold voltage MOSFET constructed on a substrate having increased drain-to-source saturation current, comprising: a first diffusion-well of a material of a first conductivity type formed at the surface of the substrate to form a bulk region; a source region and a drain region of a material of a second conductivity type diffused into the diffusion-well; a first gate placed on a first oxide surface above the substrate between the source and drain regions; an accumulated base bipolar transistor having a base connected to the gate, an emitter connected to the diffusion-well, and a collector; a resistor connected between the emitter and a substrate biasing voltage source; and a biasing circuit connected to the collector of the accumulated base bipolar transistor to provide a bias voltage for said accumulated base bipolar transistor.
Claim 3
Dependent Claim
39 words
The dynamic threshold voltage MOSFET of claim 1 wherein a voltage developed between the bulk and the source is increased as a voltage is applied between the gate and the source is increased thus increasing the drain-to-source saturation current.
Claim 4
Dependent Claim
91 words
The dynamic threshold voltage MOSFET of claim 1 wherein the accumulated base bipolar junction transistor comprises: a second diffusion-well of the material of the first conductivity type formed at the substrate to form the base of the accumulated base bipolar transistor; a source region and an emitter region of the material of the second conductivity type diffused into the second diffusion-well to form the collector and the emitter of the accumulated base bipolar junction transistor; and a second gate placed on a second oxide surface and coupled to the source region.
Claim 5
Dependent Claim
33 words
The dynamic threshold voltage MOSFET of claim 1 wherein the substrate is a semiconductor substrate of a material of the second conductivity type and the first diffusion is diffused into the semiconductor substrate.
Claim 6
Dependent Claim
47 words
The dynamic threshold voltage MOSFET of claim 1 wherein the substrate is an insulating material having a semiconductor epitaxial layer of the material of the second conductivity type formed on the surface of the insulating material and the first diffusion-well is diffused into the semiconductor epitaxial layer.
Claim 7
Dependent Claim
28 words
The dynamic threshold voltage MOSFET of claim 1 wherein the accumulated base junction transistor occupies an area that is from 10% to 100% area of the first diffusion-well.
Claim 8
Dependent Claim
102 words
A dynamic threshold voltage (V T ) modification circuit to dynamically alter the threshold voltage (V T ) of a MOSFET during operation to increase a drain-to-source saturation current while minimizing a drain-to-source off current, comprising: an accumulated base bipolar transistor having a base connected to a gate of said MOSFET, an emitter connected to a bulk region of said MOSFET, and a collector; a resistor connected between the emitter of the accumulated base bipolar transistor and a substrate biasing voltage source; and a voltage biasing circuit connected to the collector to provide a biasing voltage to the accumulated base bipolar transistor.
Claim 9
Dependent Claim
102 words
A dynamic threshold voltage (V T ) modification circuit to dynamically alter the threshold voltage (V T ) of a MOSFET during operation to increase a drain-to-source saturation current while minimizing a drain-to-source off current, comprising: an accumulated base bipolar transistor having a base connected to a gate of said MOSFET, an emitter connected to a bulk region of said MOSFET, and a collector; a resistor connected between the emitter of the accumulated base bipolar transistor and a substrate biasing voltage source; and a voltage biasing circuit connected to the collector to provide a biasing voltage to the accumulated base bipolar transistor.
Claim 10
Dependent Claim
51 words
The dynamic threshold voltage (V T ) modification circuit of claim 7 wherein a voltage developed at the emitter of the accumulated base bipolar junction transistor is increased as a voltage applied between the gate and source of the MOSFET is increased, thus increasing the drain-to-source saturation current of the MOSFET.
Claim 11
Dependent Claim
28 words
The dynamic threshold voltage (V T ) modification circuit of claim 7 wherein the accumulated base bipolar transistor occupies from 10% to 100% the area of the MOSFET.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2003-09-26 | 2004-03-27 | 2004-09-26 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2007-09-26 | 2008-03-27 | 2008-09-26 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2011-09-26 | 2012-03-27 | 2012-09-26 | $7700.00 | Window Closed / Lapsed |