US6124191A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Self-aligned contact process using low density/low k dielectric
Assignee: RV SAT Inc
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Filing: 1997-12-31
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Granted: 2000-09-26
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Expires: 2017-12-31
Abstract
Abstract Method and apparatus for fabricating contacts to substrate regions through a low k, low density dielectric. A cap is formed over gates and side spacers are formed along the edges of the gates so as to surround the gates in a relatively dense (e.g., silicon dioxide) insulative material. A low k or low density layer of a polymer or silica aerogel or xerogel material is formed in contact with the substrate covering the gate structures including the spacers. An unlanded contact opening is etched through the low k, low density dielectric with an etchant that provides high selectivity between the insulation surrounding the gate and the low k, low density layer.
Inventors
- 👤 Mark T. Bohr
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 19:17
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/069
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
126 words
A process for forming a MOS transistor on a silicon substrate, comprising: forming a gate; insulating an upper surface of the gate with an insulator which includes a first dielectric material; covering the substrate with a layer of silicon dioxide; anisotropically etching the silicon dioxide to form sidewall spacers on the gate; depositing a layer of perfluorocyclobutane (PFCB) organic polymer over the substrate; etching an opening to the substrate through the layer of PFCB organic polymer with an etchant that etches the layer of PFCB organic polymer at a rate at least 10 times faster than the etchant etches the layer of silicon dioxide and the first dielectric material, wherein portions of the spacers and the first dielectric material are exposed during the step of etching.
Claim 2
Dependent Claim
126 words
A process for forming a MOS transistor on a silicon substrate, comprising: forming a gate; insulating an upper surface of the gate with an insulator which includes a first dielectric material; covering the substrate with a layer of silicon dioxide; anisotropically etching the silicon dioxide to form sidewall spacers on the gate; depositing a layer of perfluorocyclobutane (PFCB) organic polymer over the substrate; etching an opening to the substrate through the layer of PFCB organic polymer with an etchant that etches the layer of PFCB organic polymer at a rate at least 10 times faster than the etchant etches the layer of silicon dioxide and the first dielectric material, wherein portions of the spacers and the first dielectric material are exposed during the step of etching.
Claim 3
Dependent Claim
29 words
The process defined by claim 1 including forming an additional insulative layer over the layer of PFCB organic polymer and then planarizing the additional insulative layer with chemical-mechanical polishing.
Claim 4
Dependent Claim
113 words
The process for forming an MOS transistor comprising: forming a gate, having a lower surface insulated from a substrate and an upper surface cover with a cap formed from a first dielectric material; forming spacers on sides of the gate from silicon dioxide; covering the substrate including the cap and spacers with a layer of nanoporous silica based dielectric which contacts the substrate adjacent to the spacers; etching an-opening to contact the substrate through the nanoporous silica based dielectric with an etchant that etches the nanoporous silica based dielectric at least 10 times faster than the silicon dioxide, wherein portions of the spacers and the caps are exposed during the step of etching.
Claim 5
Dependent Claim
113 words
The process for forming an MOS transistor comprising: forming a gate, having a lower surface insulated from a substrate and an upper surface cover with a cap formed from a first dielectric material; forming spacers on sides of the gate from silicon dioxide; covering the substrate including the cap and spacers with a layer of nanoporous silica based dielectric which contacts the substrate adjacent to the spacers; etching an-opening to contact the substrate through the nanoporous silica based dielectric with an etchant that etches the nanoporous silica based dielectric at least 10 times faster than the silicon dioxide, wherein portions of the spacers and the caps are exposed during the step of etching.
Claim 6
Dependent Claim
34 words
The process defined by claim 3 including forming a dielectric layer over the nanoporous silica based dielectric prior to the etching step and then chemically-mechanically polishing the dielectric layer prior to the etching step.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2003-09-26 | 2004-03-27 | 2004-09-26 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2007-09-26 | 2008-03-27 | 2008-09-26 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2011-09-26 | 2012-03-27 | 2012-09-26 | $7700.00 | Window Closed / Lapsed |