US6120846A
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Method for the selective deposition of bismuth based ferroelectric thin films by chemical vapor deposition
Assignee: Infineon Technologies AG
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Filing: 1997-12-23
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Granted: 2000-09-19
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Expires: 2017-12-23
Abstract
Abstract A method is described for the selective deposition of bismuth based ferroelectric films by selective chemical vapor deposition on a substrate. Selectivity in the deposition process is attained by selection of substrate-precursor combinations which assure high bismuth deposition efficiency in certain areas and low bismuth deposition efficiency in other areas in combination with specific process parameters.
Inventors
- 👤 Frank Hintermaier
- 👤 Bryan Hendrix
- 👤 Jeff Roeder
- 👤 Peter Van Buskirk
- 👤 Thomas H. Baum
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 02:05
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; C; C07; C07F; C07F9/00; C07F9/94; C23; C23C; C23C16/00; C23C16/04; C23C16/22; C23C16/30; C23C16/40; C23C16/44; C23C16/455; C23C16/45512; H10D; H10D1/00; H10D1/60; H10D1/68; H10D1/682; H10P14/66; H10P14/668; H10P14/69; H10P14/692; H10P14/6921; H10P14/69215; H10P14/6938; H10P14/69398; H10P14/694; H10P14/6943; H10P14/69433
Claims Analysis
Total Claims: 36
Claim 1
Independent Claim
44 words
A method, comprising: simultaneously exposing an insulating portion and electrically conductive portion of a substrate member to a chemical vapor deposition process; and during such chemical vapor deposition process selectively chemical vapor depositing a bismuth based ferroelectric thin film on the electrically conductive portion.
Claim 2
Independent Claim
44 words
A method, comprising: simultaneously exposing an insulating portion and electrically conductive portion of a substrate member to a chemical vapor deposition process; and during such chemical vapor deposition process selectively chemical vapor depositing a bismuth based ferroelectric thin film on the electrically conductive portion.
Claim 3
Independent Claim
122 words
A method for the selective deposition of a bismuth based ferroelectric film on a substrate member by metallorganic chemical vapor deposition, comprises: placing the substrate member having the insulating and electrically conductive surfaces in a chemical vapor deposition apparatus; heating the substrate to an elevated temperature within the apparatus; simultaneously exposing the insulating and electrically conductive surfaces of the substrate member to vaporized metallorganic precursors including a bismuth precursor carried by an inert gas into said apparatus and thermally decomposing said precursors for a time period sufficient to deposit the bismuth based ferroelectric film on the electrically conductive surface and a non-ferroelectric metal oxide film on the insulating surface; terminating the flow of said precursors; and removing the substrate from the apparatus.
Claim 4
Independent Claim
122 words
A method for the selective deposition of a bismuth based ferroelectric film on a substrate member by metallorganic chemical vapor deposition, comprises: placing the substrate member having the insulating and electrically conductive surfaces in a chemical vapor deposition apparatus; heating the substrate to an elevated temperature within the apparatus; simultaneously exposing the insulating and electrically conductive surfaces of the substrate member to vaporized metallorganic precursors including a bismuth precursor carried by an inert gas into said apparatus and thermally decomposing said precursors for a time period sufficient to deposit the bismuth based ferroelectric film on the electrically conductive surface and a non-ferroelectric metal oxide film on the insulating surface; terminating the flow of said precursors; and removing the substrate from the apparatus.
Claim 5
Dependent Claim
22 words
The method in accordance with claim 2 wherein the thermal decomposition is effected at a temperature within the range of 400-700° C.
Claim 6
Dependent Claim
22 words
The method in accordance with claim 2 wherein the thermal decomposition is effected at a pressure ranging from 0.1 to 10 torr.
Claim 7
Dependent Claim
24 words
The method in accordance with claim 2 wherein the thermal decomposition is effected at a gas flow rate ranging from 100 to 20000 sccm.
Claim 8
Dependent Claim
21 words
The method in accordance with claim 2 wherein said ferroelectric film is SrBi 2 Ta 2 O 9 or derivatives thereof.
Claim 9
Dependent Claim
21 words
The method in accordance with claim 2 wherein said ferroelectric film is Bi 4 Ti 3 O 12 or derivatives thereof.
Claim 10
Dependent Claim
32 words
The method in accordance with claim 2 wherein the precursors are generated by evaporation of solid or liquid compositions which are carried to the vapor deposition apparatus by an inert carrier gas.
Claim 11
Dependent Claim
30 words
The method in accordance with claim 2 wherein the electrically conductive surface is a noble metal selected from the group consisting of platinum, palladium, rhodium, iridium, ruthenium, osmium and gold.
Claim 12
Dependent Claim
20 words
The method in accordance with claim 9 wherein the noble metal is deposited upon a layer of an insulating material.
Claim 13
Dependent Claim
20 words
The method in accordance with claim 9 wherein the noble metal is deposited upon a layer of a conducting material.
Claim 14
Dependent Claim
14 words
The method in accordance with claim 2 wherein the insulating surface is silicon dioxide.
Claim 15
Dependent Claim
14 words
The method in accordance with claim 2 wherein the insulating surface is silicon nitride.
Claim 16
Dependent Claim
24 words
The method in accordance with claim 11 wherein said conducting material is selected from the group consisting of titanium, tantalum, tungsten and doped silicon.
Claim 17
Dependent Claim
22 words
The method in accordance with claim 14 wherein a conducting barrier layer is deposited intermediate the noble metal and the conducting layer.
Claim 18
Dependent Claim
39 words
The method in accordance with claim 2 wherein the bismuth precursor is selected from the group consisting of triphenyl bismuth, tritolyl bismuth, bismuth alkyl, bismuth alkoxides, bismuth carboxylates, bismuth b-diketonates, bismuth amides, mixed ligand bismuth compound and mixtures thereof.
Claim 19
Dependent Claim
23 words
The method in accordance with claim 2 wherein the precursors comprise a mixture of strontium bis (β-diketonate), bismuth triphenyl and tantalum alkoxide β-diketonate.
Claim 20
Dependent Claim
24 words
The method in accordance with claim 2 wherein the precursors comprise a mixture of Sr2,2,5,5-tetramethylheptane-3,5-dionate as tetraglyme adduct, triphenyl bismuth and tantalum 2,2,5,5-tetramethylheptane-3,5-dionate tetrakis(isopropoxide).
Claim 21
Dependent Claim
38 words
The method in accordance with claim 2 wherein the deposited ferroelectric film is SrBi2Ta 2 O 9 which has been subjected to a high temperature anneal in the presence of oxygen at a temperature ranging from 600-820° C.
Claim 22
Dependent Claim
30 words
The method in accordance with claim 2 wherein the substrate is heated to a temperature within the range of 650-670° C. at a pressure within the range of 0.1-7.0 torr.
Claim 23
Dependent Claim
30 words
The method in accordance with claim 2 wherein the substrate is heated to a temperature within the range of 600-650° C. at a pressure within the range of 0.1-5.0 torr.
Claim 24
Dependent Claim
30 words
The method in accordance with claim 2 wherein the substrate is heated to a temperature within the range of 550-600° C. at a pressure within the range of 0.1-2.0 torr.
Claim 25
Dependent Claim
30 words
The method in accordance with claim 2 wherein the substrate is heated to a temperature within the range of 500-550° C. at a pressure within the range of 0.1-0.5 torr.
Claim 26
Dependent Claim
30 words
The method in accordance with claim 2 wherein the precursor is delivered to the vapor deposition apparatus at a liquid delivery rate within the range of 0.05-1 milliliter per minute.
Claim 27
Dependent Claim
20 words
The method in accordance with claim 24 wherein the precursor delivery rate ranges from 0.07 to 0.20 milliliters per minute.
Claim 28
Dependent Claim
16 words
The method in accordance with claim 2 wherein the carrier gas flow ranges from 200-400 sccm.
Claim 29
Dependent Claim
34 words
The method in accordance with claim 19 wherein the SrBi 2 Ta 2 O 9 ferroelectric film is deposited upon a platinum electrically conductive surface and SrTaO x is deposited upon said insulating surface.
Claim 30
Dependent Claim
26 words
The method in accordance with claim 2 wherein another layer of a conductive material is deposited upon the chemical vapor deposited layer to form a capacitor.
Claim 31
Independent Claim
47 words
A method, comprising: providing a substrate having an insulating portion and a conductive portion; simultaneously exposing the insulating portion and the conductive portion to chemically vapor deposition with such deposition selectively depositing a ferroelectric film over the conductive portion and a non-ferroelectric film over the insulating portion.
Claim 32
Independent Claim
47 words
A method, comprising: providing a substrate having an insulating portion and a conductive portion; simultaneously exposing the insulating portion and the conductive portion to chemically vapor deposition with such deposition selectively depositing a ferroelectric film over the conductive portion and a non-ferroelectric film over the insulating portion.
Claim 33
Dependent Claim
20 words
The method recited in claim 29 including processing the conductive portion to enhance absorption sites for the ferroelectric film deposition.
Claim 34
Dependent Claim
17 words
The method recited in claim 29 wherein the processing comprises roughening a surface of the conductive portion.
Claim 35
Independent Claim
13 words
The method recited in claims 29 wherein the conductive portion is catalytically active.
Claim 36
Independent Claim
22 words
The method recited in claims 29, 30, 31 or 32 wherein the chemical vapor deposition comprises depositing a bismuth containing ferroelectric film.
References Cited (Backward Citations)
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