US5589425A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Process of selective area chemical vapor deposition of metal films
Assignee: Fujitsu Semiconductor Ltd
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Filing: 1994-11-29
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Granted: 1996-12-31
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Expires: 2014-11-29
Abstract
Abstract A process of growing a film of a metal on a substrate in a selective area thereof by chemical vapor deposition, the process comprising the steps of: preparing a source having a molecule comprising a metal and a radical; providing a substrate having a selective area made of a first substance which is unreactive with the radical and the other area made of copper which is reactive with the radical; and supplying the source onto the substrate held at a film growing temperature to induce a reaction on the substrate, such that, in the selective area, the molecule of the source is bonded to the first substance and decomposed to precipitate the metal on the first substance while, in the other area, the radical of the molecule is combined with the copper to cover the other area of the substrate with a coating which is unreactive with the molecule of the source.
Inventors
- 👤 Masataka Hoshino
- 👤 Nobuhiro Misawa
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 02:35
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/40; H10P14/42; H10P14/43; C; C23; C23C; C23C16/00; C23C16/04; C23C16/06; C23C16/18; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/056; H10W20/057
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
167 words
A process of growing a film of a noble metal on a substrate in a selective area thereof by chemical vapor deposition, said process comprising the steps of: preparing a source material having a molecule comprising a noble metal and a hexafluoroacetylacetonate radical (C 5 HF 6 O 2 ); providing a substrate having a selective area made of a first substance which is unreactive with said radical and an other area made of copper which is reactive with said radical; and supplying said source material onto said substrate held at a film growing temperature to induce a reaction on said substrate, such that, in said selective area, said molecule of said source material is bonded to said first substance and decomposed to precipitate said noble metal on said first substance while, in said other area, said radical of said molecule is combined with said copper to cover said other area of said substrate with a coating which is unreactive with said molecule of said source material.
Claim 2
Dependent Claim
167 words
A process of growing a film of a noble metal on a substrate in a selective area thereof by chemical vapor deposition, said process comprising the steps of: preparing a source material having a molecule comprising a noble metal and a hexafluoroacetylacetonate radical (C 5 HF 6 O 2 ); providing a substrate having a selective area made of a first substance which is unreactive with said radical and an other area made of copper which is reactive with said radical; and supplying said source material onto said substrate held at a film growing temperature to induce a reaction on said substrate, such that, in said selective area, said molecule of said source material is bonded to said first substance and decomposed to precipitate said noble metal on said first substance while, in said other area, said radical of said molecule is combined with said copper to cover said other area of said substrate with a coating which is unreactive with said molecule of said source material.
Claim 3
Dependent Claim
15 words
A process according to claim 1, wherein said metal is selected from gold and platinum.
Claim 4
Dependent Claim
31 words
A process according to claim 1, wherein said metal is gold and said source material consists of dimethyl gold hexafluoroacetylacetonate ((CH 3 ) 2 Au(C 5 HF 6 O 2 )).
Claim 5
Dependent Claim
28 words
A process according to claim 1, wherein said metal is platinum and said source material consists of platinum dihexafluoroacetylacetonate (Pt(C 5 HF 6 O 2 ) 2 ).
Claim 6
Dependent Claim
45 words
A process according to claim 1, wherein said first substance, which forms said selective area of said substrate, is selected from the group consisting of gold (Au), tungsten (W), platinum (Pt), titanium (Ti), titanium nitride (TiN), silicon nitride (SiN), and silicon oxide (SiO 2 ).
References Cited (Backward Citations)
US4888204A
Cited
US5316796A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1999-12-31 | 2000-07-01 | 2000-12-31 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2003-12-31 | 2004-07-01 | 2004-12-31 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2007-12-31 | 2008-07-01 | 2008-12-31 | $7700.00 | Window Closed / Lapsed |