Patent US6118148A successfully refreshed from Google Patents.
US6118148A
Expired / Lapsed
US
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Semiconductor device and manufacturing method thereof
Assignee: Semiconductor Energy Laboratory Co Ltd
•
Filing: 1997-11-04
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Granted: 2000-09-12
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Expires: 2017-11-04
Abstract
Abstract In a CMOS circuit, impurity regions are formed in the channel forming region of each of an n-channel and p-channel transistors along the channel direction. The intervals between the impurity regions in the n-channel transistor is set narrower than those between the impurity regions in the p-channel transistor so as to make the absolute values of the threshold voltages of the n-channel and p-channel transistors approximately equal to each other. Where active layers are formed by utilizing a crystal structural body that is a collection of needle-like or columnar crystals, the same effect can be attained by controlling the width of the needle-like or columnar crystals.
Inventors
- 👤 Shunpei Yamazaki
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 16:26
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/60; H10D30/67; H10D30/6757; H10D62/00; H10D62/40; H10D84/00; H10D84/80; H10D84/82; H10D84/83; H10D84/85; H10D86/00; H10D86/40; H10D86/421; H10D86/425; H10D86/427; H10D86/60
Claims Analysis
Total Claims: 86
Claim 1
Independent Claim
173 words
A CMOS semiconductor device having a source region, a drain region and a channel forming region, having complementary n-channel semiconductor device and p-channel semiconductor device, comprising: first means provided in the n-channel semiconductor device for strengthening a narrow channel effect; second means provided in the p-channel semiconductor device for strengthening a short channel effect; and first impurity regions in said channel forming region of the n-channel semiconductor device and second impurity regions in said channel forming region of the p-channel semiconductor device, the first and second impurity regions being formed artificially and locally so as to be approximately parallel with a channel direction, wherein the first and second means are configured so as to calculate absolute values of threshold voltages of the n-channel and p-channel semiconductor devices to be approximately equal to each other; wherein the first means is for intentionally narrowing an interval between the first impurity regions; and wherein the second means is for making an interval between the second impurity regions wider than the interval between the first impurity regions.
Claim 2
Dependent Claim
173 words
A CMOS semiconductor device having a source region, a drain region and a channel forming region, having complementary n-channel semiconductor device and p-channel semiconductor device, comprising: first means provided in the n-channel semiconductor device for strengthening a narrow channel effect; second means provided in the p-channel semiconductor device for strengthening a short channel effect; and first impurity regions in said channel forming region of the n-channel semiconductor device and second impurity regions in said channel forming region of the p-channel semiconductor device, the first and second impurity regions being formed artificially and locally so as to be approximately parallel with a channel direction, wherein the first and second means are configured so as to calculate absolute values of threshold voltages of the n-channel and p-channel semiconductor devices to be approximately equal to each other; wherein the first means is for intentionally narrowing an interval between the first impurity regions; and wherein the second means is for making an interval between the second impurity regions wider than the interval between the first impurity regions.
Claim 3
Dependent Claim
116 words
A CMOS semiconductor device having a source, region, a drain region, and a channel forming region, having complementary n-channel semiconductor device and p-channel semiconductor device, comprising: first impurity regions disposed in said channel forming region of the n-channel semiconductor device; and second impurity regions disposed in said channel forming region of the p-channel semiconductor device, the first and second impurity regions being formed artificially and locally so as to be approximately parallel with a channel direction, wherein an interval between the first impurity regions is made narrower than an interval between the second impurity regions so as to make absolute values of threshold voltages of the n-channel and p-channel semiconductor devices approximately equal to each other.
Claim 4
Dependent Claim
116 words
A CMOS semiconductor device having a source, region, a drain region, and a channel forming region, having complementary n-channel semiconductor device and p-channel semiconductor device, comprising: first impurity regions disposed in said channel forming region of the n-channel semiconductor device; and second impurity regions disposed in said channel forming region of the p-channel semiconductor device, the first and second impurity regions being formed artificially and locally so as to be approximately parallel with a channel direction, wherein an interval between the first impurity regions is made narrower than an interval between the second impurity regions so as to make absolute values of threshold voltages of the n-channel and p-channel semiconductor devices approximately equal to each other.
Claim 5
Dependent Claim
29 words
The semiconductor device according to claim 1 or 2, wherein at least said channel forming region in each of the n-channel and p-channel semiconductor devices comprises single crystal silicon.
Claim 6
Dependent Claim
175 words
A semiconductor device having a CMOS structure in which a complementary n-channel semiconductor device and p-channel semiconductor device are formed on a substrate having an insulative surface, comprising: first means provided in the n-channel semiconductor device, for strengthening a narrow channel effect; second means provided in the P-channel semiconductor device, for strengthening a short channel effect; and first impurity regions in a channel forming region of the n-channel semiconductor device and second impurity regions in a channel forming region of the p-channel semiconductor device, the first and second impurity regions being formed artificially and locally so as to be approximately parallel with a channel direction, wherein the first and second means are configured so as to calculate absolute values of threshold voltages of the n-channel and p-channel semiconductor devices to be approximately equal to each other; wherein the first means is for intentionally narrowing an interval between the first impurity regions; and wherein the second means is for making an interval between the second impurity regions wider than the interval between the first impurity regions.
Claim 7
Dependent Claim
175 words
A semiconductor device having a CMOS structure in which a complementary n-channel semiconductor device and p-channel semiconductor device are formed on a substrate having an insulative surface, comprising: first means provided in the n-channel semiconductor device, for strengthening a narrow channel effect; second means provided in the P-channel semiconductor device, for strengthening a short channel effect; and first impurity regions in a channel forming region of the n-channel semiconductor device and second impurity regions in a channel forming region of the p-channel semiconductor device, the first and second impurity regions being formed artificially and locally so as to be approximately parallel with a channel direction, wherein the first and second means are configured so as to calculate absolute values of threshold voltages of the n-channel and p-channel semiconductor devices to be approximately equal to each other; wherein the first means is for intentionally narrowing an interval between the first impurity regions; and wherein the second means is for making an interval between the second impurity regions wider than the interval between the first impurity regions.
Claim 8
Dependent Claim
150 words
A semiconductor device having a CMOS structure in which a complementary n-channel semiconductor device and p-channel semiconductor device are formed on a substrate having an insulative surface, comprising: an active layer constituting a crystal structural body that includes a collection of needle-like or columnar crystals approximately parallel with the substrate and having grain boundaries having directivity; first means provided in the n-channel semiconductor device for intentionally narrowing a width of the needlelike or columnar crystals in the n-channel semiconductor device; second means provided in the p-channel semiconductor device for making a width of the needle-like or columnar crystals in the p-channel semiconductor device larger than the width of the needle-like or columnar crystals in the n-channel semiconductor device; and wherein the first and second means are configured so as to calculate absolute values of threshold voltages of the n-channel and p-channel semiconductor devices to be approximately equal to each other.
Claim 9
Dependent Claim
150 words
A semiconductor device having a CMOS structure in which a complementary n-channel semiconductor device and p-channel semiconductor device are formed on a substrate having an insulative surface, comprising: an active layer constituting a crystal structural body that includes a collection of needle-like or columnar crystals approximately parallel with the substrate and having grain boundaries having directivity; first means provided in the n-channel semiconductor device for intentionally narrowing a width of the needlelike or columnar crystals in the n-channel semiconductor device; second means provided in the p-channel semiconductor device for making a width of the needle-like or columnar crystals in the p-channel semiconductor device larger than the width of the needle-like or columnar crystals in the n-channel semiconductor device; and wherein the first and second means are configured so as to calculate absolute values of threshold voltages of the n-channel and p-channel semiconductor devices to be approximately equal to each other.
Claim 10
Dependent Claim
122 words
A semiconductor device having a CMOS structure in which an n-channel semiconductor device and a p-channel semiconductor device that are formed on a substrate having an insulative surface are combined complementarily, comprising: first impurity regions disposed in a channel forming region of the n-channel semiconductor device; and second impurity regions disposed in a channel forming region of the p-channel semiconductor device, the first and second impurity regions being formed artificially and locally so as to be approximately parallel with a channel direction, wherein an interval between the first impurity regions is made narrower than an interval between the second impurity regions so as to make absolute values of threshold voltages of the n-channel and p-channel semiconductor devices approximately equal to each other.
Claim 11
Dependent Claim
122 words
A semiconductor device having a CMOS structure in which an n-channel semiconductor device and a p-channel semiconductor device that are formed on a substrate having an insulative surface are combined complementarily, comprising: first impurity regions disposed in a channel forming region of the n-channel semiconductor device; and second impurity regions disposed in a channel forming region of the p-channel semiconductor device, the first and second impurity regions being formed artificially and locally so as to be approximately parallel with a channel direction, wherein an interval between the first impurity regions is made narrower than an interval between the second impurity regions so as to make absolute values of threshold voltages of the n-channel and p-channel semiconductor devices approximately equal to each other.
Claim 12
Dependent Claim
133 words
A semiconductor device having a CMOS structure in which an n-channel semiconductor device and a p-channel semiconductor device that are formed on a substrate having an insulative surface are combined complementarily, wherein: an active layer of each of the n-channel and p-channel semiconductor devices is constituted of a crystal structural body that is a collection of needle-like or columnar crystals approximately parallel with the substrate and has grain boundaries having directivity; and a width of the needle-like or columnar crystals of the crystal structural body in the n-channel semiconductor device is made smaller than a width of the needle-like or columnar crystals of the crystal structural body in the p-channel semiconductor device so as to make absolute values of threshold voltages of the n-channel and p-channel semiconductor devices approximately equal to each other.
Claim 13
Dependent Claim
133 words
A semiconductor device having a CMOS structure in which an n-channel semiconductor device and a p-channel semiconductor device that are formed on a substrate having an insulative surface are combined complementarily, wherein: an active layer of each of the n-channel and p-channel semiconductor devices is constituted of a crystal structural body that is a collection of needle-like or columnar crystals approximately parallel with the substrate and has grain boundaries having directivity; and a width of the needle-like or columnar crystals of the crystal structural body in the n-channel semiconductor device is made smaller than a width of the needle-like or columnar crystals of the crystal structural body in the p-channel semiconductor device so as to make absolute values of threshold voltages of the n-channel and p-channel semiconductor devices approximately equal to each other.
Claim 14
Dependent Claim
32 words
The semiconductor device according to claim 7, wherein a film thickness of the active layer of the n-channel semiconductor device is smaller than that of the active layer of the p-channel semiconductor.
Claim 15
Dependent Claim
31 words
The semiconductor device according to claim 4 or 6, wherein at least the channel forming region of each of the n-channel and p-channel semiconductor devices is constituted of a polysilicon film.
Claim 16
Dependent Claim
33 words
The semiconductor device according to claim 6, wherein the first and second impurity regions are doped with one or a plurality of elements selected from the group consisting of oxygen, nitrogen, and carbon.
Claim 17
Dependent Claim
25 words
The semiconductor device according to claim 6, wherein the first impurity regions are doped with boron and the second impurity regions are doped with phosphorus.
Claim 18
Dependent Claim
169 words
A semiconductor device comprising: a substrate; a p-type transistor comprising a first semiconductor film over the substrate; an n-type transistor comprising a second semiconductor film over the substrate, wherein the first semiconductor film has at least a first source region, a first drain region and a first channel forming region formed between the first source region and the first drain region, said first channel forming region having a channel length of 0.01 to 2 μm and comprising first impurity regions and first carrier movement regions; wherein the second semiconductor film has at least a second source region, a second drain region and a second channel forming region formed between the second source region and the second drain region, said second channel forming region having a channel length of 0.01 to 2 μm and a channel width and comprising second impurity regions and second carrier movement regions; and wherein said second impurity regions are arranged along a direction of the channel width with an interval of 30 to 1000 Å.
Claim 19
Dependent Claim
169 words
A semiconductor device comprising: a substrate; a p-type transistor comprising a first semiconductor film over the substrate; an n-type transistor comprising a second semiconductor film over the substrate, wherein the first semiconductor film has at least a first source region, a first drain region and a first channel forming region formed between the first source region and the first drain region, said first channel forming region having a channel length of 0.01 to 2 μm and comprising first impurity regions and first carrier movement regions; wherein the second semiconductor film has at least a second source region, a second drain region and a second channel forming region formed between the second source region and the second drain region, said second channel forming region having a channel length of 0.01 to 2 μm and a channel width and comprising second impurity regions and second carrier movement regions; and wherein said second impurity regions are arranged along a direction of the channel width with an interval of 30 to 1000 Å.
Claim 20
Dependent Claim
14 words
The semiconductor device according to claim 12, wherein said substrate has an insulative surface.
Claim 21
Dependent Claim
22 words
The semiconductor device according to claim 12, wherein said first impurity regions comprise an impurity selected from oxygen, nitrogen, carbon and phosphorus.
Claim 22
Dependent Claim
22 words
The semiconductor device according to claim 12, wherein said second impurity regions comprise an impurity selected from oxygen, nitrogen, carbon and boron.
Claim 23
Dependent Claim
47 words
The semiconductor device according to claim 1, further comprising a main body, a camera section, an image receiving section, a manipulation switch and a display device operationally connected to constitute a TV camera, wherein said display device comprises said n-channel semiconductor device and said p-channel semiconductor device.
Claim 24
Dependent Claim
42 words
The semiconductor device according to claim 1, further comprising a main body, two display devices and a band section operationally connected to constitute a head-mounted display, wherein each of said display devices comprises said n-channel semiconductor device and said p-channel semiconductor device.
Claim 25
Dependent Claim
42 words
The semiconductor device according to claim 1, further comprising a main body, a display device, manipulation switches and an antenna operationally connected to constitute a car navigation apparatus, wherein said display device comprises said n-channel semiconductor device and said p-channel semiconductor device.
Claim 26
Dependent Claim
49 words
The semiconductor device according to claim 1, further comprising a main body, a voice output section, a voice input section, a display device, manipulation buttons and an antenna operationally connected to constitute a cellular telephone, wherein said display device comprises said n-channel semiconductor device and said p-channel semiconductor device.
Claim 27
Dependent Claim
49 words
The semiconductor device according to claim 1, further comprising a main body, a display device, a voice input section, manipulation switches, a battery and an image receiving section operationally connected to constitute a video camera, wherein said display device comprises said n-channel semiconductor device and said p-channel semiconductor device.
Claim 28
Dependent Claim
48 words
The semiconductor device according to claim 1, further comprising a main body, a light source, a reflection-type display device, an optical system and a screen operationally connected to constitute a front projection apparatus, wherein the reflection-type display device comprises the n-channel semiconductor device and said p-channel semiconductor device.
Claim 29
Dependent Claim
24 words
The semiconductor device according to claim 1, wherein the semiconductor device is an integrated circuit selected from a SRAM circuit and a DRAM circuit.
Claim 30
Dependent Claim
47 words
The semiconductor device according to claim 2, further comprising a main body, a camera section, an image receiving section, a manipulation switch and a display device operationally connected to constitute a TV camera, wherein said display device comprises said n-channel semiconductor device and said p-channel semiconductor device.
Claim 31
Dependent Claim
42 words
The semiconductor device according to claim 2, further comprising a main body, two display devices and a band section operationally connected to constitute a head-mounted display, wherein each of said display devices comprises said n-channel semiconductor device and said p-channel semiconductor device.
Claim 32
Dependent Claim
42 words
The semiconductor device according to claim 2, further comprising a main body, a display device, manipulation switches and an antenna operationally connected to constitute a car navigation apparatus, wherein said display device comprises said n-channel semiconductor device and said p-channel semiconductor device.
Claim 33
Dependent Claim
49 words
The semiconductor device according to claim 2, further comprising a main body, a voice output section, a voice input section, a display device, manipulation buttons and an antenna operationally connected to constitute a cellular telephone, wherein said display device comprises said n-channel semiconductor device and said p-channel semiconductor device.
Claim 34
Dependent Claim
49 words
The semiconductor device according to claim 2, further comprising a main body, a display device, a voice input section, manipulation switches, a battery and an image receiving section operationally connected to constitute a video camera, wherein said display device comprises said n-channel semiconductor device and said p-channel semiconductor device.
Claim 35
Dependent Claim
48 words
The semiconductor device according to claim 2, further comprising a main body, a light source, a reflection-type display device, an optical system and a screen operationally connected to constitute a front projection apparatus, wherein the reflection-type display device comprises the n-channel semiconductor device and said p-channel semiconductor device.
Claim 36
Dependent Claim
24 words
The semiconductor device according to claim 2, wherein the semiconductor device is an integrated circuit selected from a SRAM circuit and a DRAM circuit.
Claim 37
Dependent Claim
47 words
The semiconductor device according to claim 4, further comprising a main body, a camera section, an image receiving section, a manipulation switch and a display device operationally connected to constitute a TV camera, wherein said display device comprises said n-channel semiconductor device and said p-channel semiconductor device.
Claim 38
Dependent Claim
42 words
The semiconductor device according to claim 4, further comprising a main body, two display devices and a band section operationally connected to constitute a head-mounted display, wherein each of said display devices comprises said n-channel semiconductor device and said p-channel semiconductor device.
Claim 39
Dependent Claim
42 words
The semiconductor device according to claim 4, further comprising a main body, a display device, manipulation switches and an antenna operationally connected to constitute a car navigation apparatus, wherein said display device comprises said n-channel semiconductor device and said p-channel semiconductor device.
Claim 40
Dependent Claim
49 words
The semiconductor device according to claim 4, further comprising a main body, a voice output section, a voice input section, a display device, manipulation buttons and an antenna operationally connected to constitute a cellular telephone, wherein said display device comprises said n-channel semiconductor device and said p-channel semiconductor device.
Claim 41
Dependent Claim
49 words
The semiconductor device according to claim 4, further comprising a main body, a display device, a voice input section, manipulation switches, a battery and an image receiving section operationally connected to constitute a video camera, wherein said display device comprises said n-channel semiconductor device and said p-channel semiconductor device.
Claim 42
Dependent Claim
48 words
The semiconductor device according to claim 4, further comprising a main body, a light source, a reflection-type display device, an optical system and a screen operationally connected to constitute a front projection apparatus, wherein the reflection-type display device comprises the n-channel semiconductor device and said p-channel semiconductor device.
Claim 43
Dependent Claim
24 words
The semiconductor device according to claim 4, wherein the semiconductor device is an integrated circuit selected from a SRAM circuit and a DRAM circuit.
Claim 44
Dependent Claim
47 words
The semiconductor device according to claim 5, further comprising a main body, a camera section, an image receiving section, a manipulation switch and a display device operationally connected to constitute a TV camera, wherein said display device comprises said n-channel semiconductor device and said p-channel semiconductor device.
Claim 45
Dependent Claim
42 words
The semiconductor device according to claim 5, further comprising a main body, two display devices and a band section operationally connected to constitute a head-mounted display, wherein each of said display devices comprises said n-channel semiconductor device and said p-channel semiconductor device.
Claim 46
Dependent Claim
42 words
The semiconductor device according to claim 5, further comprising a main body, a display device, manipulation switches and an antenna operationally connected to constitute a car navigation apparatus, wherein said display device comprises said n-channel semiconductor device and said p-channel semiconductor device.
Claim 47
Dependent Claim
49 words
The semiconductor device according to claim 5, further comprising a main body, a voice output section, a voice input section, a display device, manipulation buttons and an antenna operationally connected to constitute a cellular telephone, wherein said display device comprises said n-channel semiconductor device and said p-channel semiconductor device.
Claim 48
Dependent Claim
49 words
The semiconductor device according to claim 5, further comprising a main body, a display device, a voice input section, manipulation switches, a battery and an image receiving section operationally connected to constitute a video camera, wherein said display device comprises said n-channel semiconductor device and said p-channel semiconductor device.
Claim 49
Dependent Claim
48 words
The semiconductor device according to claim 5, further comprising a main body, a light source, a reflection-type display device, an optical system and a screen operationally connected to constitute a front projection apparatus, wherein the reflection-type display device comprises the n-channel semiconductor device and said p-channel semiconductor device.
Claim 50
Dependent Claim
24 words
The semiconductor device according to claim 5, wherein the semiconductor device is an integrated circuit selected from a SRAM circuit and a DRAM circuit.
Claim 51
Dependent Claim
47 words
The semiconductor device according to claim 6, further comprising a main body, a camera section, an image receiving section, a manipulation switch and a display device operationally connected to constitute a TV camera, wherein said display device comprises said n-channel semiconductor device and said p-channel semiconductor device.
Claim 52
Dependent Claim
42 words
The semiconductor device according to claim 6, further comprising a main body, two display devices and a band section operationally connected to constitute a head-mounted display, wherein each of said display devices comprises said n-channel semiconductor device and said p-channel semiconductor device.
Claim 53
Dependent Claim
42 words
The semiconductor device according to claim 6, further comprising a main body, a display device, manipulation switches and an antenna operationally connected to constitute a car navigation apparatus, wherein said display device comprises said n-channel semiconductor device and said p-channel semiconductor device.
Claim 54
Dependent Claim
49 words
The semiconductor device according to claim 6, further comprising a main body, a voice output section, a voice input section, a display device, manipulation buttons and an antenna operationally connected to constitute a cellular telephone, wherein said display device comprises said n-channel semiconductor device and said p-channel semiconductor device.
Claim 55
Dependent Claim
49 words
The semiconductor device according to claim 6, further comprising a main body, a display device, a voice input section, manipulation switches, a battery and an image receiving section operationally connected to constitute a video camera, wherein said display device comprises said n-channel semiconductor device and said p-channel semiconductor device.
Claim 56
Dependent Claim
48 words
The semiconductor device according to claim 6, further comprising a main body, a light source, a reflection-type display device, an optical system and a screen operationally connected to constitute a front projection apparatus, wherein the reflection-type display device comprises the n-channel semiconductor device and said p-channel semiconductor device.
Claim 57
Dependent Claim
24 words
The semiconductor device according to claim 6, wherein the semiconductor device is an integrated circuit selected from a SRAM circuit and a DRAM circuit.
Claim 58
Dependent Claim
47 words
The semiconductor device according to claim 7, further comprising a main body, a camera section, an image receiving section, a manipulation switch and a display device operationally connected to constitute a TV camera, wherein said display device comprises said n-channel semiconductor device and said p-channel semiconductor device.
Claim 59
Dependent Claim
42 words
The semiconductor device according to claim 7, further comprising a main body, two display devices and a band section operationally connected to constitute a head-mounted display, wherein each of said display devices comprises said n-channel semiconductor device and said p-channel semiconductor device.
Claim 60
Dependent Claim
42 words
The semiconductor device according to claim 7, further comprising a main body, a display device, manipulation switches and an antenna operationally connected to constitute a car navigation apparatus, wherein said display device comprises said n-channel semiconductor device and said p-channel semiconductor device.
Claim 61
Dependent Claim
49 words
The semiconductor device according to claim 7, further comprising a main body, a voice output section, a voice input section, a display device, manipulation buttons and an antenna operationally connected to constitute a cellular telephone, wherein said display device comprises said n-channel semiconductor device and said p-channel semiconductor device.
Claim 62
Dependent Claim
49 words
The semiconductor device according to claim 7, further comprising a main body, a display device, a voice input section, manipulation switches, a battery and an image receiving section operationally connected to constitute a video camera, wherein said display device comprises said n-channel semiconductor device and said p-channel semiconductor device.
Claim 63
Dependent Claim
48 words
The semiconductor device according to claim 7, further comprising a main body, a light source, a reflection-type display device, an optical system and a screen operationally connected to constitute a front projection apparatus, wherein the reflection-type display device comprises the n-channel semiconductor device and said p-channel semiconductor device.
Claim 64
Dependent Claim
24 words
The semiconductor device according to claim 7, wherein the semiconductor device is an integrated circuit selected from a SRAM circuit and a DRAM circuit.
Claim 65
Dependent Claim
45 words
The semiconductor device according to claim 12, further comprising a main body, a camera section, an image receiving section, a manipulation switch and a display device operationally connected to constitute a TV camera, wherein the display device comprises the n-type transistor and the p-channel transistor.
Claim 66
Dependent Claim
40 words
The semiconductor device according to claim 12, further comprising a main body, two display devices and a band section operationally connected to constitute a head-mounted display, wherein each of the display devices comprises the n-channel transistor and the p-channel transistor.
Claim 67
Dependent Claim
40 words
The semiconductor device according to claim 12, further comprising a main body, a display device, manipulation switches and an antenna operationally connected to constitute a car navigation apparatus, wherein the display device comprises the n-channel transistor and the p-channel transistor.
Claim 68
Dependent Claim
47 words
The semiconductor device according to claim 12, further comprising a main body, a voice output section, a voice input section, a display device, manipulation buttons and an antenna operationally connected to constitute a cellular telephone, wherein the display device comprises the n-channel transistor and the p-channel transistor.
Claim 69
Dependent Claim
47 words
The semiconductor device according to claim 12, further comprising a main body, a display device, a voice input section, manipulation switches, a battery and an image receiving section operationally connected to constitute a video camera, wherein the display device comprises the n-channel transistor and the p-channel transistor.
Claim 70
Dependent Claim
46 words
The semiconductor device according to claim 12, further comprising a main body, a light source, a reflection-type display device, an optical system and a screen operationally connected to constitute a front projection apparatus, wherein the reflection-type display device comprises the n-channel transistor and the p-channel transistor.
Claim 71
Dependent Claim
24 words
The semiconductor device according to claim 12, wherein the semiconductor device is an integrated circuit selected from a SRAM circuit and a DRAM circuit.
Claim 72
Dependent Claim
17 words
The semiconductor device according to claim 1, wherein said device is used in an EL display device.
Claim 73
Dependent Claim
17 words
The semiconductor device according to claim 4, wherein said device is used in an EL display device.
Claim 74
Dependent Claim
17 words
The semiconductor device according to claim 5, wherein said device is used in an EL display device.
Claim 75
Dependent Claim
17 words
The semiconductor device according to claim 12, wherein said device is used in an EL display device.
Claim 76
Dependent Claim
63 words
A semiconductor device comprising: an n-type transistor comprising a source region, a drain region, a channel forming region and a low-concentration impurity region, wherein said channel forming region has a channel length of 0.01-2 μm and comprises impurity regions, each of said impurity regions extending along a direction of said channel length, and intervals between each of said impurity regions being 30-1000 Å.
Claim 77
Dependent Claim
63 words
A semiconductor device comprising: an n-type transistor comprising a source region, a drain region, a channel forming region and a low-concentration impurity region, wherein said channel forming region has a channel length of 0.01-2 μm and comprises impurity regions, each of said impurity regions extending along a direction of said channel length, and intervals between each of said impurity regions being 30-1000 Å.
Claim 78
Dependent Claim
21 words
The semiconductor device according to claim 69, wherein said impurity regions comprise an impurity selected from oxygen, nitrogen, carbon and boron.
Claim 79
Dependent Claim
17 words
The semiconductor device according to claim 69, wherein said device is used in an EL display device.
Claim 80
Dependent Claim
103 words
A semiconductor device comprising: an n-type transistor comprising a first channel forming region having a first channel length; and a p-type transistor comprising a second channel forming region having a second channel length, wherein said first channel forming region comprises first impurity regions, each of said first impurity regions extending along a direction of said first channel length, wherein said second channel forming region comprises second impurity regions, each of said second impurity regions extending along a direction of said second channel length, and intervals between each of said second impurity regions being wider than intervals between each of said first impurity regions.
Claim 81
Dependent Claim
103 words
A semiconductor device comprising: an n-type transistor comprising a first channel forming region having a first channel length; and a p-type transistor comprising a second channel forming region having a second channel length, wherein said first channel forming region comprises first impurity regions, each of said first impurity regions extending along a direction of said first channel length, wherein said second channel forming region comprises second impurity regions, each of said second impurity regions extending along a direction of said second channel length, and intervals between each of said second impurity regions being wider than intervals between each of said first impurity regions.
Claim 82
Dependent Claim
38 words
The semiconductor device according to claim 72, wherein said first impurity regions comprise an impurity selected from oxygen, nitrogen, carbon and boron, and wherein said second impurity regions comprise an impurity selected from oxygen, nitrogen, carbon and phosphorus.
Claim 83
Dependent Claim
17 words
The semiconductor device according to claim 72, wherein said device is used in an EL display device.
Claim 84
Dependent Claim
17 words
The semiconductor device according to claim 2, wherein said device is used in an EL display device.
Claim 85
Dependent Claim
17 words
The semiconductor device according to claim 6, wherein said device is used in an EL display device.
Claim 86
Dependent Claim
17 words
The semiconductor device according to claim 7, wherein said device is used in an EL display device.
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