Method for forming a capacitor structure

Claim 1

A method for forming a semiconductor device, comprising the steps of: forming a first dielectric film overlying a semiconductor device substrate; forming a first conductive film over the first dielectric film; forming a second dielectric film over the first conductive film; patterning the second conductive film to define a patterned area and an unpatterned area; removing the unpatterned area to define a portion of a post, wherein the post has a top surface that includes a remaining portion of the second conductive film, sidewalls that include a remaining portion of the second dielectric layer, and a bottom portion that includes a portion of the first conductive film formed under said remaining portion of the second dielectric layer; forming a third conductive film overlying the top surface and along the sidewalls of the post and overlying exposed surfaces adjacent the post; removing portions of the third conductive film overlying the top surface and overlying the exposed surfaces adjacent the portion of the post, wherein portions of the first conductive film overlying exposed surfaces adjacent the post are also removed and after removing portions of the third conductive film, a remaining portion of the third conductive film is disposed along sidewalls of the post and electrically connects said remaining portion of the second conductive film with a remaining portion of the first conductive film and forms at least part of a lower electrode; depositing a capacitor dielectric film over the post; and depositing an upper electrode on the capacitor dielectric film.

Claim 2

A method for forming a semiconductor device, comprising the steps of: forming a first dielectric film overlying a semiconductor device substrate; forming a first conductive film over the first dielectric film; forming a second dielectric film over the first conductive film; patterning the second conductive film to define a patterned area and an unpatterned area; removing the unpatterned area to define a portion of a post, wherein the post has a top surface that includes a remaining portion of the second conductive film, sidewalls that include a remaining portion of the second dielectric layer, and a bottom portion that includes a portion of the first conductive film formed under said remaining portion of the second dielectric layer; forming a third conductive film overlying the top surface and along the sidewalls of the post and overlying exposed surfaces adjacent the post; removing portions of the third conductive film overlying the top surface and overlying the exposed surfaces adjacent the portion of the post, wherein portions of the first conductive film overlying exposed surfaces adjacent the post are also removed and after removing portions of the third conductive film, a remaining portion of the third conductive film is disposed along sidewalls of the post and electrically connects said remaining portion of the second conductive film with a remaining portion of the first conductive film and forms at least part of a lower electrode; depositing a capacitor dielectric film over the post; and depositing an upper electrode on the capacitor dielectric film.