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Method of fabricating dielectric layer

Assignee: Vanguard International Semiconductor Corp
•
Filing: 1999-08-10
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Granted: 2000-08-15
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Expires: 2019-08-10
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Abstract

Abstract A method of fabricating a dielectric layer which is application to be used in a capacitor. A first conductive layer is provided. A nitridation step is performed on the first conductive layer, so that a nitride layer is formed on a surface of the first conductive layer. A dielectric layer with a high dielectric constant is formed, followed by a thermal treatment and an oxygen plasma treatment to terminate dangling bonds of the dielectric layer. Consequently, oxygen is distributed on a surface of the dielectric layer and bonded with dangling bonds of the dielectric layer distributed on the surface.

Inventors

  • 👤 Wong-Cheng Shih
  • 👤 Guan-Jye Peng
  • 👤 Lan-Lin Chao

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-03 23:49
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/69; H10P14/694; H10P14/6943; H10P14/69433; H10D; H10D1/00; H10D1/60; H10D1/68; H10P14/63; H10P14/6302; H10P14/6316; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/65; H10P14/6516; H10P14/6518; H10P14/6519; H10P14/6529; H10P14/6532; H10P14/6536; H10P14/6538; H10P14/6544; H10P14/692; H10P14/6938; H10P14/6939; H10P14/69393; H10D1/682; H10D1/684

Claims Analysis

Total Claims: 22
Claim 1
Independent Claim 60 words
A method of fabricating a dielectric layer applicable to be used in a capacitor, comprising: providing a first conductive layer; performing a nitridation step; forming a dielectric layer; and performing an oxygen plasma treatment to terminate dangling bonds in an interior part and on a surface part of the dielectric layer, so that oxygen is distributed on the surface part.
Claim 2
Independent Claim 60 words
A method of fabricating a dielectric layer applicable to be used in a capacitor, comprising: providing a first conductive layer; performing a nitridation step; forming a dielectric layer; and performing an oxygen plasma treatment to terminate dangling bonds in an interior part and on a surface part of the dielectric layer, so that oxygen is distributed on the surface part.
Claim 3
Dependent Claim 15 words
The method according to claim 1, wherein the first conductive layer comprises a bottom electrode.
Claim 4
Dependent Claim 15 words
The method according to claim 1, wherein the first conductive layer comprises a polysilicon layer.
Claim 5
Dependent Claim 17 words
The method according to claim 3, wherein a silicon nitride layer is formed during the nitridation step.
Claim 6
Dependent Claim 18 words
The method according to claim 4, wherein the silicon nitride layer has a thickness of about 10-20 angstroms.
Claim 7
Dependent Claim 21 words
The method according to claim 1, wherein a nitride layer is formed on the first conductive layer during the nitridation step.
Claim 8
Dependent Claim 15 words
The method according to claim 1, wherein the dielectric layer comprises a tantalum oxide layer.
Claim 9
Dependent Claim 31 words
The method according to claim 1, wherein the oxygen plasma treatment is selected from one of a direct oxygen plasma treatment, a remote oxygen plasma treatment, or a downstream oxygen treatment.
Claim 10
Dependent Claim 58 words
The method according to claim 8 wherein the remote oxygen plasma treatment is performed under the conditions comprising: an oxygen plasma with a flow rate of about 1-10 sccm; an operation temperature of about 450-800 degrees Celsius; an operation pressure of about 1-5 torrs; a power of about 2000-4000 Watt; and an operation duration for about 15-900 seconds.
Claim 11
Dependent Claim 19 words
The method according to claim 1, wherein oxygen plasma treatment can be replaced with a deep ultra-violet ozone treatment.
Claim 12
Dependent Claim 18 words
The method according to claim 1, further comprising forming a second conductive layer after the oxygen plasma treatment.
Claim 13
Dependent Claim 15 words
The method according to claim 11, wherein the second conductive layer is a top electrode.
Claim 14
Dependent Claim 16 words
The method according to claim 11, wherein the second conductive layer comprises a titanium nitride layer.
Claim 15
Dependent Claim 21 words
The method according to claim 13, wherein the titanium nitride layer is formed between a temperature of about 500-700 degree Celsius.
Claim 16
Dependent Claim 21 words
The method according to claim 11, wherein the second conductive layer is formed using ammonia and titanium chloride as gas sources.
Claim 17
Dependent Claim 25 words
The method according to claim 15, wherein a titanium oxy-nitride layer is formed at a beginning of the step for forming the second conductive layer.
Claim 18
Dependent Claim 18 words
The method according to claim 16, wherein the titanium oxy-nitride layer has a thickness of about 10 angstroms.
Claim 19
Dependent Claim 47 words
The method according to claim 11, wherein at a beginning of the step for forming the second conductive layer, gas sources used for forming the second conductive layer are reacted with the oxygen distributed on the surface part of the dielectric layer to form a barrier layer.
Claim 20
Dependent Claim 16 words
The method according to claim 1, further comprises a thermal step after forming the dielectric layer.
Claim 21
Dependent Claim 14 words
The method according to claim 19, wherein the thermal treatment includes thermal annealing step.
Claim 22
Dependent Claim 17 words
The method according to claim 1 further comprises a step of crystallization after forming the dielectric layer.

References Cited (Backward Citations)

US5907470A Cited
US6027977A Cited
US5985730A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 2003-08-15 2004-02-14 2004-08-15 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 2007-08-15 2008-02-14 2008-08-15 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 2011-08-15 2012-02-14 2012-08-15 $7700.00 Window Closed / Lapsed

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