US6100545A
Expired / Lapsed
US
⏱️ 0.0 years remaining
GaN type semiconductor device
Assignee: Toyoda Gosei Co Ltd
•
Filing: 1998-10-13
•
Granted: 2000-08-08
•
Expires: 2018-10-13
Abstract
Abstract A GaN type semiconductor layer having a new structure is provided which incorporates a substrate having surface which is opposite to a GaN type semiconductor layer and which is made of Ti.
Inventors
- 👤 Toshiaki Chiyo
- 👤 Shizuyo Noiri
- 👤 Naoki Shibata
- 👤 Jun Ito
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 19:21
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/80; H10H20/83; H10H20/832; H10H20/835; H10H20/01; H10H20/011; H10H20/013; H10H20/0133; H10H20/01335; H10H20/0137; H10H20/84; H10H20/841
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
33 words
A GaN semiconductor and/or its related material's device comprising: an AlGaInN type semiconductor layer; and a substrate having a surface which is opposite to said semiconductor layer and which is made of Ti.
Claim 2
Dependent Claim
33 words
A GaN semiconductor and/or its related material's device comprising: an AlGaInN type semiconductor layer; and a substrate having a surface which is opposite to said semiconductor layer and which is made of Ti.
Claim 3
Dependent Claim
31 words
A semiconductor device according to claim 1, wherein said substrate has a base material, and at least one of a single crystal Ti layer and a substantially single crystal Ti layer.
Claim 4
Dependent Claim
31 words
A semiconductor device according to claim 2, wherein said base material comprises at least one of the members selected from the group consisting of Si, GaP, GaAs, InP, ZnSe and ZnO.
Claim 5
Dependent Claim
30 words
A semiconductor device according to claim 1, wherein further comprising a buffer layer made of AlaInbGa1-a-bN (including a=0, b=0 or a=b=0) being interposed between said semiconductor layer and said substrate.
Claim 6
Dependent Claim
27 words
A laminated structure comprising: a GaN semiconductor layer; and a substrate having a surface which is opposite to said semiconductor layer and which is made of Ti.
Claim 7
Dependent Claim
27 words
A laminated structure comprising: a GaN semiconductor layer; and a substrate having a surface which is opposite to said semiconductor layer and which is made of Ti.
Claim 8
Dependent Claim
29 words
A laminated structure according to claim 5, wherein said substrate has a base layer, and one of a single crystal Ti layer and a substantially single crystal Ti layer.
Claim 9
Dependent Claim
31 words
A laminated structure according to claim 6, wherein said base layer comprises at least one of the members selected from the group consisting of Si, GaP, GaAs, InP, ZnSe and ZnO.
Claim 10
Dependent Claim
28 words
A laminated structure according to claim 5, further comprising a buffer layer made of AlaInbGa1-a-bN (including a=0, b=0 or a=b=0) interposed between said semiconductor layer and said substrate.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2003-08-08 | 2004-02-07 | 2004-08-08 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2007-08-08 | 2008-02-07 | 2008-08-08 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2011-08-08 | 2012-02-07 | 2012-08-08 | $7700.00 | Window Closed / Lapsed |