Abstract The invention relates to a device structure and crystal growth process for making the same, whereby single-crystal semiconductor layers are formed over metal or composite layers. The metal layers function as buried reflectors to enhance the performance of LEDs, solar cells, and photodiodes. The structure may also have application to laser diodes. The structures are made by a modification of a well-established metallic solution growth process. The lateral overgrowth process can be enhanced by imposing an electric current at the growth interface (termed liquid-phase electro-epitaxy). However, the use of an electric current is not crucial. The epitaxial lateral overgrowth technique was also applied to silicon growth on metal-masked silicon substrates.
A semiconductor device structure having a substrate and at least one semiconductor epitaxial layer to form a composite structure, the improvement being in including a buried mirror between said substrate and epitaxial layers, said buried mirror being of non-single crystalline form, said epitaxial layers being formed from epitaxial layer overgrowth to result in a single-crystal epitaxial device over said buried mirror, and said buried mirror is a metal layer between a pair of adjacent epitaxial layers.
Claim 2
Dependent Claim
76 words
A semiconductor device structure having a substrate and at least one semiconductor epitaxial layer to form a composite structure, the improvement being in including a buried mirror between said substrate and epitaxial layers, said buried mirror being of non-single crystalline form, said epitaxial layers being formed from epitaxial layer overgrowth to result in a single-crystal epitaxial device over said buried mirror, and said buried mirror is a metal layer between a pair of adjacent epitaxial layers.