US4796274A
Expired / Lapsed
US
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Semiconductor device with distributed bragg reflector
Assignee: KDDI Corp
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Filing: 1987-02-12
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Granted: 1989-01-03
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Expires: 2007-02-12
Abstract
Abstract A semiconductor device with a distributed Bragg reflector is disclosed, in which periodic corrugations are formed between two semiconductor layers along the direction of travel of light. In accordance with the present invention, the periodic corrugations are formed by grid-like layers of a refractory material. The refractory material is an insulator, a refractory metal or a laminate member of an insulator and a refractory metal.
Inventors
- 👤 Shigeyuki Akiba
- 👤 Masashi Usami
- 👤 Yukio Noda
- 👤 Masatoshi Suzuki
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 08:26
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/10; H01S5/12; H01S5/1228; H01S5/125
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
88 words
A semiconductor device comprising, a substrate, two semiconductor layers on the substrate including a light waveguide layer, a distributed Bragg reflector comprising a diffraction grating having periodic corrugations between the two semiconductor layers along a direction of travel of light in the active light waveguide layer, said periodic corrugations comprising grid-like layers of a refractory material having a small width thereof viewed perpendicularly to the direction of travel of light in comparison with that of the substrate, and electrodes for applying an electric field to the waveguide layer.
Claim 2
Dependent Claim
88 words
A semiconductor device comprising, a substrate, two semiconductor layers on the substrate including a light waveguide layer, a distributed Bragg reflector comprising a diffraction grating having periodic corrugations between the two semiconductor layers along a direction of travel of light in the active light waveguide layer, said periodic corrugations comprising grid-like layers of a refractory material having a small width thereof viewed perpendicularly to the direction of travel of light in comparison with that of the substrate, and electrodes for applying an electric field to the waveguide layer.
Claim 3
Dependent Claim
21 words
A semiconductor device according to claim 1, in which said grid-like layers are embedded in one of the two semiconductor layers.
Claim 4
Dependent Claim
26 words
A semiconductor device according to claim 2, in which said one of the two semiconductor layers is a layer other than said active light waveguide layer.
Claim 5
Dependent Claim
16 words
A semiconductor device according to claim 3, in which said other layer is an expitaxial layer.
Claim 6
Dependent Claim
25 words
A semiconductor device according to claim 3, in which the refractive index of the corrugations is smaller than the refractive indexes of the semiconductor layers.
Claim 7
Dependent Claim
35 words
A semiconductor device according to claim 5, in which the refractive index of the corrugations periodically varies in the direction of travel of light effectively, whereby the distributed Bragg reflector functions as an optical filter.
Claim 8
Dependent Claim
49 words
A semiconductor device according to claim 6, including means for varying the refractive index of the active light waveguide layer by electro-optic effect to control the reflection wavelength of the filter, and the last-mentioned means comprising the electrodes for applying an electric field to the active light waveguide layer.
Claim 9
Dependent Claim
15 words
A semiconductor device according to claim 1, in which said refractory material is an insulator.
Claim 10
Dependent Claim
16 words
A semiconductor device according to claim 1, in which said refractory material is a refractory metal.
Claim 11
Dependent Claim
22 words
A semiconductor device according to claim 1, in which said refractory material is a laminate of an insulator and a refractory metal.
Claim 12
Dependent Claim
105 words
A distributed feedback laser comprising, a substrate, an n-type semiconductor layer on the substrate, a semiconductor active layer transmitting light and a p-type semiconductor buffer layer on the n-type semiconductor layer, a diffraction grating having grid-shaped corrugations along a direction of travel of light in the active layer disposed on the buffer layer and made of an insulator refractory material, a p-type semiconductor layer on the corrugations and a p-type semiconductor cap layer, and electrodes for injecting a current into the active layer for developing periodic variations in gain and periodic variations in the refractive index of the active layer ensuring stable single wave oscillation.
Claim 13
Dependent Claim
105 words
A distributed feedback laser comprising, a substrate, an n-type semiconductor layer on the substrate, a semiconductor active layer transmitting light and a p-type semiconductor buffer layer on the n-type semiconductor layer, a diffraction grating having grid-shaped corrugations along a direction of travel of light in the active layer disposed on the buffer layer and made of an insulator refractory material, a p-type semiconductor layer on the corrugations and a p-type semiconductor cap layer, and electrodes for injecting a current into the active layer for developing periodic variations in gain and periodic variations in the refractive index of the active layer ensuring stable single wave oscillation.
References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1992-01-03 | 1992-07-04 | 1993-01-03 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1996-01-03 | 1996-07-04 | 1997-01-03 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2000-01-03 | 2000-07-04 | 2001-01-03 | $7700.00 | Window Closed / Lapsed |