Patent US6100187A successfully refreshed from Google Patents.
US6100187A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of producing a barrier layer in a semiconductor body
Assignee: Polaris Innovations Ltd
•
Filing: 1998-06-29
•
Granted: 2000-08-08
•
Expires: 2018-06-29
Abstract
Abstract A barrier layer is formed on the contact plug of the semiconductor body. The barrier layer prevents oxidation of the contact plug. The barrier layer is produced by chemically reacting a prestructured metallic transition material with one or more reaction partners.
Inventors
- 👤 Frank Hintermaier
- 👤 Carlos Mazure-Espejo
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 08:51
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/032; H10W20/038; H10D; H10D1/00; H10D1/60; H10D1/68; H10D1/692; H10P; H10P14/00; H10P14/40; H10P14/42; H10P14/43; H10P50/00; H10P50/20; H10P50/26; H10P50/264; H10P50/266
Claims Analysis
Total Claims: 19
Claim 1
Independent Claim
77 words
A semiconductor production process, which comprises: providing a semiconductor body with a main face and a contact plug extending in the semiconductor body and substantially to the main face thereof; producing a barrier layer on the contact plug by chemically reacting a prestructured metallic transition material with at least one reaction partner; and prestructuring the transition material by depositing a layer of the transition material on the semiconductor body and subsequently structuring the layer of transition material.
Claim 2
Dependent Claim
77 words
A semiconductor production process, which comprises: providing a semiconductor body with a main face and a contact plug extending in the semiconductor body and substantially to the main face thereof; producing a barrier layer on the contact plug by chemically reacting a prestructured metallic transition material with at least one reaction partner; and prestructuring the transition material by depositing a layer of the transition material on the semiconductor body and subsequently structuring the layer of transition material.
Claim 3
Dependent Claim
28 words
The process according to claim 1, wherein the step of prestructuring comprises an etching process selected from the group consisting of chemical/physical gas phase etching and dry etching.
Claim 4
Dependent Claim
79 words
A semiconductor production process, which comprises: providing a semiconductor body with a main face and a contact plug extending in the semiconductor body and substantially to the main face thereof; producing a barrier layer on the contact plug by chemically reacting a prestructured metallic transition material with at least one reaction partner; and prestructuring the transition material with a selective CVD process wherein the metallic transition material is deposited, locally limited, on the contact plugs in the semiconductor body.
Claim 5
Dependent Claim
79 words
A semiconductor production process, which comprises: providing a semiconductor body with a main face and a contact plug extending in the semiconductor body and substantially to the main face thereof; producing a barrier layer on the contact plug by chemically reacting a prestructured metallic transition material with at least one reaction partner; and prestructuring the transition material with a selective CVD process wherein the metallic transition material is deposited, locally limited, on the contact plugs in the semiconductor body.
Claim 6
Dependent Claim
57 words
A semiconductor production process, which comprises: providing a semiconductor body with a main face and a contact plug extending in the semiconductor body and substantially to the main face thereof; and producing a barrier layer on the contact plug by chemically reacting a prestructured metallic transition material with at least one reaction partner being a non-metallic hydrocarbon.
Claim 7
Dependent Claim
57 words
A semiconductor production process, which comprises: providing a semiconductor body with a main face and a contact plug extending in the semiconductor body and substantially to the main face thereof; and producing a barrier layer on the contact plug by chemically reacting a prestructured metallic transition material with at least one reaction partner being a non-metallic hydrocarbon.
Claim 8
Dependent Claim
84 words
A semiconductor production process, which comprises: providing a semiconductor body with a main face and a contact plug extending in the semiconductor body and substantially to the main face thereof; and producing a barrier layer on the contact plug by chemically reacting a prestructured metallic transition material with at least one reaction partner by thermally treating the metallic transition material in ammonia at a temperature of about 400° to 700° C. and forming a nitride transition metal layer barrier layer as an oxygen barrier.
Claim 9
Dependent Claim
84 words
A semiconductor production process, which comprises: providing a semiconductor body with a main face and a contact plug extending in the semiconductor body and substantially to the main face thereof; and producing a barrier layer on the contact plug by chemically reacting a prestructured metallic transition material with at least one reaction partner by thermally treating the metallic transition material in ammonia at a temperature of about 400° to 700° C. and forming a nitride transition metal layer barrier layer as an oxygen barrier.
Claim 10
Dependent Claim
70 words
A semiconductor production process, which comprises: providing a semiconductor body with a main face and a contact plug extending in the semiconductor body and substantially to the main face thereof; and producing a barrier layer on the contact plug by chemically reacting a prestructured metallic transition material with at least one reaction partner, the barrier layer being a carbide barrier layer formed by reacting alkanes with the metallic transition material.
Claim 11
Dependent Claim
70 words
A semiconductor production process, which comprises: providing a semiconductor body with a main face and a contact plug extending in the semiconductor body and substantially to the main face thereof; and producing a barrier layer on the contact plug by chemically reacting a prestructured metallic transition material with at least one reaction partner, the barrier layer being a carbide barrier layer formed by reacting alkanes with the metallic transition material.
Claim 12
Dependent Claim
28 words
The process according to claim 6, which comprises forming the carbide barrier layer by thermally treating tungsten at a temperature of up to about 1000° C. with methane.
Claim 13
Dependent Claim
17 words
The process according to claim 7, wherein the thermally treating step is performed for about 30 minutes.
Claim 14
Dependent Claim
70 words
A semiconductor production process, which comprises: providing a semiconductor body with a main face and a contact plug extending in the semiconductor body and substantially to the main face thereof; and producing a barrier layer on the contact plug by chemically reacting a prestructured metallic transition material with at least one reaction partner, the barrier layer being a phosphide barrier layer formed by converting the metallic transition material with phosphanes.
Claim 15
Dependent Claim
70 words
A semiconductor production process, which comprises: providing a semiconductor body with a main face and a contact plug extending in the semiconductor body and substantially to the main face thereof; and producing a barrier layer on the contact plug by chemically reacting a prestructured metallic transition material with at least one reaction partner, the barrier layer being a phosphide barrier layer formed by converting the metallic transition material with phosphanes.
Claim 16
Dependent Claim
72 words
A semiconductor production process, which comprises: providing a semiconductor body with a main face and a contact plug extending in the semiconductor body and substantially to the main face thereof; and producing a barrier layer on the contact plug by chemically reacting a prestructured metallic transition material with at least one reaction partner, the barrier layer comprising transition metal borides formed by reacting B 2 H 6 with the metallic transition material.
Claim 17
Dependent Claim
72 words
A semiconductor production process, which comprises: providing a semiconductor body with a main face and a contact plug extending in the semiconductor body and substantially to the main face thereof; and producing a barrier layer on the contact plug by chemically reacting a prestructured metallic transition material with at least one reaction partner, the barrier layer comprising transition metal borides formed by reacting B 2 H 6 with the metallic transition material.
Claim 18
Dependent Claim
75 words
A semiconductor production process, which comprises: providing a semiconductor body with a main face and a contact plug extending in the semiconductor body and substantially to the main face thereof; producing a barrier layer on the contact plug by chemically reacting a prestructured metallic transition material with at least one reaction partner; and forming a storage capacitor with a dielectric layer directly in contact with the barrier layer and without an electrode layer in between.
Claim 19
Dependent Claim
75 words
A semiconductor production process, which comprises: providing a semiconductor body with a main face and a contact plug extending in the semiconductor body and substantially to the main face thereof; producing a barrier layer on the contact plug by chemically reacting a prestructured metallic transition material with at least one reaction partner; and forming a storage capacitor with a dielectric layer directly in contact with the barrier layer and without an electrode layer in between.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2003-08-08 | 2004-02-07 | 2004-08-08 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2007-08-08 | 2008-02-07 | 2008-08-08 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2011-08-08 | 2012-02-07 | 2012-08-08 | $7700.00 | Window Closed / Lapsed |