US6096648A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Copper/low dielectric interconnect formation with reduced electromigration
Assignee: GlobalFoundries Inc
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Filing: 1999-01-26
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Granted: 2000-08-01
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Expires: 2019-01-26
Abstract
Abstract A method of metallizing a semiconductor chip with copper including an inlaid low dielectric constant layer. The method includes the step of depositing a barrier layer on the surface of the semiconductor chip. Next, a copper seed layer is deposited on the barrier layer, and then the copper seed layer is annealed. Microlithography is then performed on the semiconductor chip to form a plurality of wiring line paths with a patterned photoresist layer. After the wiring line paths are formed a copper conductive layer is electroplated to the surface of the semiconductor chip. Next, the patterned photoresist layer is stripped off of the surface of the semiconductor chip. In addition, portions of the barrier layer and the copper seed layer that were covered by the patterned photoresist layer are also removed. A low dielectric constant layer is then deposited on the semiconductor chip to fill the gaps between the newly created copper conductive lines.
Inventors
- 👤 Sergey Lopatin
- 👤 Takeshi Nogami
- 👤 Robin W. Cheung
- 👤 Christy Mei-Chu Woo
- 👤 Guarionex Morales
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 01:48
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/064; H10W20/063; H10W20/071; H10W20/092; H10W20/098
Claims Analysis
Total Claims: 21
Claim 1
Independent Claim
93 words
A method of metallizing a semiconductor chip, comprising the steps of: depositing a barrier layer and a copper seed layer on the semiconductor chip; annealing the semiconductor chip after the copper seed layer is deposited; using microlithography to form a patterned photoresist layer on the copper seed layer; electroplating a copper conductive layer on the semiconductor chip; stripping off the patterned photoresist layer and portions of the barrier layer and the copper seed layer that were located beneath the patterned photoresist layer; and depositing a low dielectric constant layer on the semiconductor chip.
Claim 2
Independent Claim
93 words
A method of metallizing a semiconductor chip, comprising the steps of: depositing a barrier layer and a copper seed layer on the semiconductor chip; annealing the semiconductor chip after the copper seed layer is deposited; using microlithography to form a patterned photoresist layer on the copper seed layer; electroplating a copper conductive layer on the semiconductor chip; stripping off the patterned photoresist layer and portions of the barrier layer and the copper seed layer that were located beneath the patterned photoresist layer; and depositing a low dielectric constant layer on the semiconductor chip.
Claim 3
Dependent Claim
16 words
The method of claim 1, further including the step of planarizing the low dielectric constant layer.
Claim 4
Dependent Claim
19 words
The method of claim 1, further including the step of implanting a metal impurity in the copper conductive layer.
Claim 5
Dependent Claim
22 words
The method of claim 3, wherein said metal impurity may be selected from the group consisting of magnesium, boron, tin and zirconium.
Claim 6
Dependent Claim
15 words
The method of claim 3, wherein said implant dose is about 1×10E16 atom/cm 2 .
Claim 7
Dependent Claim
20 words
The method of claim 1, further including the step of depositing a photoresist layer on the low dielectric constant layer.
Claim 8
Independent Claim
123 words
A method of metallizing a semiconductor chip with copper, comprising the steps of: depositing a barrier layer on the surface of the semiconductor chip; depositing a copper seed layer on the barrier layer; annealing the semiconductor chip after the copper seed layer is deposited; performing microlithography on the semiconductor chip to form a plurality of wiring paths with a patterned photoresist layer; electroplating a copper conductive layer on the semiconductor chip, thereby filling the plurality of wiring paths with copper; stripping off the patterned photoresist layer from the surface of the semiconductor chip; removing portions of the barrier layer and the copper seed layer which were covered by the patterned photoresist layer; and depositing a low dielectric constant layer on the semiconductor chip.
Claim 9
Independent Claim
123 words
A method of metallizing a semiconductor chip with copper, comprising the steps of: depositing a barrier layer on the surface of the semiconductor chip; depositing a copper seed layer on the barrier layer; annealing the semiconductor chip after the copper seed layer is deposited; performing microlithography on the semiconductor chip to form a plurality of wiring paths with a patterned photoresist layer; electroplating a copper conductive layer on the semiconductor chip, thereby filling the plurality of wiring paths with copper; stripping off the patterned photoresist layer from the surface of the semiconductor chip; removing portions of the barrier layer and the copper seed layer which were covered by the patterned photoresist layer; and depositing a low dielectric constant layer on the semiconductor chip.
Claim 10
Dependent Claim
16 words
The method of claim 7, further including the step of planarizing the low dielectric constant layer.
Claim 11
Dependent Claim
19 words
The method of claim 7, further including the step of implanting a metal impurity in the copper conductive layer.
Claim 12
Dependent Claim
22 words
The method of claim 9, wherein said metal impurity may be selected from the group consisting of magnesium, boron, tin and zirconium.
Claim 13
Dependent Claim
15 words
The method of claim 9, wherein said implant dose is about 1×10E16 atoms/cm 2 .
Claim 14
Dependent Claim
20 words
The method of claim 7, further including the step of depositing a photoresist layer on the low dielectric constant layer.
Claim 15
Independent Claim
201 words
A method of metallizing a semiconductor chip with copper, comprising the steps of: depositing a first low dielectric constant layer on a semiconductor chip, said semiconductor chip including a substrate layer, a dielectric layer and a plurality of integrated circuit components; etching at least one via opening in the first low dielectric constant layer to form passages to said integrated circuit components; depositing a barrier layer on the first low dielectric layer so that said barrier layer is deposited in said via openings; depositing a copper seed layer on the barrier layer; annealing the semiconductor chip after the copper seed layer is deposited; performing microlithography on the semiconductor chip to form a plurality of wiring line paths with a patterned photoresist layer; electroplating a copper conductive layer on the surface of the semiconductor chip, thereby filling the vias and the plurality of wiring line paths with copper; stripping off the patterned photoresist layer from the surface of the semiconductor chip; removing portions of the barrier layer and the copper seed layer that were covered by the patterned photoresist layer; and depositing a second low dielectric constant layer on the semiconductor chip thereby filling the gaps between said copper wiring path lines.
Claim 16
Independent Claim
201 words
A method of metallizing a semiconductor chip with copper, comprising the steps of: depositing a first low dielectric constant layer on a semiconductor chip, said semiconductor chip including a substrate layer, a dielectric layer and a plurality of integrated circuit components; etching at least one via opening in the first low dielectric constant layer to form passages to said integrated circuit components; depositing a barrier layer on the first low dielectric layer so that said barrier layer is deposited in said via openings; depositing a copper seed layer on the barrier layer; annealing the semiconductor chip after the copper seed layer is deposited; performing microlithography on the semiconductor chip to form a plurality of wiring line paths with a patterned photoresist layer; electroplating a copper conductive layer on the surface of the semiconductor chip, thereby filling the vias and the plurality of wiring line paths with copper; stripping off the patterned photoresist layer from the surface of the semiconductor chip; removing portions of the barrier layer and the copper seed layer that were covered by the patterned photoresist layer; and depositing a second low dielectric constant layer on the semiconductor chip thereby filling the gaps between said copper wiring path lines.
Claim 17
Dependent Claim
17 words
The method of claim 13, further including the step of planarizing the second low dielectric constant layer.
Claim 18
Dependent Claim
19 words
The method of claim 13, further including the step of implanting a metal impurity in the copper conductive layer.
Claim 19
Dependent Claim
22 words
The method of claim 15, wherein said metal impurity may be selected from the group consisting of magnesium, boron, tin and zirconium.
Claim 20
Dependent Claim
15 words
The method of claim 15, wherein said implant dose is about 1×10E16 atoms/cm 2 .
Claim 21
Dependent Claim
21 words
The method of claim 13, further including the step of depositing a photoresist layer on the second low dielectric constant layer.
References Cited (Backward Citations)
US5071518A
Cited
US5969422A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2003-08-01 | 2004-01-31 | 2004-08-01 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2007-08-01 | 2008-01-31 | 2008-08-01 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2011-08-01 | 2012-01-31 | 2012-08-01 | $7700.00 | Window Closed / Lapsed |