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US6096614A
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Method to fabricate deep sub-μm CMOSFETS
Assignee: Taiwan Semiconductor Manufacturing Co TSMC Ltd
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Filing: 1998-02-06
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Granted: 2000-08-01
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Expires: 2018-02-06
Abstract
Abstract The method of the present invention is a method to fabricate a MOS device without boron penetration. After growing a gate oxide layer, a thin stacked-amorphous-silicon layer (SAS) is deposited over the oxide layer. Subsequently, a lightly nitrogen ion is implanted into the stacked-amorphous silicon layer. The stacked-amorphous silicon layer is patterned to define a gate structure. Then, a light doped ion implantation is performed to dope ions through the gate oxide layer into the substrate to form lightly doped source and drain regions. A dielectric layer is formed over the gate structure and the gate oxide layer, and the dielectric layer is etched to form sidewall spacers. Next, a second ion implantation is performed to dope ions into the substrate to form source and drain. Finally, a thermal annealing is performed on the stacked-amorphous silicon gate and the substrate. The nitrogen ions in the stacked-amorphous silicon gate are segregated into the gate oxide layer to act as a diffusive barrier, the stacked-amorphous silicon gate being convert into ploy silicon gate and thereby forming shallow source and drain junction in the substrate.
Inventors
- 👤 Shye-Lin Wu
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 02:54
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/01; H10D64/013; H10D64/01302; H10D64/01332; H10D64/01336; H10D64/01342; H10D64/01338; H10D64/01344; H10D64/60; H10D64/66; H10D64/68; H10D64/693; H10D84/00; H10D84/01; H10D84/0123; H10D84/0126; H10D84/0165; H10D84/0172; H10D84/0177; H10D84/02; H10D84/03; H10D84/038
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
268 words
A method for fabricating a metal oxide semiconductor field effect transistor in a semiconductor substrate, said method comprising the steps of: forming a gate oxide layer on said substrate; forming a first amorphous silicon layer over said gate oxide layer; forming a second amorphous silicon layer over said first silicon layer; forming a third amorphous silicon layer over said second silicon layer, wherein said first amorphous silicon layer, said second amorphous silicon layer, and said third amorphous silicon layer together act as a stacked-amorphous silicon layer; performing diffusion barrier nitrogen ion implantation in a dosage between 1×10 12 and 4×10 15 cm -2 into said stacked-amorphous gate and said substrate; patterning said stacked-amorphous silicon layer to define a gate structure; performing a first ion implantation to dope ions through said gate oxide layer into said substrate, thereby forming first doped ion regions to serve as lightly doped source and drain of said transistor; forming a dielectric layer over said gate structure and said gate oxide layer; etching said dielectric layer to form side-wall spacers; performing a second ion implantation to dope ions into said substrate, thereby forming second doped ion regions next to said first doped ion regions to serve as source and drain of said transistor; and performing a thermal annealing on said stacked-amorphous silicon gate and said substrate, wherein said diffusion barrier ion in said stacked-amorphous silicon gate being segregated between said stacked-amorphous silicon layer and said oxide layer to act as a diffusion barrier, said stacked-amorphous silicon gate being convert into poly silicon gate and thereby forming shallow source and drain junction in said substrate.
Claim 2
Independent Claim
268 words
A method for fabricating a metal oxide semiconductor field effect transistor in a semiconductor substrate, said method comprising the steps of: forming a gate oxide layer on said substrate; forming a first amorphous silicon layer over said gate oxide layer; forming a second amorphous silicon layer over said first silicon layer; forming a third amorphous silicon layer over said second silicon layer, wherein said first amorphous silicon layer, said second amorphous silicon layer, and said third amorphous silicon layer together act as a stacked-amorphous silicon layer; performing diffusion barrier nitrogen ion implantation in a dosage between 1×10 12 and 4×10 15 cm -2 into said stacked-amorphous gate and said substrate; patterning said stacked-amorphous silicon layer to define a gate structure; performing a first ion implantation to dope ions through said gate oxide layer into said substrate, thereby forming first doped ion regions to serve as lightly doped source and drain of said transistor; forming a dielectric layer over said gate structure and said gate oxide layer; etching said dielectric layer to form side-wall spacers; performing a second ion implantation to dope ions into said substrate, thereby forming second doped ion regions next to said first doped ion regions to serve as source and drain of said transistor; and performing a thermal annealing on said stacked-amorphous silicon gate and said substrate, wherein said diffusion barrier ion in said stacked-amorphous silicon gate being segregated between said stacked-amorphous silicon layer and said oxide layer to act as a diffusion barrier, said stacked-amorphous silicon gate being convert into poly silicon gate and thereby forming shallow source and drain junction in said substrate.
Claim 3
Dependent Claim
19 words
The method of claim 1, wherein said first amorphous silicon layer have a thickness about 200 to 1000 Angstroms.
Claim 4
Dependent Claim
19 words
The method of claim 1, wherein said second amorphous silicon layer have a thickness about 200 to 1000 Angstroms.
Claim 5
Dependent Claim
19 words
The method of claim 1, wherein said third amorphous silicon layer have a thickness about 200 to 1000 Angstroms.
Claim 6
Dependent Claim
21 words
The method of claim 1, wherein said thermal annealing is performed at temperature about 700 to 1050 Centigrade for 0.1-60 minutes.
Claim 7
Independent Claim
269 words
A method for fabricating a metal oxide semiconductor field effect transistor in a semiconductor substrate, said method comprising the steps of: forming a gate oxide layer on said substrate; forming a first amorphous silicon layer over said gate oxide layer; forming a second amorphous silicon layer over said first silicon layer; forming a third amorphous silicon layer over said second silicon layer, wherein said first amorphous silicon layer, said second amorphous silicon layer, and said third amorphous silicon layer together act as a stacked-amorphous silicon layer; pattering said stacked-amorphous silicon layer to define a stacked-amorphous gate structure; performing a first ion implantation to dope ions through said gate oxide layer into said substrate, thereby forming first doped ion regions to serve as lightly doped source and drain of said transistor; forming a dielectric layer over said gate structure and said gate oxide layer; etching said dielectric layer to form side-wall spacers; performing diffusion barrier nitrogen ion implantation in a dosage between 1×10 12 and 4×10 15 cm -2 into said stacked-amorphous gate and said substrate; performing a second ion implantation to dope ions into said substrate, thereby forming second doped ion regions next to said first doped ion regions to serve as source and drain of said transistor; and performing a thermal annealing on said stacked-amorphous silicon gate and said substrate, wherein said diffusion barrier ion in said stacked-amorphous silicon gate being segregated between said stacked-amorphous silicon layer and said oxide layer to act as a diffusion barrier, said stacked-amorphous silicon gate being convert into poly silicon gate and thereby forming shallow source and drain junction in said substrate.
Claim 8
Independent Claim
269 words
A method for fabricating a metal oxide semiconductor field effect transistor in a semiconductor substrate, said method comprising the steps of: forming a gate oxide layer on said substrate; forming a first amorphous silicon layer over said gate oxide layer; forming a second amorphous silicon layer over said first silicon layer; forming a third amorphous silicon layer over said second silicon layer, wherein said first amorphous silicon layer, said second amorphous silicon layer, and said third amorphous silicon layer together act as a stacked-amorphous silicon layer; pattering said stacked-amorphous silicon layer to define a stacked-amorphous gate structure; performing a first ion implantation to dope ions through said gate oxide layer into said substrate, thereby forming first doped ion regions to serve as lightly doped source and drain of said transistor; forming a dielectric layer over said gate structure and said gate oxide layer; etching said dielectric layer to form side-wall spacers; performing diffusion barrier nitrogen ion implantation in a dosage between 1×10 12 and 4×10 15 cm -2 into said stacked-amorphous gate and said substrate; performing a second ion implantation to dope ions into said substrate, thereby forming second doped ion regions next to said first doped ion regions to serve as source and drain of said transistor; and performing a thermal annealing on said stacked-amorphous silicon gate and said substrate, wherein said diffusion barrier ion in said stacked-amorphous silicon gate being segregated between said stacked-amorphous silicon layer and said oxide layer to act as a diffusion barrier, said stacked-amorphous silicon gate being convert into poly silicon gate and thereby forming shallow source and drain junction in said substrate.
Claim 9
Dependent Claim
19 words
The method of claim 6, wherein said first amorphous silicon layer have a thickness about 200 to 1000 Angstroms.
Claim 10
Dependent Claim
19 words
The method of claim 6, wherein said second amorphous silicon layer have a thickness about 200 to 1000 Angstroms.
Claim 11
Dependent Claim
19 words
The method of claim 6, wherein said third amorphous silicon layer have a thickness about 200 to 1000 Angstroms.
Claim 12
Dependent Claim
21 words
The method of claim 6, wherein said thermal annealing is performed at temperature about 700 to 1050 Centigrade for 0.1-60 minutes.
References Cited (Backward Citations)
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