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US6093944A
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Dielectric materials of amorphous compositions of TI-O2 doped with rare earth elements and devices employing same
Assignee: Nokia of America Corp
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Filing: 1998-06-04
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Granted: 2000-07-25
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Expires: 2018-06-04
Abstract
Abstract A dielectric film useful for a capacitor in a DRAM device comprises an amorphous composition of Ti 1-y M y O x , where y is approximately in the range 0.01 to 0.50, x is approximately 1.0 to 2.0, and M is a lanthanide rare earth element and advantageously, selected from the group of neodymium (Nd), terbium (Tb) and dysprosium (Dy). The concentration of dopants in the a-TiO 2 film is preferably from 5 to 50 at. % and more preferably from 10 to 30 at. %. The inventive dielectric materials have a high dielectric constant of greater than 30 and figure of merit of greater than 9.0 μC/cm 2 .
Inventors
- 👤 Robert Bruce VanDover
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 01:10
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/69; H10P14/692; H10P14/6938; H10P14/69398; H10D; H10D1/00; H10D1/60; H10D1/68; H10D1/682; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6329; H10P14/6334; H10P14/6939; H10P14/69394; H10P14/69396; H10P14/69397
Claims Analysis
Total Claims: 20
Claim 1
Independent Claim
52 words
An article including a dielectric film comprising an amorphous composition of Ti--O 2 doped with a lanthanide rare earth element in which the lanthanide rare earth element is selected from the group of cerium (Ce), neodymium (Nd), terbium (Th), dysprosium (Dy), holmium (Ho), erbium (Er), thulium (Tm), ytterbium (Yb), and lutetium (Lu).
Claim 2
Dependent Claim
52 words
An article including a dielectric film comprising an amorphous composition of Ti--O 2 doped with a lanthanide rare earth element in which the lanthanide rare earth element is selected from the group of cerium (Ce), neodymium (Nd), terbium (Th), dysprosium (Dy), holmium (Ho), erbium (Er), thulium (Tm), ytterbium (Yb), and lutetium (Lu).
Claim 3
Dependent Claim
40 words
An article including a dielectric film comprising an amorphous composition of Ti--O 2 doped with a lanthanide rare earth element in which the lanthanide rare earth element is selected from the group of neodymium (Nd), terbium (Tb), and dysprosium (Dy).
Claim 4
Dependent Claim
40 words
An article including a dielectric film comprising an amorphous composition of Ti--O 2 doped with a lanthanide rare earth element in which the lanthanide rare earth element is selected from the group of neodymium (Nd), terbium (Tb), and dysprosium (Dy).
Claim 5
Dependent Claim
20 words
The article of claim 1, wherein the concentration of dopants is from 5 to 50 atomic percent dopants to titanium.
Claim 6
Dependent Claim
20 words
The article of claim 3, wherein the concentration of dopants is from 10 to 30 atomic percent dopants to titanium.
Claim 7
Dependent Claim
53 words
An article including a dielectric film comprising an amorphous composition of Ti 1-y M y O x , where y is approximately in the range 0.01 to 0.50, x is approximately 1.0 to 2.0, and M is a rare earth element selected from the group of neodymium (Nd), terbium (Tb), and dysprosium (Dy).
Claim 8
Dependent Claim
53 words
An article including a dielectric film comprising an amorphous composition of Ti 1-y M y O x , where y is approximately in the range 0.01 to 0.50, x is approximately 1.0 to 2.0, and M is a rare earth element selected from the group of neodymium (Nd), terbium (Tb), and dysprosium (Dy).
Claim 9
Dependent Claim
34 words
The article of claim 5, in which the dielectric constant of the composition measured at 10 kHz is greater than 45 and the figure of merit is greater than about 13.0 μC/cm 2 .
Claim 10
Dependent Claim
36 words
An article comprising a capacitor having a pair of electrodes with a dielectric film disposed between the electrodes, wherein the dielectric film comprises an amorphous composition of Ti--O 2 doped with a lanthanide rare earth element.
Claim 11
Dependent Claim
36 words
An article comprising a capacitor having a pair of electrodes with a dielectric film disposed between the electrodes, wherein the dielectric film comprises an amorphous composition of Ti--O 2 doped with a lanthanide rare earth element.
Claim 12
Dependent Claim
21 words
The article of claim 5, comprising a capacitor having a pair of electrodes with the dielectric film disposed between the electrodes.
Claim 13
Dependent Claim
35 words
An article comprising a MOSFET device with a dielectric film comprising a gate dielectric for the MOSFET, wherein the dielectric film comprises an amorphous composition of Ti--O 2 doped with a lanthanide rare earth element.
Claim 14
Dependent Claim
35 words
An article comprising a MOSFET device with a dielectric film comprising a gate dielectric for the MOSFET, wherein the dielectric film comprises an amorphous composition of Ti--O 2 doped with a lanthanide rare earth element.
Claim 15
Dependent Claim
20 words
The article of claim 5, comprising a MOSFET device with the dielectric film comprising a gate dielectric for the MOSFET.
Claim 16
Dependent Claim
32 words
An article comprising a memory device having a field effect transistor and a capacitor, wherein the dielectric film comprises an amorphous composition of Ti--O 2 doped with a lanthanide rare earth element.
Claim 17
Dependent Claim
32 words
An article comprising a memory device having a field effect transistor and a capacitor, wherein the dielectric film comprises an amorphous composition of Ti--O 2 doped with a lanthanide rare earth element.
Claim 18
Dependent Claim
9 words
The article of claim 11, comprising a DRAM device.
Claim 19
Dependent Claim
52 words
The article of claim 11, in which the field effect transistor has a gate dielectric and the capacitor comprises a pair of electrodes and disposed between the electrodes a layer of dielectric material, in which at least one of the gate dielectric or the layer of dielectric material comprises the amorphous composition.
Claim 20
Dependent Claim
57 words
The article of claim 5 comprising a memory device having a field effect transistor with a gate dielectric and a capacitor, the capacitor comprising a pair of electrodes and disposed between the electrodes a layer of dielectric material, in which at least one of the gate dielectric or the layer of dielectric material comprises the amorphous composition.
References Cited (Backward Citations)
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 2003-07-25 | 2004-01-24 | 2004-07-25 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2007-07-25 | 2008-01-24 | 2008-07-25 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2011-07-25 | 2012-01-24 | 2012-07-25 | $7700.00 | Window Closed / Lapsed |