US6091286A
Expired / Lapsed
US
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Fully integrated reference circuit having controlled temperature dependence
Assignee: NXP BV
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Filing: 1997-06-16
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Granted: 2000-07-18
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Expires: 2017-06-16
Abstract
Abstract Mobility in an FET is used as a time standard to develop a resistance (or a transconductance or a current) reference which may be fully integrated and which is temperature stable to an arbitrary desired accuracy (or which varies with temperature in a desired fashion). The large temperature dependence of mobility is compensated (or adjusted to a desired variation characteristic) by applying a gate bias voltage having a predetermined variation in value with respect to temperature. In one embodiment the bias voltage of the FET is given a temperature dependence which results in the drain current of the FET being substantially constant with respect to temperature. This current is then used to charge or discharge a capacitor, yielding a precise R-C product which may be implemented fully in integrated form.
Inventors
- 👤 Robert A. Blauschild
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 21:57
CPC Classifications
G; G05; G05F; G05F3/00; G05F3/02; G05F3/08; G05F3/10; G05F3/16; G05F3/20; G05F3/24; G05F3/242; G05F3/245
Claims Analysis
Total Claims: 15
Claim 1
Independent Claim
265 words
A circuit for producing an output reference current having an arbitrary predetermined temperature dependence, comprising: a first field effect transistor (FET) having a gate, a source, and a drain; a second field effect transistor having a gate, a source, and a drain, said first FET source and said second FET source being commonly connected, said first FET having a threshold voltage, a bias source, operably coupled to the drain, gate and source of the second FET, that forces the voltage between the gate and the source of the second FET to be substantially equal to the threshold voltage of the first FET; and a temperature dependent current source that provides a temperature dependent current through a first resistor to produce a temperature dependent voltage; the gate of the first FET being operably coupled to the gate of the second FET through the first resistor so that the voltage between the gate and the source of the first FET is equal to a sum of the second FET's gate to source voltage plus the temperature dependent voltage, and producing the output reference current at the drain of the first FET, a second resistor coupled between the first resistor and the sources of the first and second FETs, said temperature dependent current source including: a first current source which is substantially independent of temperature variation and has a first current value determined by a first scaling factor of arbitrary value, and a second current source which is substantially proportional to absolute temperature and has a second current value determined by a second scaling factor of arbitrary value.
Claim 2
Dependent Claim
265 words
A circuit for producing an output reference current having an arbitrary predetermined temperature dependence, comprising: a first field effect transistor (FET) having a gate, a source, and a drain; a second field effect transistor having a gate, a source, and a drain, said first FET source and said second FET source being commonly connected, said first FET having a threshold voltage, a bias source, operably coupled to the drain, gate and source of the second FET, that forces the voltage between the gate and the source of the second FET to be substantially equal to the threshold voltage of the first FET; and a temperature dependent current source that provides a temperature dependent current through a first resistor to produce a temperature dependent voltage; the gate of the first FET being operably coupled to the gate of the second FET through the first resistor so that the voltage between the gate and the source of the first FET is equal to a sum of the second FET's gate to source voltage plus the temperature dependent voltage, and producing the output reference current at the drain of the first FET, a second resistor coupled between the first resistor and the sources of the first and second FETs, said temperature dependent current source including: a first current source which is substantially independent of temperature variation and has a first current value determined by a first scaling factor of arbitrary value, and a second current source which is substantially proportional to absolute temperature and has a second current value determined by a second scaling factor of arbitrary value.
Claim 3
Dependent Claim
34 words
A circuit as claimed in claim 1, wherein said first and second FETs are PMOS transistors and wherein the sources of the first and second FETs are both connected to a common supply voltage.
Claim 4
Dependent Claim
37 words
A circuit as defined in claim 1, wherein said less source further comprises feedback means coupled between the drain of said second FET to the gate of said second FET for providing a low output impedance characteristic.
Claim 5
Dependent Claim
39 words
A circuit as defined in claim 1, wherein said further comprises a first and second current sources and third resistor, respectively and wherein said first and second scaling factors are determined by ratios of resistor values of said resistors.
Claim 6
Dependent Claim
19 words
A circuit as defined in claim 1, wherein said temperature dependent current source further includes a third current source.
Claim 7
Dependent Claim
36 words
A circuit according to claim 1, wherein said bias source includes a current source coupled to said drain of said second FET and a feedback transistor coupled between the gate and drain of said second FET.
Claim 8
Dependent Claim
25 words
A circuit according to claim 1, wherein said first and second current sources each include a respective voltage source coupled across a respective resistive device.
Claim 9
Dependent Claim
38 words
A circuit as defined in claim 5, wherein said third current source has a third current value that is substantially proportional to absolute temperature squared and has a value determined by a third scaling factor of arbitrary value.
Claim 10
Dependent Claim
22 words
A circuit according to claim 8, wherein said third current source includes a further voltage source coupled across a further resistive device.
Claim 11
Dependent Claim
253 words
A circuit for producing an output reference current having an arbitrary predetermined temperature dependence, comprising: a first field effect transistor (FET) having a gate, a source, and a drain; a second field effect transistor having a gate, a source, and a drain, said first FET source and said second FET source being commonly connected, a bias source, operably coupled to the drain, gate and source of the second FET, that forces the voltage between the gate and the source of the second FET to be substantially equal to the threshold voltage; and a temperature dependent current source that provides a temperature dependent current through a first resistor to produce a temperature dependent voltage, the temperature dependent current source including a plurality of current source circuits each contributing a portion "i" the temperature dependent current, a second resistor coupled between the first resistor and the sources of the first and second FETs, the gate of the first FET being operably coupled to the gate of the second FET through the first resistor so that the voltage between the gate and the source of the first FET is equal to a sum of the second FET's gate to source voltage plus the temperature dependent voltage, and producing the output reference current at the drain of the first FET, said temperature dependent current being substantially equal to: ε.sub.i=1.sup.n M.sub.i T.sup.i-1 where M i is a predetermined amplitude of the ith portion of the temperature dependent current, T is absolute temperature and n is at least 2.
Claim 12
Dependent Claim
253 words
A circuit for producing an output reference current having an arbitrary predetermined temperature dependence, comprising: a first field effect transistor (FET) having a gate, a source, and a drain; a second field effect transistor having a gate, a source, and a drain, said first FET source and said second FET source being commonly connected, a bias source, operably coupled to the drain, gate and source of the second FET, that forces the voltage between the gate and the source of the second FET to be substantially equal to the threshold voltage; and a temperature dependent current source that provides a temperature dependent current through a first resistor to produce a temperature dependent voltage, the temperature dependent current source including a plurality of current source circuits each contributing a portion "i" the temperature dependent current, a second resistor coupled between the first resistor and the sources of the first and second FETs, the gate of the first FET being operably coupled to the gate of the second FET through the first resistor so that the voltage between the gate and the source of the first FET is equal to a sum of the second FET's gate to source voltage plus the temperature dependent voltage, and producing the output reference current at the drain of the first FET, said temperature dependent current being substantially equal to: ε.sub.i=1.sup.n M.sub.i T.sup.i-1 where M i is a predetermined amplitude of the ith portion of the temperature dependent current, T is absolute temperature and n is at least 2.
Claim 13
Dependent Claim
34 words
A circuit as claimed in claim 10, wherein said first and second FETs are PMOS transistors and wherein the sources of the first and second FETs are both connected to a common supply voltage.
Claim 14
Dependent Claim
36 words
A temperature dependent current source as defined in claim 10, wherein said circuit further comprises scaling resistors and wherein M i is determined by ratios of resistor values of said scaling resistors and said first resistor.
Claim 15
Dependent Claim
36 words
A circuit according to claim 10, wherein said bias source includes a current source coupled to said drain of said second FET and a feedback transistor coupled between the gate and drain of said second FET.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2003-07-18 | 2004-01-17 | 2004-07-18 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2007-07-18 | 2008-01-17 | 2008-07-18 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2011-07-18 | 2012-01-17 | 2012-07-18 | $7700.00 | Window Closed / Lapsed |