Patent US6091154A successfully refreshed from Google Patents.
US6091154A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor device with self-aligned contact and manufacturing method thereof
Assignee: Fujitsu Ltd
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Filing: 1998-01-26
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Granted: 2000-07-18
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Expires: 2018-01-26
Abstract
Abstract A semiconductor device formed on a semiconductor substrate having a first region and a second region, comprising: a wiring layer made of a first conductive layer formed in the second region; a first insulating film formed on the wiring layer; a second insulating film formed on the first region and on the first insulating film; a first contact hole formed in the first region through the second insulating film, and reaching the surface of the first insulating film; a second contact hole having a larger diameter than the first contact hole formed in the second region through the second insulating film, and reaching the surface of the first insulating film; a plug made of a second conductive layer and filled in the first contact hole; a side spacer made of the second conductive layer and formed on the side wall of the second contact hole; and a third contact hole having a smaller diameter than the second contact hole, formed through the first insulating film positioned under the second contact hole, and reaching the wiring layer. There are provided the semiconductor device and its manufacture method which are capable of stably realizing a self-aligned contact method of forming contact holes, without increasing the number of manufacture processes.
Inventors
- 👤 Narumi Ohkawa
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 20:10
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/069; H10W20/056; H10W20/071; H10W20/074; H10W20/076
Claims Analysis
Total Claims: 16
Claim 1
Independent Claim
206 words
A semiconductor device formed on a semiconductor substrate having a first region and a second region, comprising: (a) a first wiring layer made of a first conductive layer formed in the second region of the semiconductor substrate; (b) a first insulating film covering said first wiring layer; (c) a second insulating film formed over the semiconductor substrate, covering said first insulating film; (d) a first contact hole formed through said second insulating film in the first region, said first contact hole having a first diameter and reaching the surface of the semiconductor substrate; (e) a second contact hole formed through said second insulating film in the second region, said second contact hole having a second diameter larger than the first diameter and reaching the surface of said first insulating film; (f) a first conductive plug made of a second conductive layer filled in said first contact hole; (g) a conductive side spacer made of the second conductive layer and formed on a side wall of said second contact hole; and (h) a third contact hole formed through said first insulating film positioned under said second contact hole, said third contact hole having a third diameter smaller than the second diameter and reaching said first wiring layer.
Claim 2
Dependent Claim
206 words
A semiconductor device formed on a semiconductor substrate having a first region and a second region, comprising: (a) a first wiring layer made of a first conductive layer formed in the second region of the semiconductor substrate; (b) a first insulating film covering said first wiring layer; (c) a second insulating film formed over the semiconductor substrate, covering said first insulating film; (d) a first contact hole formed through said second insulating film in the first region, said first contact hole having a first diameter and reaching the surface of the semiconductor substrate; (e) a second contact hole formed through said second insulating film in the second region, said second contact hole having a second diameter larger than the first diameter and reaching the surface of said first insulating film; (f) a first conductive plug made of a second conductive layer filled in said first contact hole; (g) a conductive side spacer made of the second conductive layer and formed on a side wall of said second contact hole; and (h) a third contact hole formed through said first insulating film positioned under said second contact hole, said third contact hole having a third diameter smaller than the second diameter and reaching said first wiring layer.
Claim 3
Dependent Claim
18 words
A semiconductor device according to claim 1, wherein said first and second insulating films have different etching characteristics.
Claim 4
Dependent Claim
52 words
A semiconductor device according to claim 1, further comprising a plurality of second wiring layers made of the first conductive layer and formed in the first region, wherein said first insulating film covers said second wiring layers, and said first contact hole is positioned between an adjacent pair of second wiring layers.
Claim 5
Dependent Claim
42 words
A semiconductor device according to claim 3, wherein said first contact hole is a contact hole to a bit line of a memory cell and said second contact hole is a contact hole to a gate electrode of a sense amplifier circuit.
Claim 6
Dependent Claim
34 words
A semiconductor device according to claim 1, further comprising a third conductive layer formed on said second insulating film, said third conductive layer having substantially the same etching characteristics as said second conductive layer.
Claim 7
Dependent Claim
28 words
A semiconductor device according to claim 1, further comprising a second conductive plug formed in said second and third contact holes for electrically connecting said first wiring layer.
Claim 8
Dependent Claim
40 words
A semiconductor device according to claim 1, further comprising a fourth contact hole formed through said second insulating film and exposing the surface of the semiconductor substrate, said fourth contact hole having a fourth diameter larger than the first diameter.
Claim 9
Dependent Claim
198 words
A semiconductor device formed on a semiconductor substrate having a first region and a second region, comprising: (a) a first wiring layer made of a first conductive layer formed in the second region of the semiconductor substrate; (b) a first insulating film covering said first wiring layer; (c) a second insulating film formed over the semiconductor substrate, covering said first insulating film; (d) a first contact hole formed through said second insulating film in the first region, said first contact hole having a first diameter; (e) a second contact hole formed through said second insulating film in the second region, said second contact hole having a second diameter larger than the first diameter and reaching the surface of said first insulating film; (f) a first conductive plug made of a second conductive layer filled in said first contact hole; (g) a conductive side spacer made of the second conductive layer and formed on a side wall of said second contact hole; and (h) a third contact hole formed through said first insulating film positioned under said second contact hole, said third contact hole having a third diameter smaller than the second diameter and reaching said first wiring layer.
Claim 10
Dependent Claim
198 words
A semiconductor device formed on a semiconductor substrate having a first region and a second region, comprising: (a) a first wiring layer made of a first conductive layer formed in the second region of the semiconductor substrate; (b) a first insulating film covering said first wiring layer; (c) a second insulating film formed over the semiconductor substrate, covering said first insulating film; (d) a first contact hole formed through said second insulating film in the first region, said first contact hole having a first diameter; (e) a second contact hole formed through said second insulating film in the second region, said second contact hole having a second diameter larger than the first diameter and reaching the surface of said first insulating film; (f) a first conductive plug made of a second conductive layer filled in said first contact hole; (g) a conductive side spacer made of the second conductive layer and formed on a side wall of said second contact hole; and (h) a third contact hole formed through said first insulating film positioned under said second contact hole, said third contact hole having a third diameter smaller than the second diameter and reaching said first wiring layer.
Claim 11
Dependent Claim
18 words
A semiconductor device according to claim 8, wherein said first and second insulating films have different etching characteristics.
Claim 12
Dependent Claim
51 words
A semiconductor device according to claim 8, further comprising a plurality of second wiring layers made of the first conductive layer and formed in the first region, wherein said first insulating covers said second wiring layers, and said first contact hole is positioned between an adjacent pair of second wiring layers.
Claim 13
Dependent Claim
42 words
A semiconductor device according to claim 10, wherein said first contact hole is a contact hole to a bit line of a memory cell and said second contact hole is a contact hole to a gate electrode of a sense amplifier circuit.
Claim 14
Dependent Claim
34 words
A semiconductor device according to claim 8, further comprising a third conductive layer formed on said second insulating film, said third conductive layer having substantially the same etching characteristics as said second conductive layer.
Claim 15
Dependent Claim
28 words
A semiconductor device according to claim 8, further comprising a second conductive plug formed in said second and third contact holes for electrically connecting said first wiring layer.
Claim 16
Dependent Claim
40 words
A semiconductor device according to claim 8, further comprising a fourth contact hole formed through said second insulating film and exposing the surface of the semiconductor substrate, said fourth contact hole having a fourth diameter larger than the first diameter.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2003-07-18 | 2004-01-17 | 2004-07-18 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2007-07-18 | 2008-01-17 | 2008-07-18 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2011-07-18 | 2012-01-17 | 2012-07-18 | $7700.00 | Window Closed / Lapsed |