US5679981A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor device having planarized wiring
Assignee: Yamaha Corp
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Filing: 1996-04-17
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Granted: 1997-10-21
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Expires: 2016-04-17
Abstract
Abstract A first contact hole and a second contact hole are formed in an insulating film on the surface of a substrate, and thereafter a blanket tungsten (W) layer is deposited on the substrate surface, with or without a barrier metal layer being interposed therebetween. The first contact hole has a small size a so that the W layer can fully bury the first contact hole, whereas the second contact hole has a large size b over a size c where a<c<b so that a desired wiring layer coverage ratio is attained. The deposited W layer is etched back while leaving the W layer in the first contact hole and a tapered W layer in the second contact hole. A wiring layer such as Al alloy is deposited on the substrate surface. The unnecessary wiring layer and barrier metal layer are patterned to form a wiring pattern. Wiring layers having a good burying state and a good coverage state can be obtained. A yield of manufacturing wiring layers can be improved.
Inventors
- 👤 Tetsuya Kuwajima
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 17:14
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/056
Claims Analysis
Total Claims: 16
Claim 1
Independent Claim
164 words
A semiconductor device, comprising: (a) a semiconductor substrate having an isolation region thereon, the isolation region having at least a slope; (b) an insulating layer formed on the semiconductor substrate, the insulating layer having a topography transferring the slope of the isolation region, the insulating layer having a first hole and a second hole having a larger aperture than the first hole therein; (c) a first conductive layer formed over the first and second holes in the insulating layer and connected to the semiconductor substrate through the first and second holes; (d) a first conductive film filling the first hole to form a conductive plug; (e) a second conductive film formed over a side wall of the second hole, the second conductive film generating a slope topography over the side wall of the second hole and leaving an opening in the second hole; and (f) a second conductive layer formed over the first insulating layer, the first conductive film and the second conductive film.
Claim 2
Dependent Claim
164 words
A semiconductor device, comprising: (a) a semiconductor substrate having an isolation region thereon, the isolation region having at least a slope; (b) an insulating layer formed on the semiconductor substrate, the insulating layer having a topography transferring the slope of the isolation region, the insulating layer having a first hole and a second hole having a larger aperture than the first hole therein; (c) a first conductive layer formed over the first and second holes in the insulating layer and connected to the semiconductor substrate through the first and second holes; (d) a first conductive film filling the first hole to form a conductive plug; (e) a second conductive film formed over a side wall of the second hole, the second conductive film generating a slope topography over the side wall of the second hole and leaving an opening in the second hole; and (f) a second conductive layer formed over the first insulating layer, the first conductive film and the second conductive film.
Claim 3
Dependent Claim
16 words
A semiconductor device according to claim 1, wherein the isolation region is a field oxide film.
Claim 4
Dependent Claim
28 words
A semiconductor device according to claim 1, wherein the insulating layer comprises a material selected from a group consisting of PSG, BPSG and silicon oxide formed with TEOS.
Claim 5
Dependent Claim
28 words
A semiconductor device according to claim 1, wherein the first conductive layer comprises a material selected from a group consisting of Ti, TiN, TiON, TiW and combinations thereof.
Claim 6
Dependent Claim
16 words
A semiconductor device according to claim 1, wherein the first and second conductive films comprise tungsten.
Claim 7
Dependent Claim
25 words
A semiconductor device according to claim 1, wherein the second conductive layer comprises a material selected from a group consisting of aluminum and aluminum alloy.
Claim 8
Dependent Claim
174 words
A semiconductor device, comprising: (a) a semiconductor substrate having an overlying structure thereon; (b) a first interlayer insulating layer formed over the semiconductor substrate, the first interlayer insulating layer having a topography transferring said overlying structure; (c) a first conductive layer formed on the first interlayer insulating layer; (d) a second interlayer insulating layer formed over the first interlayer insulating layer and the first conductive layer, the insulating layer having a first hole and a second hole over the first conductive layer, the second hole having a larger aperture than the first hole; (e) a first conductive film filling the first hole to form a conductive plug; (f) a second conductive film formed over a side wall of the second hole, the second conductive film generating a slope topography over the side wall of the second hole and leaving an opening in the second hole; and (g) a second conductive layer formed over the second interlayer insulating layer, the first conductive film and the second film to be connected with the first conductive layer.
Claim 9
Dependent Claim
174 words
A semiconductor device, comprising: (a) a semiconductor substrate having an overlying structure thereon; (b) a first interlayer insulating layer formed over the semiconductor substrate, the first interlayer insulating layer having a topography transferring said overlying structure; (c) a first conductive layer formed on the first interlayer insulating layer; (d) a second interlayer insulating layer formed over the first interlayer insulating layer and the first conductive layer, the insulating layer having a first hole and a second hole over the first conductive layer, the second hole having a larger aperture than the first hole; (e) a first conductive film filling the first hole to form a conductive plug; (f) a second conductive film formed over a side wall of the second hole, the second conductive film generating a slope topography over the side wall of the second hole and leaving an opening in the second hole; and (g) a second conductive layer formed over the second interlayer insulating layer, the first conductive film and the second film to be connected with the first conductive layer.
Claim 10
Dependent Claim
29 words
A semiconductor device according to claim 7, further comprising: (h) a third conductive layer formed over the first and second holes and underneath the first and second conductive films.
Claim 11
Dependent Claim
28 words
A semiconductor device according to claim 8, wherein the third conductive layer comprises a material selected from a group consisting of Ti, TiN, TiON, TiW and combinations thereof.
Claim 12
Dependent Claim
19 words
A semiconductor device according to claim 7, wherein the overlying structure have a gate electrode and an isolation region.
Claim 13
Dependent Claim
32 words
A semiconductor device according to claim 7, wherein the first and second interlayer insulating layers comprises a material selected from a group consisting of PSG, BPSG and silicon oxide formed with TEOS.
Claim 14
Dependent Claim
16 words
A semiconductor device according to claim 7, wherein the first and second conductive films comprise tungsten.
Claim 15
Dependent Claim
25 words
A semiconductor device according to claim 7, wherein the first conductive layer comprises a material selected from a group consisting of aluminum and aluminum alloy.
Claim 16
Dependent Claim
25 words
A semiconductor device according to claim 7, wherein the second conductive layer comprises a material selected from a group consisting of aluminum and aluminum alloy.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2000-10-20 | 2001-04-21 | 2001-10-21 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2004-10-20 | 2005-04-21 | 2005-10-21 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2008-10-20 | 2009-04-21 | 2009-10-21 | $7700.00 | Window Closed / Lapsed |