US6091123A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Self-aligned SOI device with body contact and NiSi2 gate
Assignee: GlobalFoundries Inc
•
Filing: 1998-06-08
•
Granted: 2000-07-18
•
Expires: 2018-06-08
Abstract
Abstract A self-aligned SOI device with body contact and silicide gate. The SOI device is formed using an ordinary substrate such as silicon. A silicide gate is self-aligned and formed from re-crystallization of nickel and amorphous silicon. The self-aligned silicide gate includes gate contact areas, and is self-aligned with respect to the gate opening, the source and drain regions and a nitride isolation layer. Nickel spacers deposited adjacent the isolation layer, and amorphous silicon deposited between the nickel spacers, form the self-aligned silicide gate through a silicidation process.
Inventors
- 👤 Zoran Krivokapic
- 👤 Shekhar Pramanick
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 16:23
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/01; H10D64/013; H10D64/01302; H10D64/01304; H10D64/01318; H10D64/0132; H10D30/00; H10D30/01; H10D30/021; H10D30/027; H10D30/0278; H10D62/00; H10D62/10; H10D62/113; H10D62/115; H10D62/116; H10D64/01306; H10D64/01308; H10D64/0131; H10D64/01326; H10D64/20; H10D64/27; H10D64/311; H10D64/411; H10D64/511; H10D64/517; H10D64/519; H10D64/60; H10D64/66; H10D64/667; H10D64/668
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
59 words
A self-aligned SOI device with body contact and suicide gate comprising: a substrate; an oxide layer deposited over the substrate, the oxide layer being etched to provide a gate opening; an epitaxial layer deposited over the gate opening; a dielectric layer deposited over the epitaxial layer; and a silicide gate over the dielectric layer aligned with the gate opening.
Claim 2
Dependent Claim
59 words
A self-aligned SOI device with body contact and suicide gate comprising: a substrate; an oxide layer deposited over the substrate, the oxide layer being etched to provide a gate opening; an epitaxial layer deposited over the gate opening; a dielectric layer deposited over the epitaxial layer; and a silicide gate over the dielectric layer aligned with the gate opening.
Claim 3
Dependent Claim
15 words
The self-aligned SOI device defined in claim 1, further comprising source and drain extension implants.
Claim 4
Dependent Claim
19 words
The self-aligned SOI device defined in claim 2, further comprising oxide spacers formed in the source and drain regions.
Claim 5
Dependent Claim
20 words
The self-aligned SOI device defined in claim 3, further comprising a silicide layer formed over the source and drain regions.
Claim 6
Dependent Claim
22 words
The self-aligned SOI device defined in claim 4, further comprising at least one channel dopant deposited between the source and drain regions.
Claim 7
Dependent Claim
15 words
The self-aligned SOI device defined in claim 1, wherein the silicide gate comprises nickel silicide.
Claim 8
Dependent Claim
13 words
The self-aligned SOI device defined in claim 1, further comprising nitride isolation areas.
References Cited (Backward Citations)
US4763183A
Cited
US4716128A
Cited
US5595923A
Cited
US5494837A
Cited
US5854509A
Cited
US5851890A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2003-07-18 | 2004-01-17 | 2004-07-18 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2007-07-18 | 2008-01-17 | 2008-07-18 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2011-07-18 | 2012-01-17 | 2012-07-18 | $7700.00 | Window Closed / Lapsed |