Semiconductor device including a crystalline silicon film

Claim 2

A semiconductor device comprising: a substrate; a p-channel type transistor and an n-channel type transistor formed on said substrate and connected in a complementary manner, said n-channel type transistor comprising: a crystalline semiconductor film comprising silicon having a source, a drain and a channel formed of an intrinsic semiconductor and located between said source and said drain without doped impurities; a gate insulating layer formed over said film to cover at least said channel; and a gate electrode formed on said gate insulating layer and adjacent to said channel, said gate electrode having a laminated structure comprising a first layer apart from said gate insulating layer and a second layer in contact with said gate insulating layer and said first layer, wherein said second layer comprises a material selected from the group consisting of Cr, Ni, Ge, Pd, W, Pt, Au, Co, Cu, Fe, Zn, Mo, Sn and Ag, wherein said p-channel type transistor comprises: a crystalline semiconductor film comprising silicon having a source, a drain and a channel formed of an intrinsic semiconductor and located between said source and said drain without doped impurities; a gate insulating layer formed over said film to cover at least said channel; and a gate electrode adjacent to said channel and formed over said gate insulating layer, wherein said gate electrode comprises aluminum.

Claim 3

A semiconductor device comprising a p-channel type transistor and an n-channel type transistor connected in a complementary manner, wherein said n-channel type transistor comprises: a crystalline semiconductor film comprising silicon having a source, a drain and a channel formed of an intrinsic semiconductor and located between said source and said drain without doped impurities; a gate insulating layer formed over said film to cover at least said channel; and a gate electrode formed on said gate insulating layer and adjacent to said channel, said gate electrode having a laminated structure comprising a first layer apart from said gate insulating layer and a second layer in contact with said gate insulating layer and said first layer, said second layer including a material selected from the group consisting of Cr, Ni, Ge, Pd, W, Pt, Au, Co, Cu, Fe, Zn, Mo, Sn and Ag, and wherein said p-channel type transistor comprises: a crystalline semiconductor film comprising silicon having a source, a drain and a channel formed of an intrinsic semiconductor and located between said source and said drain without doped impurities; a gate insulating layer formed over said film to cover at least said channel; and a gate electrode adjacent to said channel and formed over said gate insulating layer, said gate electrode configured to have a portion which is in contact with said gate insulating layer portion and comprises aluminum.

Claim 4

A semiconductor device comprising a p-channel type transistor and an n-channel type transistor connected in a complementary manner, wherein said n-channel type transistor comprises: a crystalline semiconductor film comprising silicon having a source, a drain and a channel formed of an intrinsic semiconductor and located between said source and said drain without doped impurities; a gate insulating layer formed over said film to cover at least said channel; and a gate electrode formed on said gate insulating layer and adjacent to said channel, said gate electrode having a laminated structure comprising a first layer apart from said gate insulating layer and a second layer in contact with said gate insulating layer and said first layer, said second layer including a material selected from the group consisting of Cr, Ni, Ge, Pd, W, Pt, Au, Co, Cu, Fe, Zn, Mo, Sn and Ag, and wherein said p-channel type transistor comprises: a crystalline semiconductor film comprising silicon having a source, a drain and a channel formed of an intrinsic semiconductor and located between said source and said drain without doped impurities; a gate insulating layer formed over said film to cover at least said channel; and a gate electrode adjacent to said channel and formed over said gate insulating layer, said gate electrode configured to have a portion which is in contact with said gate insulating layer portion and comprises aluminum.

Claim 5

The device of claim 2 wherein said semiconductor device is provided in a logic circuit.

Claim 6

The device of claim 2 wherein said p-channel type transistor and said n-channel type transistor are top gate type transistors.

Claim 7

The device of claim 2 wherein said p-channel type transistor and said n-channel type transistor are bottom gate type transistors.

Claim 8

A semiconductor device comprising a p-channel type transistor and an n-channel type transistor connected in a complementary manner, each of said p-channel type transistor and said n-channel type transistor comprising: a crystalline semiconductor film comprising silicon having a source, a drain and a channel formed of an intrinsic semiconductor and located between said source and said drain without doped impurities; and a gate electrode provided adjacent to said channel with a gate insulating layer therebetween, said gate electrode having a laminated structure comprising a first layer apart from said gate insulating layer-and a second layer provided in contact with said gate insulating layer and said first layer, wherein said second layer comprises a material selected from the group consisting of Cr, Ni, Ge, Pd, W, Pt, Au, Co, Cu, Fe, Zn, Mo, Sn and Ag, and said first layer has a portion that is in contact with said second layer and comprises aluminum.

Claim 9

A semiconductor device comprising a p-channel type transistor and an n-channel type transistor connected in a complementary manner, each of said p-channel type transistor and said n-channel type transistor comprising: a crystalline semiconductor film comprising silicon having a source, a drain and a channel formed of an intrinsic semiconductor and located between said source and said drain without doped impurities; and a gate electrode provided adjacent to said channel with a gate insulating layer therebetween, said gate electrode having a laminated structure comprising a first layer apart from said gate insulating layer-and a second layer provided in contact with said gate insulating layer and said first layer, wherein said second layer comprises a material selected from the group consisting of Cr, Ni, Ge, Pd, W, Pt, Au, Co, Cu, Fe, Zn, Mo, Sn and Ag, and said first layer has a portion that is in contact with said second layer and comprises aluminum.

Claim 10

The device of claim 6 wherein said semiconductor device is provided in a logic circuit.

Claim 11

The device of claim 6 wherein said p-channel type transistor and said n-channel type transistor are top gate type transistors.

Claim 12

The device of claim 6 wherein said p-channel type transistor and said n-channel type transistor are bottom gate type transistors.

Claim 13

The device of any one of claim 1, 2 or 6 wherein the channels of the p-channel type transistor and the n-channel type transistor have a same conductivity type as each other.

Claim 14

The device of any one of claim 1, 2 or 6 wherein said device is a liquid crystal device.

Claim 15

The device of any one of claim 1, 2 or 6 wherein said device is an electroluminescent device.

Claim 16

The device of any one of claim 1, 2 or 6 wherein said device is an electrochronic device.

Claim 17

The device of any one of claim 1, 2 or 6 wherein said device is selected from the group consisting of DRAM, SRAM and BiCMOS.

Claim 18

The device of any one of claim 1, 2 or 6 wherein said device is a video camera.

Claim 19

The device of any one of claim 1, 2 or 6 wherein said device is an information terminal equipment selected from the group consisting of a personal handy phone system and a mobile computer.