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US6090666A
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Method for fabricating semiconductor nanocrystal and semiconductor memory device using the semiconductor nanocrystal
Assignee: Sharp Corp
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Filing: 1998-09-30
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Granted: 2000-07-18
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Expires: 2018-09-30
Abstract
Abstract There are provided a method for fabricating semiconductor nanocrystals which are highly controllable and less variable in density and size, as well as a semiconductor memory device which, with the use of the semiconductor nanocrystals, allows thickness of a insulating film between nanocrystals and channel region to be easily controlled and involves less variations in characteristics such as threshold and programming performance, and which is fast reprogrammable and has nonvolatility. Under a low pressure below atmospheric pressure, an amorphous silicon thin film 3 is deposited on a tunnel insulating film 2 formed on a silicon substrate 1. After the deposition of the amorphous silicon thin film 3, the amorphous silicon thin film 3 is heat treated at a temperature not lower than the deposition temperature of the amorphous silicon thin film 3 in an atmosphere of helium gas having no oxidizability, by which a plurality of spherical nanocrystals 4 with a diameter of 18 nm or less are formed on the tunnel insulating film 2 so as to be spaced from one another. The plurality of nanocrystals 4 are used as the floating gate of a semiconductor memory device.
Inventors
- 👤 Tohru Ueda
- 👤 Kenta Nakamura
- 👤 Yasumori Fukushima
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 13:02
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/20; H10P14/29; H10P14/2901; H10P14/2902; H10P14/2905; B; B82; B82Y; B82Y10/00; G; G11; G11C; G11C16/00; G11C16/02; G11C16/06; G11C16/10; H10D; H10D30/00; H10D30/60; H10D30/68; H10D30/688; H10P14/24; H10P14/32; H10P14/3202; H10P14/3238; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; H10P14/3451; H10P14/3452; H10P14/3454; H10P14/3461; H10P14/38; H10P14/3802; B82Y40/00; G11C2216/00; G11C2216/02; G11C2216/06
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
120 words
A method for fabricating semiconductor nanocrystals comprising: a step for depositing a noncrystal semiconductor thin film on a semiconductor substrate, or on an insulating film formed on the semiconductor substrate, under a low pressure below atmospheric pressure; and a step for, after the deposition of the noncrystal semiconductor thin film, heat treating the noncrystal semiconductor thin film at a temperature not lower than a deposition temperature of the noncrystal semiconductor thin film in a vacuum or in an atmosphere of a gas having no oxidizability, by which a plurality of spherical semiconductor nanocrystals with a diameter of 18 nm or less are formed on the semiconductor substrate or on the insulating film so as to be spaced from one another.
Claim 2
Independent Claim
120 words
A method for fabricating semiconductor nanocrystals comprising: a step for depositing a noncrystal semiconductor thin film on a semiconductor substrate, or on an insulating film formed on the semiconductor substrate, under a low pressure below atmospheric pressure; and a step for, after the deposition of the noncrystal semiconductor thin film, heat treating the noncrystal semiconductor thin film at a temperature not lower than a deposition temperature of the noncrystal semiconductor thin film in a vacuum or in an atmosphere of a gas having no oxidizability, by which a plurality of spherical semiconductor nanocrystals with a diameter of 18 nm or less are formed on the semiconductor substrate or on the insulating film so as to be spaced from one another.
Claim 3
Dependent Claim
35 words
The method for fabricating semiconductor nanocrystals according to claim 1, wherein after the deposition of the noncrystal semiconductor thin film, the semiconductor nanocrystals are formed without exposing the noncrystal semiconductor thin film to the air.
Claim 4
Dependent Claim
57 words
The method for fabricating semiconductor nanocrystals according to claim 1, further comprising a step for, after the deposition of the noncrystal semiconductor thin film, removing an oxide film from a surface of the noncrystal semiconductor thin film at a temperature not higher than the deposition temperature of the noncrystal semiconductor thin film before forming the semiconductor nanocrystals.
Claim 5
Dependent Claim
48 words
The method for fabricating semiconductor nanocrystals according to claim 1, further comprising a step for, after the deposition of the noncrystal semiconductor thin film, forming crystal nuclei at the surface of the noncrystal semiconductor thin film at a low pressure below atmospheric pressure before forming the semiconductor nanocrystals.
Claim 6
Dependent Claim
55 words
The method for fabricating semiconductor nanocrystals according to claim 4, wherein: the semiconductor nanocrystals are made from silicon; and the step for forming the crystal nuclei is carried out in a 0.01 Torr or lower vacuum by using a gas containing any one of silane gas, disilane gas or trisilane gas as a material gas.
Claim 7
Dependent Claim
52 words
The method for fabricating semiconductor nanocrystals according to claim 4, wherein: the semiconductor nanocrystals are made from germanium; and the step for forming the crystal nuclei is carried out in a 0.01 Torr or lower vacuum by using a gas containing either one of germanium tetrafluoride or monogermane as a material gas.
Claim 8
Dependent Claim
65 words
The method for fabricating semiconductor nanocrystals according to claim 4, wherein: the semiconductor nanocrystals are made from silicon and germanium; and the step for forming the crystal nuclei is carried out in a 0.01 Torr or lower vacuum by using a gas containing any one of silane gas, disilane gas or trisilane gas and either one of germanium tetrafluoride or monogermane as a material gas.
Claim 9
Dependent Claim
52 words
The method for fabricating semiconductor nanocrystals according to claim 1, further comprising a step for, after the noncrystal semiconductor thin film is deposited on the semiconductor substrate and the semiconductor nanocrystals are formed, oxidizing the surface of the semiconductor nanocrystals and the surface of the semiconductor substrate, thereby forming an oxide film.
Claim 10
Dependent Claim
35 words
The method for fabricating semiconductor nanocrystals according to claim 1, wherein a deposition thickness "t" of the noncrystal semiconductor thin film and a center distance "s" of adjacent semiconductor nanocrystals satisfy a relationship that t<(π/6)s.
Claim 11
Dependent Claim
29 words
The method for fabricating semiconductor nanocrystals according to claim 1, wherein the semiconductor nanocrystals are made from any one of silicon, germanium or a mixture of silicon and germanium.
Claim 12
Dependent Claim
113 words
The method for fabricating semiconductor nanocrystals according to claim 10, wherein: the semiconductor nanocrystals are made from silicon; in the step for forming the noncrystal semiconductor thin film, an amorphous silicon thin film is deposited by using any one of silane gas, disilane gas or trisilane gas as a material gas, or by using a mixed gas of any one of silane gas, disilane gas or trisilane gas and a gas having no oxidizability as a material gas; and in the step for forming the semiconductor nanocrystals, the semiconductor nanocrystals are grown in a 10 Torr or lower vacuum or in a 10 Torr or lower atmosphere of a gas having no oxidizability.
Claim 13
Dependent Claim
107 words
The method for fabricating semiconductor nanocrystals according to claim 10, wherein: the semiconductor nanocrystals are made from germanium; in the step for forming the noncrystal semiconductor thin film, an amorphous germanium thin film is deposited by using any one of germanium tetrafluoride or monogermane as a material gas, or by using a mixed gas of either one of germanium tetrafluoride or monogermane and a gas having no oxidizability as a material gas; and in the step for forming the semiconductor nanocrystals, the semiconductor nanocrystals are grown in a 10 Torr or lower vacuum or in a 10 Torr or lower atmosphere of a gas having no oxidizability.
Claim 14
Dependent Claim
129 words
The method for fabricating semiconductor nanocrystals according to claim 10, wherein the semiconductor nanocrystals are made from silicon and germanium; in the step for forming the noncrystal semiconductor thin film, an amorphous silicon-germanium thin film is deposited by using any one of silane gas, disilane gas or trisilane gas and either one of germanium tetrafluoride or monogermane as a material gas, or by using a mixed gas of any one of silane gas, disilane gas or trisilane gas, either one of germanium tetrafluoride or monogermane and a gas having no oxidizability as a material gas; and in the step for forming the semiconductor nanocrystals, the semiconductor nanocrystals are grown in a 10 Torr or lower vacuum or in a 10 Torr or lower atmosphere a gas having no oxidizability.
References Cited (Backward Citations)
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