US6090659A
Expired / Lapsed
US
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Lead silicate based capacitor structures
Assignee: International Business Machines Corp
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Filing: 1999-05-19
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Granted: 2000-07-18
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Expires: 2019-05-19
Abstract
Abstract A capacitor and method of making is described incorporating a semiconductor substrate, a bottom electrode formed on or in the substrate, a dielectric layer of barium or lead silicate, and a top electrode. A sandwich dielectric of a barium or lead silicate and a high dielectric constant material such as barium or lead titanate may comprise the dielectric. The silicate layer may be formed by evaporating and diffusing, ion implanting, or electroplating and diffusing barium or lead. The high epsilon dielectric constant material may be formed by sol gel deposition, metal organic chemical vapor deposition or sputtering. The invention overcomes the problem of a bottom electrode and dielectric layer which chemically interact to form a silicon oxide layer in series or below the desired dielectric layer.
Inventors
- 👤 Robert Benjamin Laibowitz
- 👤 Thomas McCarroll Shaw
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 01:14
CPC Classifications
H; H10; H10D; H10D1/00; H10D1/60; H10D1/68; H10D1/682; H01; H01G; H01G4/00; H01G4/002; H01G4/018; H01G4/06; H01G4/08; H01G4/10; H01G4/12; H01G4/129; H10P; H10P14/00; H10P14/60; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6329; H10P14/6334; H10P14/65; H10P14/6502; H10P14/6506; H10P14/69; H10P14/692; H10P14/6938; H10P14/69398; H10P14/66; H10P14/662; H10P14/6921; H10P14/69215
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
128 words
A method of forming a capacitor comprising the steps of: forming a layer of silicon dioxide on a semiconductor substrate, forming a film selected from the steps consisting of evaporating, ion implanting and electroplating a first material selected from the group consisting of barium and lead on the upper surface of said silicon dioxide layer, diffusing atoms of said material into said silicon oxide layer by raising the temperature of said silicon dioxide layer and said film of first material to form a first dielectric layer of a second material selected from the group consisting of a barium silicate, lead silicate and mixtures thereof and mixtures with silicon dioxide, removing the remainder of said film of first material, and forming a top electrode on said first dielectric layer.
Claim 2
Independent Claim
128 words
A method of forming a capacitor comprising the steps of: forming a layer of silicon dioxide on a semiconductor substrate, forming a film selected from the steps consisting of evaporating, ion implanting and electroplating a first material selected from the group consisting of barium and lead on the upper surface of said silicon dioxide layer, diffusing atoms of said material into said silicon oxide layer by raising the temperature of said silicon dioxide layer and said film of first material to form a first dielectric layer of a second material selected from the group consisting of a barium silicate, lead silicate and mixtures thereof and mixtures with silicon dioxide, removing the remainder of said film of first material, and forming a top electrode on said first dielectric layer.
Claim 3
Dependent Claim
56 words
The method of claim 1 further including the step of forming a second dielectric layer of third material over said first dielectric layer, said third material being a high dielectric constant material greater than 100 deposited by a process selected from the group consisting of sol gel deposition, sputtering and Metal Organic Chemical Vapor Deposition (MOCVD).
Claim 4
Independent Claim
118 words
A method of forming an array of capacitors comprising the steps of: forming a layer of silicon dioxide on a semiconductor substrate, forming a film selected from the steps consisting of evaporating, ion implanting and electroplating a first material selected from the group consisting of barium and lead on the upper surface of said layer of silicon dioxide, diffusing atoms of said first material into said layer of silicon dioxide to form a first dielectric layer, removing the residual portion of said film of first material on said first dielectric layer, forming a blanket layer of metal over said first dielectric layer, and patterning said metal layer and said first dielectric layer to form said array of capacitors.
Claim 5
Independent Claim
118 words
A method of forming an array of capacitors comprising the steps of: forming a layer of silicon dioxide on a semiconductor substrate, forming a film selected from the steps consisting of evaporating, ion implanting and electroplating a first material selected from the group consisting of barium and lead on the upper surface of said layer of silicon dioxide, diffusing atoms of said first material into said layer of silicon dioxide to form a first dielectric layer, removing the residual portion of said film of first material on said first dielectric layer, forming a blanket layer of metal over said first dielectric layer, and patterning said metal layer and said first dielectric layer to form said array of capacitors.
References Cited (Backward Citations)
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