Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
102 words
A method of manufacturing a ferroelectric memory of MFS or MFIS-type, comprising the steps of: a) forming on a substrate an insulating layer for preventing reaction at an interface between a ferroelectric material and a silicon substrate; b) forming a ferroelectric layer on the insulating layer; c) reacting a material of the insulating layer with a material of the ferroelectric layer, to transform the insulating layer into part of the ferroelectric layer; and d) forming an electrode on the ferroelectric layer, and wherein the insulating layer is formed of a material selected from the group of materials consisting of the ferroelectric layer.
Claim 2
Independent Claim
102 words
A method of manufacturing a ferroelectric memory of MFS or MFIS-type, comprising the steps of: a) forming on a substrate an insulating layer for preventing reaction at an interface between a ferroelectric material and a silicon substrate; b) forming a ferroelectric layer on the insulating layer; c) reacting a material of the insulating layer with a material of the ferroelectric layer, to transform the insulating layer into part of the ferroelectric layer; and d) forming an electrode on the ferroelectric layer, and wherein the insulating layer is formed of a material selected from the group of materials consisting of the ferroelectric layer.
Claim 3
Dependent Claim
24 words
The method of claim 1, wherein the insulating layer is formed by one selected from the group consisting of sol-gel, sputter and CVD methods.
Claim 4
Dependent Claim
24 words
The method of claim 1, wherein the ferroelectric layer is formed by one selected from the group consisting of sol-gel, sputter and MOCVD methods.
Claim 5
Dependent Claim
11 words
The method of claim 1, wherein the ferroelectric material is PZT.
Claim 6
Dependent Claim
17 words
The method of claim 1, wherein the ferroelectric material is a material of a layered structure group.
Claim 7
Dependent Claim
47 words
The method of claim 5, wherein the material of a layered structure group is one selected from the group consisting of SrBi 2 Ta 2 O 9 , CaBi 2 Ta 2 O 9 , Bi 3 TiNbO 9 and Bi 4 Ti 3 O 12 .
Claim 8
Dependent Claim
33 words
The method of claim 1, wherein the ferroelectric material is PZT, and the insulating layer is formed of one selected from the group consisting of Ti, Zr, TiO 2 , ZrO 2 .
Claim 9
Dependent Claim
38 words
The method of claim 1, wherein the ferroelectric material is SrBi 2 Ta 2 O 9 , and the insulating layer is formed of one selected from the group consisting of Bi, Ta, Sr, Bi-oxide, Ta-oxide and Sr--Ti-oxide.
Claim 10
Dependent Claim
36 words
The method of claim 1, wherein the ferroelectric material is CaBi 2 Ta 2 O 9 , and the insulating layer is formed of one selected from the group consisting of Ta, Bi, Bi-oxide, and Ta-oxide.
Claim 11
Dependent Claim
33 words
The method of claim 1, wherein the ferroelectric material is Bi 3 TiNbO 9 , and the insulating layer is formed of one selected from the group consisting of Bi, Ti-oxide, and Bi--Ti-oxide.
Claim 12
Dependent Claim
36 words
The method of claim 1, wherein the ferroelectric material is Bi 4 Ti 3 O 12 , and the insulating layer is formed of one selected from the group consisting of Ti, Bi, Ti-oxide, and Bi--Ti-oxide.
Claim 13
Dependent Claim
17 words
The method of claim 1, wherein the step c) is performed simultaneously during forming the ferroelectric layer.
Claim 14
Dependent Claim
18 words
The method of claim 1, wherein the step c) is performed by annealing after forming the ferroelectric layer.