Patent US6078093A successfully refreshed from Google Patents.
US6078093A
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Capacitor structure of semiconductor device for high dielectric constant
Assignee: SK Hynix Inc
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Filing: 1997-10-30
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Granted: 2000-06-20
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Expires: 2017-10-30
Abstract
Abstract A semiconductor device capacitor structure comprises a semiconductor substrate having an impurity diffusion region; an insulating layer formed on the semiconductor substrate and having a contact hole on the impurity diffusion region; a first lower electrode of a half ring type formed on the insulating film along an upper edge of the contact hole; a second lower electrode formed on a surface of the substrate exposed through the contact hole, a wall of the contact hole, and the first lower electrode; a dielectric layer formed on the first and second lower electrodes; and an upper electrode formed on the dielectric layer. This structure increases capacitance, thereby improving the characteristics and reliability of the device.
Inventors
- 👤 Chang Jae Lee
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 12:52
CPC Classifications
H; H10; H10B; H10B12/00; H10B12/01; H10B12/02; H10B12/03; H10B12/033; H10D; H10D1/00; H10D1/60; H10D1/68
Claims Analysis
Total Claims: 16
Claim 1
Independent Claim
121 words
A capacitor structure of a semiconductor device, the capacitor structure comprising: a semiconductor substrate having an impurity diffusion region; an insulating layer on the semiconductor substrate and having a contact hole on the impurity diffusion region; a first lower electrode having a hemispherical shape in a cross-sectional view perpendicular to the semiconductor substrate on the insulating layer along an upper edge of the contact hole; a barrier metal layer on the first lower electrode and in the contact hole; a second lower electrode on the barrier metal layer, wherein the first and second lower electrodes are not directly in contact with each other; a dielectric layer on the first and second lower electrodes; and an upper electrode on the dielectric layer.
Claim 2
Dependent Claim
121 words
A capacitor structure of a semiconductor device, the capacitor structure comprising: a semiconductor substrate having an impurity diffusion region; an insulating layer on the semiconductor substrate and having a contact hole on the impurity diffusion region; a first lower electrode having a hemispherical shape in a cross-sectional view perpendicular to the semiconductor substrate on the insulating layer along an upper edge of the contact hole; a barrier metal layer on the first lower electrode and in the contact hole; a second lower electrode on the barrier metal layer, wherein the first and second lower electrodes are not directly in contact with each other; a dielectric layer on the first and second lower electrodes; and an upper electrode on the dielectric layer.
Claim 3
Dependent Claim
29 words
The capacitor structure as claimed in claim 1, wherein the insulating layer comprises first and second insulating layers formed of materials having a different etching rate from one another.
Claim 4
Dependent Claim
27 words
The capacitor structure as claimed in claim 2, wherein the first insulating layer is formed to a thickness of 3000 Å(±200 Å) by using SiO 2 .
Claim 5
Dependent Claim
29 words
The capacitor structure as claimed in claim 2, wherein the second insulating layer is formed to a thickness of 300 Å(±20 Å) by using Si 3 N 4 .
Claim 6
Dependent Claim
19 words
The capacitor structure as claimed in claim 1, wherein the upper and lower electrodes are comprised of platinum (Pt).
Claim 7
Dependent Claim
20 words
The capacitor structure as claimed in claim 1, wherein the upper and lower electrodes are comprised of RuO 2 .
Claim 8
Dependent Claim
19 words
The capacitor structure as claimed 1, wherein the barrier metal layer is in contact with the impurity diffusion region.
Claim 9
Dependent Claim
17 words
The capacitor structure as claimed in claim 7, wherein the barrier metal layer is comprised of TiN.
Claim 10
Dependent Claim
18 words
The capacitor structure as claimed in claim 1, wherein the upper and lower electrodes are comprised of polysilicon.
Claim 11
Dependent Claim
22 words
The capacitor structure as claimed in claim 5, wherein the dielectric layer is comprised of a material having a high dielectric constant.
Claim 12
Dependent Claim
22 words
The capacitor structure as claimed in claim 6, wherein the dielectric layer is comprised of a material having a high dielectric constant.
Claim 13
Dependent Claim
19 words
The capacitor structure as claimed in claim 9, wherein the dielectric layer is formed of an oxide-nitride (ON) structure.
Claim 14
Dependent Claim
19 words
The capacitor structure as claimed in claim 1, wherein the first lower electrode comprises first and second conductive sidewalls.
Claim 15
Dependent Claim
19 words
The capacitor structure as claimed in claim 13, wherein the first and second conductive sidewalls directly contact each other.
Claim 16
Dependent Claim
18 words
The capacitor structure as claimed in claim 13, wherein the first and second conductive sidewalls have different heights.
References Cited (Backward Citations)
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2003-06-20 | 2003-12-20 | 2004-06-20 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2007-06-20 | 2007-12-20 | 2008-06-20 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2011-06-20 | 2011-12-20 | 2012-06-20 | $7700.00 | Window Closed / Lapsed |