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US6071787A
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Method of forming a capacitor including forming a first and second conductive layers and etching layers to form alloyed conductive sidewall spacers
Assignee: SK Hynix Inc
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Filing: 1999-03-03
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Granted: 2000-06-06
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Expires: 2019-03-03
Abstract
Abstract A capacitor fabrication method for a semiconductor memory device, and in particular for a lower-portion electrode forming of a memory cell capacitor, wherein the entire effective area of the capacitor is extended by using a second conductive layer pattern as a mask and patterning an underlying first conductive layer which will be the lower-portion electrode. A mixed conductive material residue is generated in forming the lower-portion electrode and forms conductive residue sidewalls at the both sides of the lower-portion electrode.
Inventors
- 👤 Jae-Hyun Joo
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 12:05
CPC Classifications
H; H10; H10D; H10D84/00; H10D1/00; H10D1/01; H10D1/041; H10D1/042; H10D1/60; H10D1/68; H10D1/692; H10D1/711; H10D1/716; H10D1/682
Claims Analysis
Total Claims: 20
Claim 1
Independent Claim
106 words
A capacitor fabrication method for a semiconductor memory device, comprising: forming a first conductive layer on a semiconductor substrate where a contact plug is formed; forming a second conductive layer pattern on an upper portion of the first conductive layer; and forming a first conductive layer pattern by using the second conductive layer pattern as a mask for patterning the first conductive layer, wherein in patterning the first conductive layer, conductive sidewalls are formed at both sides of the first conductive layer pattern and the second conductive layer pattern, and wherein the sidewalls include an alloy of the first conductive layer and the second conductive layer.
Claim 2
Dependent Claim
106 words
A capacitor fabrication method for a semiconductor memory device, comprising: forming a first conductive layer on a semiconductor substrate where a contact plug is formed; forming a second conductive layer pattern on an upper portion of the first conductive layer; and forming a first conductive layer pattern by using the second conductive layer pattern as a mask for patterning the first conductive layer, wherein in patterning the first conductive layer, conductive sidewalls are formed at both sides of the first conductive layer pattern and the second conductive layer pattern, and wherein the sidewalls include an alloy of the first conductive layer and the second conductive layer.
Claim 3
Dependent Claim
16 words
The method of claim 1, further comprising: partly or entirely removing the second conductive layer pattern.
Claim 4
Dependent Claim
39 words
The method of claim 1, wherein the step of forming the second conductive layer pattern comprises: forming a mask pattern on the second conductive layer; and utilizing the mask pattern for performing a patterning of the second conductive layer.
Claim 5
Dependent Claim
27 words
The method of claim 3, wherein the second conductive layer pattern consists of a material having an etching selectivity higher than that of the first conductive layer.
Claim 6
Dependent Claim
15 words
The method of claim 4, wherein the first conductive layer includes a Pt thin film.
Claim 7
Dependent Claim
22 words
The method of claim 4, wherein the second conductive layer pattern includes a Ru thin film or a RuO x thin film.
Claim 8
Dependent Claim
17 words
The method of claim 1, wherein the mask pattern includes an oxide film or a photoresist film.
Claim 9
Dependent Claim
21 words
The method of claim 7, wherein an adhesive layer is additionally formed between the oxide layer and the second conductive layer.
Claim 10
Dependent Claim
17 words
The method of claim 8, wherein the adhesive layer includes at least one of Ti and Ta.
Claim 11
Dependent Claim
29 words
The method of claim 5, wherein etching and patterning of the Pt thin film is performed by a gas including at least one of Ar and Cl 2 .
Claim 12
Dependent Claim
21 words
The method of claim 6, wherein etching and patterning of the Ru thin film are performed by a plasma including oxygen.
Claim 13
Dependent Claim
23 words
The method of claim 1, wherein an oxide conductive film is additionally formed on the conductive sidewalls and the second conductive layer pattern.
Claim 14
Dependent Claim
30 words
The method of claim 12, wherein the oxide conductive film is formed by thermally-treating or plasma treating the sidewalls and the second conductive layer pattern in an ambient containing oxygen.
Claim 15
Dependent Claim
10 words
The method of claim 1, wherein the compound includes Pt--Ru.
Claim 16
Dependent Claim
29 words
The method of claim 1, wherein a dielectric film is formed at an upper portion of the semiconductor substrate including the second conductive layer pattern and the conductive sidewalls.
Claim 17
Dependent Claim
50 words
The method of claim 15, wherein the dielectric film includes a material composed of ABO 3 , where A is one of a group consisting of Pb, La, Ba, Sr and Li, B is one of a group consisting of Zr, Ti, Nb and Ta and where O is oxygen.
Claim 18
Dependent Claim
114 words
A capacitor fabrication method for a semiconductor memory device, comprising: forming a first conductive layer on a semiconductor substrate where a contact plug is formed; forming a second conductive layer pattern on an upper portion of the first conductive layer; and forming a first conductive layer pattern by using the second conductive layer pattern as a mask for patterning the first conductive layer, wherein in patterning the first conductive layer, conductive sidewalls are formed at both sides of the first conductive layer pattern and the second conductive layer pattern, and wherein etching and patterning of the first conductive layer is performed by a gas including at least one of Ar and Cl 2 .
Claim 19
Dependent Claim
114 words
A capacitor fabrication method for a semiconductor memory device, comprising: forming a first conductive layer on a semiconductor substrate where a contact plug is formed; forming a second conductive layer pattern on an upper portion of the first conductive layer; and forming a first conductive layer pattern by using the second conductive layer pattern as a mask for patterning the first conductive layer, wherein in patterning the first conductive layer, conductive sidewalls are formed at both sides of the first conductive layer pattern and the second conductive layer pattern, and wherein etching and patterning of the first conductive layer is performed by a gas including at least one of Ar and Cl 2 .
Claim 20
Dependent Claim
15 words
The method of claim 17, wherein the first conductive layer includes a Pt thin film.
References Cited (Backward Citations)
US5825609A
Cited
US5790366A
Cited
US5254217A
Cited
US5443688A
Cited
US5479317A
Cited
US5519235A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2003-06-06 | 2003-12-06 | 2004-06-06 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2007-06-06 | 2007-12-06 | 2008-06-06 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2011-06-06 | 2011-12-06 | 2012-06-06 | $7700.00 | Window Closed / Lapsed |