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US6071771A
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Semiconductor processing method of forming a capacitor and capacitor constructions
Assignee: Micron Technology Inc
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Filing: 1998-07-23
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Granted: 2000-06-06
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Expires: 2018-07-23
Abstract
Abstract A semiconductor processing method of forming a capacitor on a substrate includes, a) providing an oxidizable and electrically conductive inner capacitor plate on the substrate; b) cleaning the inner capacitor plate to remove oxide therefrom; c) within a chemical vapor deposition reactor, chemical vapor depositing a dielectric nitride layer over the cleaned inner capacitor plate to a first thickness, the substrate not being exposed to oxidizing conditions between the cleaning and chemical vapor depositing steps; d) providing a densified Ta 2 O 5 dielectric layer over the dielectric nitride layer; and e) providing an outer capacitor plate over the Ta 2 O 5 layer. Additionally, a method of forming a capacitor on a substrate includes, i) providing an oxidizable and electrically conductive inner capacitor plate on a substrate; ii) providing a densified Ta 2 O 5 dielectric layer over the inner capacitor plate; iii) within a chemical vapor deposition reactor, chemical vapor depositing a dielectric nitride layer over the Ta 2 O 5 layer to a first thickness; and iv) providing an outer capacitor plate over the Ta 2 O 5 layer, the outer capacitor plate being provided outwardly of the dielectric nitride layer. The invention also includes capacitors produced according to the method.
Inventors
- 👤 Klaus Schuegraf
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 01:48
CPC Classifications
H; H10; H10D; H10D1/00; H10D1/60; H10D1/68
Claims Analysis
Total Claims: 28
Claim 1
Independent Claim
71 words
A semiconductor processing method of forming a capacitor comprising: forming an inner capacitor plate over a substrate; first chemical vapor depositing a dielectric nitride layer over the inner capacitor plate to a first thickness; separately second chemical vapor depositing a Ta 2 O 5 dielectric layer over the dielectric nitride layer; densifying the Ta 2 O 5 layer; and forming an outer capacitor plate over the Ta 2 O 5 layer.
Claim 2
Dependent Claim
71 words
A semiconductor processing method of forming a capacitor comprising: forming an inner capacitor plate over a substrate; first chemical vapor depositing a dielectric nitride layer over the inner capacitor plate to a first thickness; separately second chemical vapor depositing a Ta 2 O 5 dielectric layer over the dielectric nitride layer; densifying the Ta 2 O 5 layer; and forming an outer capacitor plate over the Ta 2 O 5 layer.
Claim 3
Dependent Claim
21 words
The semiconductor processing method of forming a capacitor of claim 1 wherein the first thickness is less than about 30 Angstroms.
Claim 4
Dependent Claim
21 words
The semiconductor processing method of forming a capacitor of claim 1 wherein the first thickness is less than about 20 Angstroms.
Claim 5
Dependent Claim
22 words
The semiconductor processing method of forming a capacitor of claim 1 wherein the dielectric nitride layer comprises Si 3 N 4 .
Claim 6
Dependent Claim
29 words
The semiconductor processing method of forming a capacitor of claim 1 further comprising cleaning the inner capacitor plate to remove oxide therefrom prior to the first chemical vapor depositing.
Claim 7
Dependent Claim
74 words
A semiconductor processing method of forming a capacitor comprising: forming an inner capacitor plate over a substrate; chemical vapor depositing a silicon nitride layer over the inner capacitor plate to a first thickness; after the chemical vapor depositing of the silicon nitride layer, forming a densified Ta 2 O 5 dielectric layer having a second thickness over the silicon nitride layer; and forming an outer capacitor plate over the Ta 2 O 5 layer.
Claim 8
Dependent Claim
74 words
A semiconductor processing method of forming a capacitor comprising: forming an inner capacitor plate over a substrate; chemical vapor depositing a silicon nitride layer over the inner capacitor plate to a first thickness; after the chemical vapor depositing of the silicon nitride layer, forming a densified Ta 2 O 5 dielectric layer having a second thickness over the silicon nitride layer; and forming an outer capacitor plate over the Ta 2 O 5 layer.
Claim 9
Dependent Claim
21 words
The semiconductor processing method of forming a capacitor of claim 6 wherein the first thickness is less than about 30 Angstroms.
Claim 10
Dependent Claim
21 words
The semiconductor processing method of forming a capacitor of claim 6 wherein the first thickness is less than about 20 Angstroms.
Claim 11
Dependent Claim
33 words
The semiconductor processing method of forming a capacitor of claim 6 further comprising cleaning the inner capacitor plate to remove oxide therefrom prior to the chemical vapor depositing of the silicon nitride layer.
Claim 12
Dependent Claim
86 words
A semiconductor processing method of forming a capacitor comprising: it forming an inner capacitor plate over a substrate; chemical vapor depositing a first dielectric nitride layer over the inner capacitor plate; forming a densified Ta 2 O 5 dielectric layer over the first dielectric nitride layer; chemical vapor depositing a second dielectric nitride layer over the Ta 2 O 5 layer to a first thickness; and forming an outer capacitor plate over the Ta 2 O 5 layer and outwardly of the second dielectric nitride layer.
Claim 13
Dependent Claim
86 words
A semiconductor processing method of forming a capacitor comprising: it forming an inner capacitor plate over a substrate; chemical vapor depositing a first dielectric nitride layer over the inner capacitor plate; forming a densified Ta 2 O 5 dielectric layer over the first dielectric nitride layer; chemical vapor depositing a second dielectric nitride layer over the Ta 2 O 5 layer to a first thickness; and forming an outer capacitor plate over the Ta 2 O 5 layer and outwardly of the second dielectric nitride layer.
Claim 14
Dependent Claim
21 words
The semiconductor processing method of forming a capacitor of claim 10 wherein the first thickness is less than about 30 Angstroms.
Claim 15
Dependent Claim
21 words
The semiconductor processing method of forming a capacitor of claim 10 wherein the first thickness is less than about 20 Angstroms.
Claim 16
Dependent Claim
21 words
The semiconductor processing method of forming a capacitor of claim 10 wherein the dielectric nitride comprises Si 3 N 4 .
Claim 17
Dependent Claim
92 words
A semiconductor processing method of forming a capacitor comprising: forming an inner capacitor plate over a substrate; first chemical vapor depositing a first dielectric nitride layer over the inner capacitor plate to a first thickness; forming a separate densified Ta 2 O 5 dielectric layer over the first dielectric nitride layer; second chemical vapor depositing a second dielectric nitride layer over the Ta 2 O 5 layer to a second thickness; and forming an outer capacitor plate over the Ta 2 O 5 layer and outwardly of the second dielectric nitride layer.
Claim 18
Dependent Claim
92 words
A semiconductor processing method of forming a capacitor comprising: forming an inner capacitor plate over a substrate; first chemical vapor depositing a first dielectric nitride layer over the inner capacitor plate to a first thickness; forming a separate densified Ta 2 O 5 dielectric layer over the first dielectric nitride layer; second chemical vapor depositing a second dielectric nitride layer over the Ta 2 O 5 layer to a second thickness; and forming an outer capacitor plate over the Ta 2 O 5 layer and outwardly of the second dielectric nitride layer.
Claim 19
Dependent Claim
23 words
The semiconductor processing method of forming a capacitor of claim 14 wherein the first and second thicknesses are less than about 30 Angstroms.
Claim 20
Dependent Claim
23 words
The semiconductor processing method of forming a capacitor of claim 14 wherein the first and second thicknesses are less than about 20 Angstroms.
Claim 21
Dependent Claim
25 words
The semiconductor processing method of forming a capacitor of claim 14 wherein the first and second dielectric nitride layers comprise Si 3 N 4 .
Claim 22
Dependent Claim
29 words
The semiconductor processing method of forming a capacitor of claim 14 further comprising cleaning the inner capacitor plate to remove oxide therefrom prior to the first chemical vapor depositing.
Claim 23
Dependent Claim
90 words
A semiconductor processing method of forming a capacitor comprising: forming an inner capacitor plate over a substrate; first chemical vapor depositing a first dielectric nitride layer over the inner capacitor plate to a first thickness; forming a separate Ta 2 O 5 dielectric layer over the first dielectric nitride layer; densifying the Ta 2 O 5 layer; second chemical vapor depositing a second dielectric nitride layer over the Ta 2 O 5 layer to a second thickness; and forming an outer capacitor plate over the Ta 2 O 5 layer.
Claim 24
Dependent Claim
90 words
A semiconductor processing method of forming a capacitor comprising: forming an inner capacitor plate over a substrate; first chemical vapor depositing a first dielectric nitride layer over the inner capacitor plate to a first thickness; forming a separate Ta 2 O 5 dielectric layer over the first dielectric nitride layer; densifying the Ta 2 O 5 layer; second chemical vapor depositing a second dielectric nitride layer over the Ta 2 O 5 layer to a second thickness; and forming an outer capacitor plate over the Ta 2 O 5 layer.
Claim 25
Dependent Claim
23 words
The semiconductor processing method of forming a capacitor of claim 19 wherein the first and second thicknesses are less than about 30 Angstroms.
Claim 26
Dependent Claim
23 words
The semiconductor processing method of forming a capacitor of claim 19 wherein the first and second thicknesses are less than about 20 Angstroms.
Claim 27
Dependent Claim
25 words
The semiconductor processing method of forming a capacitor of claim 19 wherein the first and second dielectric nitride layers comprise Si 3 N 4 .
Claim 28
Dependent Claim
29 words
The semiconductor processing method of forming a capacitor of claim 19 further comprising cleaning the inner capacitor plate to remove oxide therefrom prior to the first chemical vapor depositing.
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| 3.5 Years (Year 4) | 2003-06-06 | 2003-12-06 | 2004-06-06 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2007-06-06 | 2007-12-06 | 2008-06-06 | $3760.00 | Window Closed / Lapsed |
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