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US6068884A
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Method of making low κ dielectric inorganic/organic hybrid films
Assignee: Applied Materials Inc
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Filing: 1998-04-28
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Granted: 2000-05-30
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Expires: 2018-04-28
Abstract
Abstract A method of depositing a dielectric film exhibiting a low dielectric constant in a semiconductor and/or integrated circuit by chemical vapor deposition (CVD) is provided. The film is deposited using an organosilicon precursor in a manner such that the film is comprised of a backbone made substantially of Si--O--Si or Si--N--Si groups with organic side groups attached to the backbone.
Inventors
- 👤 Peter Rose
- 👤 Eugene Lopata
- 👤 John Felts
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 21:04
CPC Classifications
B; B32; B32B; B32B9/00; B32B9/04; C; C09; C09D; C09D4/00; C23; C23C; C23C16/00; C23C16/22; C23C16/30; C23C16/40; C23C16/401; H; H10; H10P; H10P14/00; H10P14/60; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/6336; H10P14/66; H10P14/668; H10P14/6681; H10P14/6682; H10P14/6684; H10P14/6686; H10P14/69; H10P14/692; H10P14/6921; H10P14/6922; Y; Y10; Y10T; Y10T428/00; Y10T428/24; Y10T428/24802; Y10T428/24917; Y10T428/31504; Y10T428/31652; Y10T428/31663
Claims Analysis
Total Claims: 36
Claim 1
Independent Claim
114 words
A method of fabricating a dielectric film on a semiconductor or integrated circuit having a low dielectric constant comprising the steps of: providing at least one organosilicon precursor; depositing by chemical vapor deposition where said precursor reacts and deposits said dielectric film on the surface of a substrate; wherein said precursor is not significantly fragmented to form said dielectric film with a backbone structure comprised substantially of inorganic groups and organic side groups attached to said backbone structure to form a hybrid of inorganic and organic materials that provide said film having a dielectric constant of less than 4.0 and exhibiting weight loss of less than 2% per hour at 400° C. in nitrogen.
Claim 2
Independent Claim
114 words
A method of fabricating a dielectric film on a semiconductor or integrated circuit having a low dielectric constant comprising the steps of: providing at least one organosilicon precursor; depositing by chemical vapor deposition where said precursor reacts and deposits said dielectric film on the surface of a substrate; wherein said precursor is not significantly fragmented to form said dielectric film with a backbone structure comprised substantially of inorganic groups and organic side groups attached to said backbone structure to form a hybrid of inorganic and organic materials that provide said film having a dielectric constant of less than 4.0 and exhibiting weight loss of less than 2% per hour at 400° C. in nitrogen.
Claim 3
Dependent Claim
16 words
The method of claim 1 wherein the step of depositing is by plasma chemical vapor deposition.
Claim 4
Dependent Claim
16 words
The method of claim 1 wherein said dielectric film has a dielectric constant less than 3.0.
Claim 5
Dependent Claim
19 words
The method of claim 1 wherein the backbone structure is further comprised substantially of cyclic Si--O--Si groups and chains.
Claim 6
Dependent Claim
20 words
The method of claim 1 wherein the backbone structure is further comprised substantially of cyclic Si--N--Si groups and inorganic chains.
Claim 7
Dependent Claim
19 words
The method of claim 4 wherein the cyclic groups are comprised of rings, balls, cubes, or any combination thereof.
Claim 8
Dependent Claim
12 words
The method of claim 1 wherein the precursor is a cyclic organosilicon.
Claim 9
Dependent Claim
30 words
The method of claim 1 wherein the precursor is selected form the group consisting of siloxanes, fluorosiloxanes, cyclosiloxanes, fluorine containing cyclosiloxanes, organosilazanes, fluorosilazanes, cyclic organosilazanes, cyclo fluorosilazanes, and mixtures thereof.
Claim 10
Dependent Claim
63 words
The method of claim 1 wherein the precursor has the formula of: ##STR4## where the precursor is linear or branched and; n is 1 to (2m+4); m is 0 to 4; X is selected from the group consisting of H and the halogens; and R is selected from the group consisting of aliphatic, olefinic and aromatic hydrocarbons, and aliphatic, olefinic and aromatic fluorocarbons.
Claim 11
Dependent Claim
56 words
The method of claim 1 wherein the precursor has the formula of: ##STR5## where n is 1 to 2m; m is 3 to 10; X is selected from the group consisting of H and the halogens; and R is selected from the group consisting of aliphatic, olefinic and aromatic hydrocarbons, and aliphatic, olefinic and aromatic fluorocarbons.
Claim 12
Dependent Claim
63 words
The method of claim 1, wherein the precursor has the formula of: ##STR6## where the precursor is linear or branched; and n is 1 to (3m+4); m is 1 to 4; X is selected from the group consisting of H and the halogens; and R is selected from the group consisting of aliphatic, olefinic and aromatic hydrocarbons, and aliphatic, olefinic and aromatic fluorocarbons.
Claim 13
Dependent Claim
56 words
The method of claim 1 wherein the precursor has the formula of: ##STR7## where n is 1 to 3m; m is 3 to 10; X is selected from the group consisting of H and the halogens; and R is selected from the group consisting of aliphatic, olefinic and aromatic hydrocarbons, and aliphatic, olefinic and aromatic fluorocarbons.
Claim 14
Dependent Claim
10 words
The method of claim 1 wherein the precursor is octamethylcyclotetrasiloxane.
Claim 15
Dependent Claim
26 words
The method of claim 1 wherein the organic side groups contain carbon atoms and the carbon to carbon bonding in said organic side groups is minimized.
Claim 16
Dependent Claim
17 words
The method of claim 1 further comprising the step of: providing oxygen gas mixed with said precursor.
Claim 17
Dependent Claim
34 words
The method of claim 1 further comprising the step of: depositing at least one layer of silicon oxide insitu either atop of and/or below said dielectric film to form a film having multiple layers.
Claim 18
Dependent Claim
42 words
The method of claim 1 where the organosilicon precursor is a cyclic siloxane selected from the group consisting of octamethylcyclotetrasiloxane (OMCTS), hexa methyl cyclo trisiloxane, hexa phenyl cyclo trisiloxane, octa phenyl cyclo tetrasiloxane, 1,3,5-trimethyl-1,3,5-tris-3,3,3-trifluoropropyl cyclo trisiloxane, fluorine containing cyclosiloxanes, and combinations thereof.
Claim 19
Independent Claim
126 words
A method of depositing a low dielectric film on a semiconductor or integrated circuit by plasma chemical vapor deposition, comprising the steps of: positioning a substrate within a process chamber; injecting at least one organosilicon precursor into said process chamber; applying power into said process chamber to generate a plasma; depositing said dielectric film on the surface of the substrate wherein the structure of the dielectric film retains in part the structure of the precursor, said dielectric film having a backbone structure comprised substantially of cyclic and linear Si--O--Si groups and organic side groups attached to said backbone structure that provide said film having a dielectric constant of less than 4.0 and exhibiting weight loss of less than 2% per hour at 400° C. in nitrogen.
Claim 20
Independent Claim
126 words
A method of depositing a low dielectric film on a semiconductor or integrated circuit by plasma chemical vapor deposition, comprising the steps of: positioning a substrate within a process chamber; injecting at least one organosilicon precursor into said process chamber; applying power into said process chamber to generate a plasma; depositing said dielectric film on the surface of the substrate wherein the structure of the dielectric film retains in part the structure of the precursor, said dielectric film having a backbone structure comprised substantially of cyclic and linear Si--O--Si groups and organic side groups attached to said backbone structure that provide said film having a dielectric constant of less than 4.0 and exhibiting weight loss of less than 2% per hour at 400° C. in nitrogen.
Claim 21
Dependent Claim
16 words
The method of claim 18 wherein said dielectric film has a dielectric constant less than 3.0.
Claim 22
Dependent Claim
12 words
The method of claim 18 wherein the precursor is a cyclic organosilicon.
Claim 23
Dependent Claim
29 words
The method of claim 18 wherein the precursor is selected from the group consisting of siloxanes, fluorosiloxanes, cyclosiloxanes, fluorine containing cyclosiloxanes, organosilazanes, cyclo silazanes, fluorosilazanes, cyclofluorosilazanes and mixtures thereof.
Claim 24
Dependent Claim
56 words
The method of claim 18 wherein the precursor has the formula of: ##STR8## where n is 1 to 2m; m is 3 to 10; X is selected from the group consisting of H and the halogens; nd R is selected from the group consisting of aliphatic, olefinic and aromatic hydrocarbons, and aliphatic, olefinic and aromatic fluorocarbons.
Claim 25
Dependent Claim
56 words
The method of claim 18 wherein the precursor has the formula of: ##STR9## where n is 1 to 3m; m is 3 to 10; X is selected from the group consisting of H and the halogens; and R is selected from the group consisting of aliphatic, olefinic and aromatic hydrocarbons, and aliphatic, olefinic and aromatic fluorocarbons.
Claim 26
Dependent Claim
10 words
The method of claim 18 wherein the precursor is octamethylcyclotetrasiloxane.
Claim 27
Dependent Claim
38 words
The method of claim 18 wherein said plasma chamber includes a plasma source, and the exposing further comprising exposing the precursor to said plasma at a power density in the range of 200 to 20,000 W/ft 3 .
Claim 28
Dependent Claim
34 words
The method of claim 18 further comprising the step of: depositing at least one layer of silicon oxide insitu either atop of and/or below said dielectric film to form a film having multiple layers.
Claim 29
Dependent Claim
26 words
The method of claim 18 wherein the organic side groups contain carbon atoms and the carbon to carbon bonding in said organic side groups is minimized.
Claim 30
Dependent Claim
18 words
The method of claim 18 further comprising the step of: providing oxygen gas mixed with said organosilicon precursor.
Claim 31
Dependent Claim
18 words
The method of claim 18 further comprising the step of: introducing a diluent gas into said process chamber.
Claim 32
Dependent Claim
16 words
The method of claim 18 further comprising the step of: introducing helium into said process chamber.
Claim 33
Dependent Claim
31 words
The method of claim 18 wherein the ratio of the Si in the inorganic chains to Si in the cyclic Si--O--Si groups is in the range of approximately 10:1 to 0.1:1.
Claim 34
Dependent Claim
30 words
The method of claim 18 wherein said dielectric film has a backbone structure comprised substantially of cyclic and linear Si--N--Si groups and organic side groups attached to said backbone structure.
Claim 35
Dependent Claim
19 words
The method of claim 18 wherein the cyclic groups are comprised of rings, balls, cubes, or any combination thereof.
Claim 36
Dependent Claim
42 words
The method of claim 18 where the organosilicon precursor is a cyclic siloxane selected from the group consisting of octamethylcyclotetrasiloxane (OMCTS), hexa methyl cyclo trisiloxane, hexa phenyl cyclo trisiloxane, octa phenyl cyclo tetrasiloxane, 1,3,5-trimethyl-1,3,5-tris-3,3,3-trifluoropropyl cyclo trisiloxane, fluorine containing cyclosiloxanes, and combinations thereof.
References Cited (Backward Citations)
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