Vertical cavity surface emitting laser driving circuit

Claim 2

A vertical cavity surface emitting laser (VCSEL) driving circuit wherein the VCSEL is flip-chip bonded to a CMOS substrate CHARACTERIZED IN THAT: the VCSEL is made operational by a high-speed current shunt modulating a current flowing through the VCSEL.

Claim 3

The VCSEL driving circuit according to claim 1 wherein the VCSEL is modulated at a rate in excess of 1 Gbit/sec.

Claim 4

The VCSEL driving circuit according to claim 1 wherein said high-speed current shunt is an NMOS transistor electrically connected in parallel with the VCSEL.

Claim 5

The VCSEL driving circuit according to claim 3 further comprising: a PMOS source transistor electrically connected to the VCSEL such that the operational current is supplied to the VCSEL.

Claim 6

A vertical cavity surface emitting laser (VCSEL) driver circuit comprising: a VCSEL, flip-chip bonded to a substrate; a source transistor, electrically connected to the VCSEL such that an operating current is provided to the VCSEL; and a shunt transistor, electrically connected to the VCSEL and the source transistor such that the VCSEL operating current is shunted away from the VCSEL through the action of the shunt transistor.

Claim 7

A vertical cavity surface emitting laser (VCSEL) driver circuit comprising: a VCSEL, flip-chip bonded to a substrate; a source transistor, electrically connected to the VCSEL such that an operating current is provided to the VCSEL; and a shunt transistor, electrically connected to the VCSEL and the source transistor such that the VCSEL operating current is shunted away from the VCSEL through the action of the shunt transistor.

Claim 8

The VCSEL driver circuit according to claim 5 wherein the source transistor is a PMOS source transistor under the control of a gate voltage signal, V tune such that when sufficient gate voltage is applied to the source transistor, the VCSEL operating current is provided to the VCSEL.

Claim 9

The VCSEL driver circuit according to claim 6 wherein the shunt transistor is an NMOS transistor under the control of a gate voltage signal V in such that when sufficient gate voltage is applied to the shunt transistor, the VCSEL operating current is shunted from the VCSEL thereby modulating the VCSEL power output.

Claim 10

A vertical cavity surface emitting laser (VCSEL) driver circuit comprising: a VCSEL, flip-chip bonded to a substrate; means for providing an operating current to the VCSEL; and means for shunting the VCSEL operating current from the VCSEL such that the VCSEL operating current is modulated and a power output from the VCSEL is modulated.

Claim 11

A vertical cavity surface emitting laser (VCSEL) driver circuit comprising: a VCSEL, flip-chip bonded to a substrate; means for providing an operating current to the VCSEL; and means for shunting the VCSEL operating current from the VCSEL such that the VCSEL operating current is modulated and a power output from the VCSEL is modulated.

Claim 12

The VCSEL driver circuit according to claim 8 wherein the operating current providing means is a PMOS transistor electrically connected to a current source and the VCSEL and under the operative control of an applied gate voltage.

Claim 13

The VCSEL driver circuit according to claim 9 wherein the current shunting means is an NMOS transistor electrically connected in parallel to the VCSEL and the operating current providing means.

Claim 14

In a vertical cavity surface emitting laser (VCSEL) driver circuit comprising: a VCSEL, flip-chip bonded to a substrate; a source transistor having an input electrically connected to a current source and an output electrically connected to the VCSEL under the control of an applied gate voltage; and a shunt transistor under the control of an applied gate voltage and electrically connected in parallel to the VCSEL and the output of the source transistor; a method for operating the driver circuit, the method comprising the steps of: applying an applied gate voltage to the source transistor such that an operating current is supplied to the VCSEL; and applying an applied gate voltage to the shunt transistor such that the operating current is shunted from the VCSEL thereby modulating its output.

Claim 15

In a vertical cavity surface emitting laser (VCSEL) driver circuit comprising: a VCSEL, flip-chip bonded to a substrate; a source transistor having an input electrically connected to a current source and an output electrically connected to the VCSEL under the control of an applied gate voltage; and a shunt transistor under the control of an applied gate voltage and electrically connected in parallel to the VCSEL and the output of the source transistor; a method for operating the driver circuit, the method comprising the steps of: applying an applied gate voltage to the source transistor such that an operating current is supplied to the VCSEL; and applying an applied gate voltage to the shunt transistor such that the operating current is shunted from the VCSEL thereby modulating its output.