US6066535A
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Method of manufacturing semiconductor device
Assignee: UMC Japan Co Ltd
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Filing: 1999-08-05
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Granted: 2000-05-23
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Expires: 2019-08-05
Abstract
Abstract A gate electrode comprises a conductive gate electrode body and gate side walls. The channel region beneath the gate electrode has an NUDC structure having a p - impurity region and p + impurity regions. The p - impurity region is formed before the gate electrode body. After the formation of the gate electrode body, the p + impurity regions are formed by ion implantation before the gate side walls. The ion implantation is carried out perpendicular to the substrate so that the implanted ions will not reach further around the center of the channel region. Of the gate oxide films over the channel region, the thickness of the gate oxide films at both ends of the channel region is thinner than that of the gate oxide film in the middle of the channel length so as to suppress lowering of the current drivability.
Inventors
- 👤 Ichiro Murai
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 03:53
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/01; H10D64/013; H10D64/01302; H10D64/01332; H10D64/01336; H10D64/01346; H10D30/00; H10D30/01; H10D30/021; H10D30/0223; H10D62/00; H10D62/10; H10D62/17; H10D62/213; H10D62/221; H10D62/235; H10D62/299; H10D62/307; H10D64/01304; H10D64/01322; H10D64/01324; H10D64/0134; H10D64/20; H10D64/27; H10D64/311; H10D64/411; H10D64/511; H10D64/514; H10D64/516; H10P; H10P30/00; H10P30/20; H10P30/22; H10P30/221; H10P30/222
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
276 words
A method of manufacturing a semiconductor device wherein: a MOS device is manufactured by forming a gate electrode on a semiconductor substrate of one conductivity type via a gate insulator film, comprising: a) a step to form a first gate insulator film of a certain thickness on said semiconductor substrate; b) a step to form a first impurity region of the one conductivity type with a certain impurity concentration in proximity to the surface of said semiconductor substrate; c) a step to selectively form a conductive gate electrode body on said first gate insulator film; d) a step to form a second impurity region of the one conductivity type in proximity to said semiconductor substrate surface other than the region where said gate electrode body is formed in a self-aligned manner with said gate electrode body wherein the impurity concentration thereof is different from that of said first impurity region; e) a step to remove said first gate insulator film on said semiconductor substrate except the region where said gate electrode body is formed after said second impurity region is formed and to form a second gate insulator film where said first gate insulator film is removed, whose thickness is different from that of said first gate insulator film; f) a step to form conductive gate side walls at the sides of said gate electrode body; and g) a step to form an impurity region of the other conductivity type as a source-drain region by ion implantation of impurity of the other conductivity type into said semiconductor substrate in a self-aligned manner with said gate electrode comprising said gate electrode body and said gate side walls.
Claim 2
Independent Claim
276 words
A method of manufacturing a semiconductor device wherein: a MOS device is manufactured by forming a gate electrode on a semiconductor substrate of one conductivity type via a gate insulator film, comprising: a) a step to form a first gate insulator film of a certain thickness on said semiconductor substrate; b) a step to form a first impurity region of the one conductivity type with a certain impurity concentration in proximity to the surface of said semiconductor substrate; c) a step to selectively form a conductive gate electrode body on said first gate insulator film; d) a step to form a second impurity region of the one conductivity type in proximity to said semiconductor substrate surface other than the region where said gate electrode body is formed in a self-aligned manner with said gate electrode body wherein the impurity concentration thereof is different from that of said first impurity region; e) a step to remove said first gate insulator film on said semiconductor substrate except the region where said gate electrode body is formed after said second impurity region is formed and to form a second gate insulator film where said first gate insulator film is removed, whose thickness is different from that of said first gate insulator film; f) a step to form conductive gate side walls at the sides of said gate electrode body; and g) a step to form an impurity region of the other conductivity type as a source-drain region by ion implantation of impurity of the other conductivity type into said semiconductor substrate in a self-aligned manner with said gate electrode comprising said gate electrode body and said gate side walls.
Claim 3
Dependent Claim
58 words
A method of manufacturing the semiconductor device according to claim 1 wherein: the impurity concentration of said second impurity region of the one conductivity type is higher than that of said first impurity region of the one conductivity type; and the thickness of said second gate insulator film is thinner than that of said first gate insulator film.
Claim 4
Independent Claim
277 words
A method of manufacturing a semiconductor device wherein: a MOS device is manufactured by forming a gate electrode on a semiconductor substrate of one conductivity type via a gate insulator film, comprising: a) a step to form a first gate insulator film of a certain thickness on said semiconductor substrate; b) a step to form a first impurity region of the one conductivity type with a certain impurity concentration in proximity to the surface of said semiconductor substrate; c) a step to selectively form a conductive gate electrode body on said first gate insulator film; d) a step to remove said first gate insulator film on said semiconductor substrate except the region where the gate electrode body is formed and to form a second gate insulator film where said first gate insulator film is removed, whose thickness is different from that of said first gate insulator film; e) a step after said second gate insulator film is formed, to form a second impurity region of the one conductivity type in proximity to said semiconductor substrate surface other than the region where said gate electrode body is formed in a self-aligned manner with said gate electrode body wherein the impurity concentration thereof is different from that of said first impurity region; f) a step to form conductive gate side walls at the sides of said gate electrode body; and g) a step to form an impurity region of the other conductivity type as a source-drain region by ion implantation of impurity of the other conductivity type into said semiconductor substrate in a self-aligned manner with said gate electrode comprising said gate electrode body and said gate side walls.
Claim 5
Independent Claim
277 words
A method of manufacturing a semiconductor device wherein: a MOS device is manufactured by forming a gate electrode on a semiconductor substrate of one conductivity type via a gate insulator film, comprising: a) a step to form a first gate insulator film of a certain thickness on said semiconductor substrate; b) a step to form a first impurity region of the one conductivity type with a certain impurity concentration in proximity to the surface of said semiconductor substrate; c) a step to selectively form a conductive gate electrode body on said first gate insulator film; d) a step to remove said first gate insulator film on said semiconductor substrate except the region where the gate electrode body is formed and to form a second gate insulator film where said first gate insulator film is removed, whose thickness is different from that of said first gate insulator film; e) a step after said second gate insulator film is formed, to form a second impurity region of the one conductivity type in proximity to said semiconductor substrate surface other than the region where said gate electrode body is formed in a self-aligned manner with said gate electrode body wherein the impurity concentration thereof is different from that of said first impurity region; f) a step to form conductive gate side walls at the sides of said gate electrode body; and g) a step to form an impurity region of the other conductivity type as a source-drain region by ion implantation of impurity of the other conductivity type into said semiconductor substrate in a self-aligned manner with said gate electrode comprising said gate electrode body and said gate side walls.
Claim 6
Dependent Claim
58 words
A method of manufacturing the semiconductor device according to claim 3 wherein: the impurity concentration of said second impurity region of the one conductivity type is higher than that of said first impurity region of the one conductivity type; and the thickness of said second gate insulator film is thinner than that of said first gate insulator film.
References Cited (Backward Citations)
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