US6060385A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of making an interconnect structure
Assignee: Micron Technology Inc
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Filing: 1997-02-14
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Granted: 2000-05-09
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Expires: 2017-02-14
Abstract
Abstract The present invention comprises a metallization method that forms a three-level interconnect in an electrical circuit. The method comprises providing a substrate assembly and depositing thereon a first dielectric layer thereover. A second dielectric layer is then deposited over the first dielectric layer. The second dielectric layer is patterned and anisotropically etched to form contact corridors. The second dielectric layer is again patterned and etched to form trenches, some of which are immediately above the contact corridors. An electrically conductive material is deposited to fill the contact corridors and trenches, and to leave a portion of the electrically conductive material above the second dielectric layer and directly above both the contact corridors and the trenches. The deposition forms a unitary three-level interconnect having a contiguous trench below a contact corridor below a metal line, where the metal line is above the second dielectric layer. An optional antireflective coating can be deposited to assist in filling the trenches and contact corridor. Finally, patterning and etching of the electrically conductive material above the second dielectric layer forms metal lines for the electrical circuit.
Inventors
- 👤 John H. Givens
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 00:04
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/40; H10W20/01; H10W20/031; H10W20/056; H10W20/063; H10W20/0633; H10W20/071; H10W20/081; H10W20/084; H10W20/41; H10W20/425; H10W20/44; H10W20/4403; H10W20/4405; H10W20/4407; Y; Y10; Y10S; Y10S438/00; Y10S438/942; Y10S438/948; Y10S438/952
Claims Analysis
Total Claims: 45
Claim 1
Independent Claim
249 words
A method of forming an interconnect structure comprising: forming a first dielectric layer upon a substrate assembly; forming a second dielectric layer upon said first dielectric layer; forming a first recess extending through said second dielectric layer and into said first dielectric layer; forming a second recess extending through said first recess and into said second dielectric layer, said second recess having a first trench defined by said second dielectric layer and a first contact corridor defined by said first dielectric layer, said first contact corridor having a first maximum width, said first trench having a second maximum width not less than the first maximum width; and forming a first metal layer filling said first contact corridor and said first trench, said first metal layer extending from a top surface above the second dielectric layer through said first trench and terminating at a bottom surface thereof within said first contact corridor, said first metal layer having a first portion thereof extending from the first trench and above the second dielectric layer with a third maximum width not less than the second maximum width, wherein: said first dielectric layer is composed of a material that is dissimilar from a material from which said second dielectric layer is composed; and forming said second recess extending through said first recess and into said second dielectric layer is accomplished by etching said second dielectric layer with an etch recipe that is selective to the material from which said first dielectric layer is composed.
Claim 2
Independent Claim
249 words
A method of forming an interconnect structure comprising: forming a first dielectric layer upon a substrate assembly; forming a second dielectric layer upon said first dielectric layer; forming a first recess extending through said second dielectric layer and into said first dielectric layer; forming a second recess extending through said first recess and into said second dielectric layer, said second recess having a first trench defined by said second dielectric layer and a first contact corridor defined by said first dielectric layer, said first contact corridor having a first maximum width, said first trench having a second maximum width not less than the first maximum width; and forming a first metal layer filling said first contact corridor and said first trench, said first metal layer extending from a top surface above the second dielectric layer through said first trench and terminating at a bottom surface thereof within said first contact corridor, said first metal layer having a first portion thereof extending from the first trench and above the second dielectric layer with a third maximum width not less than the second maximum width, wherein: said first dielectric layer is composed of a material that is dissimilar from a material from which said second dielectric layer is composed; and forming said second recess extending through said first recess and into said second dielectric layer is accomplished by etching said second dielectric layer with an etch recipe that is selective to the material from which said first dielectric layer is composed.
Claim 3
Dependent Claim
60 words
A method of forming an interconnect structure as defined in claim 1, wherein forming a first metal layer further comprises: planarizing said top surface on said first portion of said first metal layer extending from the first trench and above the second dielectric layer; and patterning and etching said top surface on said first portion of said first metal layer.
Claim 4
Dependent Claim
37 words
A method of forming an interconnect structure as defined in claim 2, further comprising forming an antireflective coating upon said first metal layer after planarizing said top surface on said first portion of said first metal layer.
Claim 5
Dependent Claim
47 words
A method of forming an interconnect structure as defined in claim 1, wherein said first metal layer is composed of a material selected from the group consisting of doped polysilicon, W, aluminum alloys, AlCu, AlSi, AlSiCu, AlTi, AlAg, AlAu, AlMn, AlGe, AlW, AlCuGe, AlNi, and their combinations.
Claim 6
Dependent Claim
32 words
A method of forming an interconnect structure as defined in claim 1, wherein said first metal layer has a constant electrical resistance from the top surface thereof to the bottom surface thereof.
Claim 7
Dependent Claim
50 words
A method of forming an interconnect structure as defined in claim 1, wherein forming said first dielectric layer upon said substrate assembly further comprises planarizing a top surface upon said first dielectric layer, and wherein said second dielectric layer is formed upon said top surface of said first dielectric layer.
Claim 8
Dependent Claim
58 words
A method of forming an interconnect structure as defined in claim 1, wherein forming said second dielectric layer upon said first dielectric layer further comprises planarizing a top surface upon said second dielectric layer, and wherein said forming said first metal layer further comprising forming said first metal layer upon said top surface of said second dielectric layer.
Claim 9
Dependent Claim
42 words
A method of forming an interconnect structure as defined in claim 1, wherein said first dielectric layer is formed upon a silicon surface of said substrate assembly, said first dielectric layer being composed of a material having a silicon impurity getterer property.
Claim 10
Dependent Claim
35 words
A method of forming an interconnect structure as defined in claim 1, wherein the first metal layer is a unitary structure free of metal-to-metal interfaces between the top surface thereof and the bottom surface thereof.
Claim 11
Dependent Claim
50 words
A method of forming an interconnect structure as defined in claim 1, wherein said substrate assembly comprises a gate structure, and wherein said first contact corridor terminates at a gate surface upon said gate structure, said bottom surface of said first metal layer is in contact with said gate surface.
Claim 12
Dependent Claim
27 words
A method of forming an interconnect structure as defined in claim 1, wherein the bottom surface of said first metal layer is situated upon said substrate assembly.
Claim 13
Dependent Claim
158 words
A method of forming an interconnect structure as defined in claim 1, further comprising: forming a third recess extending through said first dielectric layer and into said second dielectric layer; forming a fourth recess extending through said second recess and into said second dielectric layer, said fourth recess having a second trench defined by said second dielectric layer and a second contact corridor defined by said first dielectric layer, said second contact corridor having a first maximum width, said second trench having a second maximum width not less than the first maximum width; and forming a second metal layer filling said second contact corridor and said second trench, said second metal layer extending from a top surface not above the second dielectric layer, through said second trench, and terminating at a bottom surface thereof within said second contact corridor, said second metal layer having a constant electrical resistance from the top surface thereof to the bottom surface thereof.
Claim 14
Dependent Claim
30 words
A method of forming an interconnect structure as defined in claim 12, wherein the bottom surface of each said first and second metal layers is situated upon said substrate assembly.
Claim 15
Dependent Claim
49 words
A method of forming an interconnect structure as defined in claim 12, wherein said first and second metal layers are composed of a material selected from the group consisting of doped polysilicon, W, aluminum alloys, AlCu, AlSi, AlSiCu, AlTi, AlAg, AlAu, AlMn, AlGe, AlW, AlCuGe, AlNi, and their combinations.
Claim 16
Dependent Claim
112 words
A method of forming an interconnect structure as defined in claim 12, further comprising: forming a third trench defined by said second dielectric layer and having a second maximum width extending through said second dielectric layer and terminating upon a top surface of said first dielectric layer; and forming a third metal layer extending from a top surface thereof not above the second dielectric layer, through said third trench, and terminating at a bottom surface thereof upon said top surface of said first dielectric layer, said third metal layer filling said third trench, said third metal layer having a constant electrical resistance from the top surface thereof to the bottom surface thereof.
Claim 17
Independent Claim
488 words
A method of forming an interconnect structure comprising: depositing a first dielectric layer upon a substrate assembly; depositing a second dielectric layer upon said first dielectric layer, wherein said first dielectric layer is substantially composed of a material that is dissimilar from a material from which said second dielectric layer is substantially composed; patterning said second dielectric layer with a first mask; etching said first and second dielectric layers to form: a first recess extending through said first dielectric layer and into said second dielectric layer; a third recess extending through said first dielectric layer and into said second dielectric layer; patterning said second dielectric layer with a second mask; etching said second dielectric layer with an etch recipe substantially selective to said material from which said first dielectric layer is substantially composed to form: a second recess extending through said first recess and into said second dielectric layer, said second recess having a first trench defined by said second dielectric layer and a first contact corridor defined by said first dielectric layer, said first contact corridor having a first maximum width, said first trench having a second maximum width substantially not less than the first maximum width; and a fourth recess extending through said second recess and into said second dielectric layer, said fourth recess having a second trench defined by said second dielectric layer and a second contact corridor defined by said first dielectric layer, said second contact corridor having a first maximum width, said second trench having a second maximum width substantially not less than the first maximum width; depositing a metal material upon said second dielectric layer and substantially filling said first and second contact corridors, and said first and second trenches; patterning said metal material with a third mask; etching said metal material with an etch recipe substantially selective to said materials of said first and second dielectric layers to form from said metal material: a first metal layer substantially filling said first contact corridor and said first trench, said first metal layer extending from a top surface above the second dielectric layer through said first trench and terminating at a bottom surface thereof within said first contact corridor, said first metal layer having a first portion thereof extending from the first trench and above the second dielectric layer with a third maximum width substantially not less than the second maximum width of said first trench, said first metal layer having a substantially constant electrical resistance from the top surface thereof to the bottom surface thereof; and a second metal layer substantially filling said second contact corridor and said second trench, said second metal layer extending from a top surface substantially not above the second dielectric layer, through said second trench, and terminating at a bottom surface thereof within said second contact corridor, said second metal layer having a substantially constant electrical resistance from the top surface thereof to the bottom surface thereof.
Claim 18
Independent Claim
488 words
A method of forming an interconnect structure comprising: depositing a first dielectric layer upon a substrate assembly; depositing a second dielectric layer upon said first dielectric layer, wherein said first dielectric layer is substantially composed of a material that is dissimilar from a material from which said second dielectric layer is substantially composed; patterning said second dielectric layer with a first mask; etching said first and second dielectric layers to form: a first recess extending through said first dielectric layer and into said second dielectric layer; a third recess extending through said first dielectric layer and into said second dielectric layer; patterning said second dielectric layer with a second mask; etching said second dielectric layer with an etch recipe substantially selective to said material from which said first dielectric layer is substantially composed to form: a second recess extending through said first recess and into said second dielectric layer, said second recess having a first trench defined by said second dielectric layer and a first contact corridor defined by said first dielectric layer, said first contact corridor having a first maximum width, said first trench having a second maximum width substantially not less than the first maximum width; and a fourth recess extending through said second recess and into said second dielectric layer, said fourth recess having a second trench defined by said second dielectric layer and a second contact corridor defined by said first dielectric layer, said second contact corridor having a first maximum width, said second trench having a second maximum width substantially not less than the first maximum width; depositing a metal material upon said second dielectric layer and substantially filling said first and second contact corridors, and said first and second trenches; patterning said metal material with a third mask; etching said metal material with an etch recipe substantially selective to said materials of said first and second dielectric layers to form from said metal material: a first metal layer substantially filling said first contact corridor and said first trench, said first metal layer extending from a top surface above the second dielectric layer through said first trench and terminating at a bottom surface thereof within said first contact corridor, said first metal layer having a first portion thereof extending from the first trench and above the second dielectric layer with a third maximum width substantially not less than the second maximum width of said first trench, said first metal layer having a substantially constant electrical resistance from the top surface thereof to the bottom surface thereof; and a second metal layer substantially filling said second contact corridor and said second trench, said second metal layer extending from a top surface substantially not above the second dielectric layer, through said second trench, and terminating at a bottom surface thereof within said second contact corridor, said second metal layer having a substantially constant electrical resistance from the top surface thereof to the bottom surface thereof.
Claim 19
Independent Claim
587 words
A method of forming an interconnect structure comprising: depositing a first dielectric layer upon a substrate assembly; depositing a second dielectric layer upon said first dielectric layer, wherein said first dielectric layer is substantially composed of a material that is dissimilar from a material from which said second dielectric layer is substantially composed; patterning said second dielectric layer with a first mask; etching said first and second dielectric layers to form: a first recess extending through said first dielectric layer and into said second dielectric layer; a third recess extending through said first dielectric layer and into said second dielectric layer; patterning said second dielectric layer with a second mask; etching said second dielectric layer with an etch recipe substantially selective to said material from which said first dielectric layer is substantially composed to form: a second recess extending through said first recess and into said second dielectric layer, said second recess having a first trench defined by said second dielectric layer and a first contact corridor defined by said first dielectric layer, said first contact corridor having a first maximum width, said first trench having a second maximum width substantially not less than the first maximum width; a fourth recess extending through said second recess and into said second dielectric layer, said fourth recess having a second trench defined by said second dielectric layer and a second contact corridor defined by said first dielectric layer, said second contact corridor having a first maximum width, said second trench having a second maximum width substantially not less than the first maximum width; and a third trench defined by said second dielectric layer and having a second maximum width extending through said second dielectric layer and terminating upon a top surface of said first dielectric layer; depositing a metal material upon said second dielectric layer and substantially filling said first and second contact corridors, and said first, second, and third trenches; patterning said metal material with a third mask; etching said metal material with an etch recipe substantially selective to said materials of said first and second dielectric layers to form from said metal material: a first metal layer substantially filling said first contact corridor and said first trench, said first metal layer extending from a top surface above the second dielectric layer through said first trench and terminating at a bottom surface thereof within said first contact corridor, said first metal layer having a first portion thereof extending from the first trench and above the second dielectric layer with a third maximum width substantially not less than the second maximum width of said first trench, said first metal layer having a substantially constant electrical resistance from the top surface thereof to the bottom surface thereof; a second metal layer substantially filling said second contact corridor and said second trench, said second metal layer extending from a top surface substantially not above the second dielectric layer, through said second trench, and terminating at a bottom surface thereof within said second contact corridor, said second metal layer having a substantially constant electrical resistance from the top surface thereof to the bottom surface thereof; and a third metal layer extending from a top surface thereof substantially not above the second dielectric layer, through said third trench, and terminating at a bottom surface thereof upon said top surface of said first dielectric layer, said third metal layer substantially filling said third trench, said third metal layer having a substantially constant electrical resistance from the top surface thereof to the bottom surface thereof.
Claim 20
Independent Claim
587 words
A method of forming an interconnect structure comprising: depositing a first dielectric layer upon a substrate assembly; depositing a second dielectric layer upon said first dielectric layer, wherein said first dielectric layer is substantially composed of a material that is dissimilar from a material from which said second dielectric layer is substantially composed; patterning said second dielectric layer with a first mask; etching said first and second dielectric layers to form: a first recess extending through said first dielectric layer and into said second dielectric layer; a third recess extending through said first dielectric layer and into said second dielectric layer; patterning said second dielectric layer with a second mask; etching said second dielectric layer with an etch recipe substantially selective to said material from which said first dielectric layer is substantially composed to form: a second recess extending through said first recess and into said second dielectric layer, said second recess having a first trench defined by said second dielectric layer and a first contact corridor defined by said first dielectric layer, said first contact corridor having a first maximum width, said first trench having a second maximum width substantially not less than the first maximum width; a fourth recess extending through said second recess and into said second dielectric layer, said fourth recess having a second trench defined by said second dielectric layer and a second contact corridor defined by said first dielectric layer, said second contact corridor having a first maximum width, said second trench having a second maximum width substantially not less than the first maximum width; and a third trench defined by said second dielectric layer and having a second maximum width extending through said second dielectric layer and terminating upon a top surface of said first dielectric layer; depositing a metal material upon said second dielectric layer and substantially filling said first and second contact corridors, and said first, second, and third trenches; patterning said metal material with a third mask; etching said metal material with an etch recipe substantially selective to said materials of said first and second dielectric layers to form from said metal material: a first metal layer substantially filling said first contact corridor and said first trench, said first metal layer extending from a top surface above the second dielectric layer through said first trench and terminating at a bottom surface thereof within said first contact corridor, said first metal layer having a first portion thereof extending from the first trench and above the second dielectric layer with a third maximum width substantially not less than the second maximum width of said first trench, said first metal layer having a substantially constant electrical resistance from the top surface thereof to the bottom surface thereof; a second metal layer substantially filling said second contact corridor and said second trench, said second metal layer extending from a top surface substantially not above the second dielectric layer, through said second trench, and terminating at a bottom surface thereof within said second contact corridor, said second metal layer having a substantially constant electrical resistance from the top surface thereof to the bottom surface thereof; and a third metal layer extending from a top surface thereof substantially not above the second dielectric layer, through said third trench, and terminating at a bottom surface thereof upon said top surface of said first dielectric layer, said third metal layer substantially filling said third trench, said third metal layer having a substantially constant electrical resistance from the top surface thereof to the bottom surface thereof.
Claim 21
Dependent Claim
39 words
A method of forming an interconnect structure as defined in claim 17, wherein the first, second, and third metal layer each is a unitary structure free of metal-to-metal interfaces between the top surface thereof and the bottom surface thereof.
Claim 22
Dependent Claim
72 words
A method of forming an interconnect structure as defined in claim 17, wherein providing a substrate assembly further comprises forming a gate structure situated on said substrate assembly, wherein said first contact corridor terminates at a gate surface upon said gate structure, said bottom surface of said first metal layer being in contact with said gate surface, and the bottom surface of said second metal layer is situated upon said substrate assembly.
Claim 23
Dependent Claim
47 words
A method of forming an interconnect structure as defined in claim 17, wherein said metal material is substantially composed of a material selected from the group consisting of doped polysilicon, W, aluminum alloys, AlCu, AlSi, AlSiCu, AlTi, AlAg, AlAu, AlMn, AlGe, AlW, AlCuGe, AlNi, and their combinations.
Claim 24
Independent Claim
205 words
A method of forming an interconnect structure comprising: forming a first dielectric layer upon a substrate assembly; forming a second dielectric layer upon said first dielectric layer; planarizing a top surface upon said second dielectric layer; forming a first recess extending through said second dielectric layer and into said first dielectric layer; forming a second recess extending through said first recess and into said second dielectric layer, said second recess having a first trench defined by said second dielectric layer and a first contact corridor defined by said first dielectric layer, said first contact corridor having a first maximum width, said first trench having a second maximum width not less than the first maximum width; and forming a first metal layer that is upon said top surface of said second dielectric layer and that fills said first contact corridor and said first trench, said first metal layer extending from a top surface above the second dielectric layer through said first trench and terminating at a bottom surface thereof within said first contact corridor, said first metal layer having a first portion thereof extending from the first trench and above the second dielectric layer with a third maximum width not less than the second maximum width.
Claim 25
Independent Claim
205 words
A method of forming an interconnect structure comprising: forming a first dielectric layer upon a substrate assembly; forming a second dielectric layer upon said first dielectric layer; planarizing a top surface upon said second dielectric layer; forming a first recess extending through said second dielectric layer and into said first dielectric layer; forming a second recess extending through said first recess and into said second dielectric layer, said second recess having a first trench defined by said second dielectric layer and a first contact corridor defined by said first dielectric layer, said first contact corridor having a first maximum width, said first trench having a second maximum width not less than the first maximum width; and forming a first metal layer that is upon said top surface of said second dielectric layer and that fills said first contact corridor and said first trench, said first metal layer extending from a top surface above the second dielectric layer through said first trench and terminating at a bottom surface thereof within said first contact corridor, said first metal layer having a first portion thereof extending from the first trench and above the second dielectric layer with a third maximum width not less than the second maximum width.
Claim 26
Dependent Claim
26 words
The method as defined in claim 21, said first metal layer has a constant electrical resistance from the top surface thereof to the bottom surface thereof.
Claim 27
Independent Claim
202 words
A method of forming an interconnect structure comprising: forming a first dielectric layer upon a silicon surface of a substrate assembly, said first dielectric layer being composed of a material having a silicon impurity getterer property; forming a second dielectric layer upon said first dielectric layer; forming a first recess extending through said second dielectric layer and into said first dielectric layer; forming a second recess extending through said first recess and into said second dielectric layer, said second recess having a first trench defined by said second dielectric layer and a first contact corridor defined by said first dielectric layer, said first contact corridor having a first maximum width, said first trench having a second maximum width not less than the first maximum width; and forming a first metal layer filling said first contact corridor and said first trench, said first metal layer extending from a top surface above the second dielectric layer through said first trench and terminating at a bottom surface thereof within said first contact corridor, said first metal layer having a first portion thereof extending from the first trench and above the second dielectric layer with a third maximum width not less than the second maximum width.
Claim 28
Independent Claim
202 words
A method of forming an interconnect structure comprising: forming a first dielectric layer upon a silicon surface of a substrate assembly, said first dielectric layer being composed of a material having a silicon impurity getterer property; forming a second dielectric layer upon said first dielectric layer; forming a first recess extending through said second dielectric layer and into said first dielectric layer; forming a second recess extending through said first recess and into said second dielectric layer, said second recess having a first trench defined by said second dielectric layer and a first contact corridor defined by said first dielectric layer, said first contact corridor having a first maximum width, said first trench having a second maximum width not less than the first maximum width; and forming a first metal layer filling said first contact corridor and said first trench, said first metal layer extending from a top surface above the second dielectric layer through said first trench and terminating at a bottom surface thereof within said first contact corridor, said first metal layer having a first portion thereof extending from the first trench and above the second dielectric layer with a third maximum width not less than the second maximum width.
Claim 29
Dependent Claim
26 words
The method as defined in claim 23, said first metal layer has a constant electrical resistance from the top surface thereof to the bottom surface thereof.
Claim 30
Independent Claim
206 words
A method of forming an interconnect structure comprising: forming a first dielectric layer upon a substrate assembly; forming a second dielectric layer upon said first dielectric layer; forming a first recess extending through said second dielectric layer and into said first dielectric layer; forming a second recess extending through said first recess and into said second dielectric layer, said second recess having a first trench defined by said second dielectric layer and a first contact corridor defined by said first dielectric layer, said first contact corridor having a first maximum width, said first trench having a second maximum width not less than the first maximum width; and forming a first metal layer filling said first contact corridor and said first trench, said first metal layer extending from a top surface above the second dielectric layer through said first trench and terminating at a bottom surface thereof within said first contact corridor, said first metal layer having a first portion thereof extending from the first trench and above the second dielectric layer with a third maximum width not less than the second maximum width, wherein the first metal layer is a unitary structure free of metal-to-metal interfaces between the top surface thereof and the bottom surface thereof.
Claim 31
Independent Claim
206 words
A method of forming an interconnect structure comprising: forming a first dielectric layer upon a substrate assembly; forming a second dielectric layer upon said first dielectric layer; forming a first recess extending through said second dielectric layer and into said first dielectric layer; forming a second recess extending through said first recess and into said second dielectric layer, said second recess having a first trench defined by said second dielectric layer and a first contact corridor defined by said first dielectric layer, said first contact corridor having a first maximum width, said first trench having a second maximum width not less than the first maximum width; and forming a first metal layer filling said first contact corridor and said first trench, said first metal layer extending from a top surface above the second dielectric layer through said first trench and terminating at a bottom surface thereof within said first contact corridor, said first metal layer having a first portion thereof extending from the first trench and above the second dielectric layer with a third maximum width not less than the second maximum width, wherein the first metal layer is a unitary structure free of metal-to-metal interfaces between the top surface thereof and the bottom surface thereof.
Claim 32
Dependent Claim
26 words
The method as defined in claim 25, said first metal layer has a constant electrical resistance from the top surface thereof to the bottom surface thereof.
Claim 33
Independent Claim
199 words
A method of forming an interconnect structure comprising: forming a substrate assembly including a gate structure having a gate surface thereon; forming a first dielectric layer upon a substrate assembly; forming a second dielectric layer upon said first dielectric layer; forming a first recess extending through said second dielectric layer and into said first dielectric layer; forming a second recess extending through said first recess and into said second dielectric layer, said second recess having a first trench defined by said second dielectric layer and a first contact corridor defined by said first dielectric layer, said first contact corridor having a first maximum width, said first trench having a second maximum width not less than the first maximum width; and forming a first metal layer filling said first contact corridor and said first trench, said first metal layer extending from a top surface above the second dielectric layer through said first trench and terminating at the gate surface upon the gate structure within said first contact corridor, said first metal layer having a first portion thereof extending from the first trench and above the second dielectric layer with a third maximum width not less than the second maximum width.
Claim 34
Independent Claim
199 words
A method of forming an interconnect structure comprising: forming a substrate assembly including a gate structure having a gate surface thereon; forming a first dielectric layer upon a substrate assembly; forming a second dielectric layer upon said first dielectric layer; forming a first recess extending through said second dielectric layer and into said first dielectric layer; forming a second recess extending through said first recess and into said second dielectric layer, said second recess having a first trench defined by said second dielectric layer and a first contact corridor defined by said first dielectric layer, said first contact corridor having a first maximum width, said first trench having a second maximum width not less than the first maximum width; and forming a first metal layer filling said first contact corridor and said first trench, said first metal layer extending from a top surface above the second dielectric layer through said first trench and terminating at the gate surface upon the gate structure within said first contact corridor, said first metal layer having a first portion thereof extending from the first trench and above the second dielectric layer with a third maximum width not less than the second maximum width.
Claim 35
Dependent Claim
26 words
The method as defined in claim 27, said first metal layer has a constant electrical resistance from the top surface thereof to the bottom surface thereof.
Claim 36
Independent Claim
308 words
A method of forming an interconnect structure comprising: forming a first dielectric layer upon a substrate assembly; forming a second dielectric layer upon said first dielectric layer; forming a first recess extending through said second dielectric layer and into said first dielectric layer; forming a second recess extending through said first recess and into said second dielectric layer, said second recess having a first trench defined by said second dielectric layer and a first contact corridor defined by said first dielectric layer, said first contact corridor having a first maximum width, said first trench having a second maximum width not less than the first maximum width; and forming a first metal layer filling said first contact corridor and said first trench, said first metal layer extending from a top surface above the second dielectric layer through said first trench and terminating at a bottom surface thereof within said first contact corridor, said first metal layer having a first portion thereof extending from the first trench and above the second dielectric layer with a third maximum width not less than the second maximum width; forming a third recess extending through said second dielectric layer and into said first dielectric layer; forming a fourth recess extending through said second recess and into said second dielectric layer, said fourth recess having a second trench defined by said second dielectric layer and a second contact corridor defined by said first dielectric layer, said second contact corridor having a first maximum width, said second trench having a second maximum width not less than the first maximum width; and forming a second metal layer filling said second contact corridor and said second trench, said second metal layer extending from a top surface not above the second dielectric layer, through said second trench, and terminating at a bottom surface thereof within said second contact corridor.
Claim 37
Independent Claim
308 words
A method of forming an interconnect structure comprising: forming a first dielectric layer upon a substrate assembly; forming a second dielectric layer upon said first dielectric layer; forming a first recess extending through said second dielectric layer and into said first dielectric layer; forming a second recess extending through said first recess and into said second dielectric layer, said second recess having a first trench defined by said second dielectric layer and a first contact corridor defined by said first dielectric layer, said first contact corridor having a first maximum width, said first trench having a second maximum width not less than the first maximum width; and forming a first metal layer filling said first contact corridor and said first trench, said first metal layer extending from a top surface above the second dielectric layer through said first trench and terminating at a bottom surface thereof within said first contact corridor, said first metal layer having a first portion thereof extending from the first trench and above the second dielectric layer with a third maximum width not less than the second maximum width; forming a third recess extending through said second dielectric layer and into said first dielectric layer; forming a fourth recess extending through said second recess and into said second dielectric layer, said fourth recess having a second trench defined by said second dielectric layer and a second contact corridor defined by said first dielectric layer, said second contact corridor having a first maximum width, said second trench having a second maximum width not less than the first maximum width; and forming a second metal layer filling said second contact corridor and said second trench, said second metal layer extending from a top surface not above the second dielectric layer, through said second trench, and terminating at a bottom surface thereof within said second contact corridor.
Claim 38
Dependent Claim
27 words
The method as defined in claim 29, wherein said second metal layer has a constant electrical resistance from the top surface thereof to the bottom surface thereof.
Claim 39
Independent Claim
187 words
A method of forming an interconnect structure in a semiconductor structure that includes a semiconductor substrate having a first field oxide region therein, a gate structure having a top surface and being situated upon the first field oxide region, a first dielectric layer composed of a first material that is situated upon the gate structure and upon the first and second field oxide regions, and a second dielectric layer composed of a second material different than the first material and situated upon a top surface of the first dielectric layer, the method comprising: forming a plurality of first recesses extending through the second dielectric layer and into the first dielectric layer, at least one of the first recesses terminating: upon the top surface of the gate structure; and upon the semiconductor substrate; forming a plurality of second recesses each extending through the second dielectric layer, wherein at least one of the second recesses terminates: at the top surface of the first dielectric layer; upon the semiconductor substrate and extends through one of the first recesses; and filling the first and second recesses with an electrically conductive layer.
Claim 40
Independent Claim
187 words
A method of forming an interconnect structure in a semiconductor structure that includes a semiconductor substrate having a first field oxide region therein, a gate structure having a top surface and being situated upon the first field oxide region, a first dielectric layer composed of a first material that is situated upon the gate structure and upon the first and second field oxide regions, and a second dielectric layer composed of a second material different than the first material and situated upon a top surface of the first dielectric layer, the method comprising: forming a plurality of first recesses extending through the second dielectric layer and into the first dielectric layer, at least one of the first recesses terminating: upon the top surface of the gate structure; and upon the semiconductor substrate; forming a plurality of second recesses each extending through the second dielectric layer, wherein at least one of the second recesses terminates: at the top surface of the first dielectric layer; upon the semiconductor substrate and extends through one of the first recesses; and filling the first and second recesses with an electrically conductive layer.
Claim 41
Dependent Claim
38 words
The method as defined in claim 31, wherein: the semiconductor structure includes a second field oxide region; and at least one of the first recesses terminates upon the semiconductor substrate between the first and second field oxide regions.
Claim 42
Dependent Claim
58 words
The method as defined in claim 31, wherein: each said second recess has a first trench defined by the second dielectric layer and has a first contact corridor defined by the first dielectric layer; the first contact corridor has a first maximum width; the first trench has a second maximum width not less than the first maximum width.
Claim 43
Dependent Claim
85 words
The method as defined in claim 33, wherein: the electrically conductive layer filling fills the first contact corridor and the first trench; and the electrically conductive layer extends from a top surface above the second dielectric layer through the first trench and terminates at a bottom surface thereof within the first contact corridor, the electrically conductive layer having a first portion thereof extending from the first trench and above the second dielectric layer with a third maximum width not less than the second maximum width.
Claim 44
Dependent Claim
41 words
The method as defined in claim 31, further comprising dividing the electrically conductive layer into a plurality of separate portions equal to the number of first and second recess, each said portion extending through one of the first and second recesses.
Claim 45
Dependent Claim
36 words
The method as defined in claim 35, wherein each said portion of the electrically conductive layer is electrically isolated from other portions above the semiconductor substrate and in contact with the first and second dielectric layers.
References Cited (Backward Citations)
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