Patent US6060367A successfully refreshed from Google Patents.
US6060367A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of forming capacitors
Assignee: UNITED SEMICONDUCTOR CIRCUIT CORP
•
Filing: 1998-04-14
•
Granted: 2000-05-09
•
Expires: 2018-04-14
Abstract
Abstract The method for forming a first electrodes of capacitors on a semiconductor substrate includes the steps as follows. At first, a first dielectric layer is formed. A portion of the first dielectric layer is then removed to define contact holes. A first conductive layer is formed within the contact holes and over the first dielectric layer. A second dielectric layer is formed over the first conductive layer. A portion of the second dielectric layer is removed to define the shape of the first electrodes. A second conductive layer is formed over the second dielectric layer and the first conductive layer. A first rugged silicon layer is formed over the second conductive layer. A third dielectric layer is then formed over the first rugged silicon layer. A portion of the third dielectric layer, of the first rugged silicon layer, and of the second conductive layer is removed to define capacitor area. The second dielectric layer is removed and a second rugged silicon layer is formed over the substrate. A portion of the second rugged silicon layer and a portion of the first conductive layer which are located outside the capacitor area is removed. Finally, the third dielectric layer is removed to form the first electrodes.
Inventors
- 👤 Jhy-Jyi Sze
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 01:57
CPC Classifications
H; H10; H10D; H10D1/00; H10D1/60; H10D1/68; H10D1/692; H10D1/711; H10D1/01; H10D1/041; H10D1/042; H10D1/712; H10D1/714; H10D1/716
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
189 words
A method of forming first electrodes of capacitors on a semiconductor substrate, comprising the steps of: forming a first dielectric layer on the substrate; removing a portion of said first dielectric layer to define contact holes within; forming a first conductive layer within said contact holes and over said first dielectric layer; forming a second dielectric layer over said first conductive layer; removing a portion of said second dielectric layer to define a shape of said first electrodes; forming a second conductive layer over said second dielectric layer and said first conductive layer; forming a first rugged silicon layer over said second conductive layer; forming a third dielectric layer over said first rugged silicon layer; removing a portion of said third dielectric layer, of said first rugged silicon layer, and of said second conductive layer to define a capacitor area; removing said second dielectric layer; forming a second rugged silicon layer over said substrate; removing a portion of said second rugged silicon layer and a portion of said first conductive layer which are located outside said capacitor area; and removing said third dielectric layer to form said first electrodes.
Claim 2
Independent Claim
189 words
A method of forming first electrodes of capacitors on a semiconductor substrate, comprising the steps of: forming a first dielectric layer on the substrate; removing a portion of said first dielectric layer to define contact holes within; forming a first conductive layer within said contact holes and over said first dielectric layer; forming a second dielectric layer over said first conductive layer; removing a portion of said second dielectric layer to define a shape of said first electrodes; forming a second conductive layer over said second dielectric layer and said first conductive layer; forming a first rugged silicon layer over said second conductive layer; forming a third dielectric layer over said first rugged silicon layer; removing a portion of said third dielectric layer, of said first rugged silicon layer, and of said second conductive layer to define a capacitor area; removing said second dielectric layer; forming a second rugged silicon layer over said substrate; removing a portion of said second rugged silicon layer and a portion of said first conductive layer which are located outside said capacitor area; and removing said third dielectric layer to form said first electrodes.
Claim 3
Dependent Claim
44 words
The method of claim 1 further comprising the steps of forming a fourth dielectric layer over said substrate and of forming second electrodes over said fourth dielectric layer, which are performed after said step of removing said third dielectric layer, to form said capacitors.
Claim 4
Dependent Claim
32 words
The method of claim 1, wherein said first dielectric layer comprises a first oxide layer, a nitride layer over said first oxide layer, and a second oxide layer over said nitride layer.
Claim 5
Dependent Claim
14 words
The method of claim 1, wherein said first conductive layer comprises a polysilicon layer.
Claim 6
Dependent Claim
14 words
The method of claim 1, wherein said second dielectric layer comprises a BPSG layer.
Claim 7
Dependent Claim
14 words
The method of claim 1, wherein said second conductive layer comprises a polysilicon layer.
Claim 8
Dependent Claim
16 words
The method of claim 1, wherein said first rugged silicon layer comprises a HSG silicon film.
Claim 9
Dependent Claim
14 words
The method of claim 1, wherein said third dielectric layer comprises an oxide layer.
Claim 10
Dependent Claim
16 words
The method of claim 1, wherein said second rugged silicon layer comprises a HSG silicon film.
Claim 11
Dependent Claim
32 words
The method of claim 1, wherein said second rugged silicon layer is formed on a surface of said third dielectric layer, of said second conductive layer, and of said first conductive layer.
Claim 12
Dependent Claim
25 words
The method of claim 1, wherein a portion of said first dielectric layer is also removed in said step of removing said third dielectric layer.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2003-05-09 | 2003-11-08 | 2004-05-09 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2007-05-09 | 2007-11-08 | 2008-05-09 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2011-05-09 | 2011-11-08 | 2012-05-09 | $7700.00 | Window Closed / Lapsed |