US6057559A
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II-VI laser diodes with short-period strained-layer superlattice quantum wells
Assignee: 3M Innovative Properties Co
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Filing: 1995-01-31
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Granted: 2000-05-02
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Expires: 2015-01-31
Abstract
Abstract A laser diode for emitting a coherent beam of light in the blue and/or green portions of the spectrum. The laser diode includes a plurality of layers of II-VI semiconductor forming a pn junction, including at least a first light-guiding layer. A short-period strained-layer superlattice (SPSLS) CdZnSe quantum well active layer is positioned within the pn junction. The layers of II-VI semiconductor are supported by a substrate. First and second electrodes on opposite sides of the layers of II-VI semiconductor couple electrical energy to the laser diode.
Inventors
- 👤 Hwa Cheng
- 👤 James M. DePuydt
- 👤 Michael A. Haase
- 👤 Jun Qiu
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 12:53
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/30; H01S5/34; H01S5/347; B; B82; B82Y; B82Y20/00; H10; H10P; H10P14/00; H10P14/20; H10P14/22; H10P14/29; H10P14/2901; H10P14/2907; H10P14/2911; H10P14/32; H10P14/3202; H10P14/3224; H10P14/3228; H10P14/3231; H10P14/3232; H10P14/3241; H10P14/3242; H10P14/3244; H10P14/3251; H10P14/3252; H10P14/34; H10P14/3402; H10P14/3424; H10P14/3428; H10P14/3431; H10P14/3432; H10P14/3438; H10P14/3441; H10P14/3442; H10P14/3444; H01S5/3403; H01S5/3406; H01S5/342; H10H; H10H20/00; H10H20/01; H10H20/011; H10H20/012; H10H20/0125
Claims Analysis
Total Claims: 16
Claim 1
Independent Claim
95 words
A II-VI compound semiconductor electroluminescent device including: a plurality or layers of II-VI semiconductor forming a pn junction; a short-period strained-layer superlattice (SPSLS) active layer within the pn junction, the SPSLS layer including a plurality of overlaying single crystal thickness layers of elements and having a form described by the notation ((X) m (Y) n ) p , where X and Y are binary II-VI semiconductor compounds and m, n and p are integers; a substrate for supporting the layers of II-VI semiconductor; and first and second electrodes for coupling electrical energy to the device.
Claim 2
Dependent Claim
95 words
A II-VI compound semiconductor electroluminescent device including: a plurality or layers of II-VI semiconductor forming a pn junction; a short-period strained-layer superlattice (SPSLS) active layer within the pn junction, the SPSLS layer including a plurality of overlaying single crystal thickness layers of elements and having a form described by the notation ((X) m (Y) n ) p , where X and Y are binary II-VI semiconductor compounds and m, n and p are integers; a substrate for supporting the layers of II-VI semiconductor; and first and second electrodes for coupling electrical energy to the device.
Claim 3
Dependent Claim
34 words
The electroluminescent device of claim 1 wherein the SPSLS active layer includes a quantum well layer described by the notation ((CdSe) m (ZnSe) n ) p , where m, n and p are integers.
Claim 4
Dependent Claim
33 words
The electroluminescent device of claim 1 wherein the SPSLS active layer includes a quantum well layer described by the notation ((ZnTe) m (ZnSe) n ) p where m, n and p are integers.
Claim 5
Dependent Claim
27 words
The electroluminescent device of claim 1 wherein the SPSLS active layer includes a quantum well layer described by the notation p where m and p are integers.
Claim 6
Dependent Claim
18 words
The electroluminescent device of claim 1 wherein the SPSLS active layer includes a SPSLS quantum well active layer.
Claim 7
Dependent Claim
109 words
A II-VI compound semiconductor laser diode, including: a plurality of layers of II-VI semiconductor forming a pn junction; a short-period strained-layer superlattice (SPSLS) quantum well active layer within the pn junction, the SPSLS layer including a plurality of overlaying single crystal thickness layers of elements and having a form described by the notation ((X) m (Y) n ) p where X and Y are binary II-VI semiconductor compounds and m, n and p are integers; a semiconductor substrate for supporting the layers of II-VI semiconductor; and first and second electrodes for coupling electrical energy to the laser diode; first and second electrodes for coupling electrical energy to the laser.
Claim 8
Dependent Claim
109 words
A II-VI compound semiconductor laser diode, including: a plurality of layers of II-VI semiconductor forming a pn junction; a short-period strained-layer superlattice (SPSLS) quantum well active layer within the pn junction, the SPSLS layer including a plurality of overlaying single crystal thickness layers of elements and having a form described by the notation ((X) m (Y) n ) p where X and Y are binary II-VI semiconductor compounds and m, n and p are integers; a semiconductor substrate for supporting the layers of II-VI semiconductor; and first and second electrodes for coupling electrical energy to the laser diode; first and second electrodes for coupling electrical energy to the laser.
Claim 9
Dependent Claim
31 words
The laser diode of claim 6 wherein the SPSLS active layer includes a layer described by the notation ((CdSe) m (ZnSe) n ) p where m, n and p are integers.
Claim 10
Dependent Claim
32 words
The laser diode of claim 6 wherein the SPSLS active layer includes a layer described by the notation ((ZnTe) m (ZnSe) n ) p , where m, n and p are integers.
Claim 11
Dependent Claim
29 words
The laser diode of claim 6 wherein the SPSLS active layer includes a layer described by the notation ((ZnSe) m ) p , where m and p are integers.
Claim 12
Dependent Claim
21 words
The laser diode of claim 6 wherein the plurality of layers of II-VI semiconductor include at least a first light-guiding layer.
Claim 13
Dependent Claim
56 words
The laser diode of claim 6 wherein the plurality of layers of II-VI semiconductor include: a first light-guiding layer of II-VI semiconductor of a first conductivity type; and a second light-guiding layer of II-VI semiconductor of a second conductivity type adjacent to the first light-guiding layer, the first and second light-guiding layers forming the pn junction.
Claim 14
Dependent Claim
40 words
The laser diode of claim 6 wherein the SPSLS quantum well active layer includes a layer described by the notation ((X) m (Y) n ) p where X and Y are binary II-VI semiconductor compounds and m=1-3, n=1-5 and p=1-5.
Claim 15
Dependent Claim
94 words
A laser diode of the type emitting a coherent beam of light in the blue and/or green portions of the spectrum, including: a plurality of layers of II-VI semiconductor forming a pn junction, including at least a first light-guiding layer; a short-period strained-layer superlattice (SPSLS) CdZnSe quantum well active layer within the pn junction, the SPSLS layer including a plurality of overlaying single crystal thickness layers of Cd, Zn and Se; a semiconductor substrate for supporting the layers of II-VI semiconductor; and first and second electrodes for coupling electrical energy to the laser diode.
Claim 16
Dependent Claim
94 words
A laser diode of the type emitting a coherent beam of light in the blue and/or green portions of the spectrum, including: a plurality of layers of II-VI semiconductor forming a pn junction, including at least a first light-guiding layer; a short-period strained-layer superlattice (SPSLS) CdZnSe quantum well active layer within the pn junction, the SPSLS layer including a plurality of overlaying single crystal thickness layers of Cd, Zn and Se; a semiconductor substrate for supporting the layers of II-VI semiconductor; and first and second electrodes for coupling electrical energy to the laser diode.
References Cited (Backward Citations)
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 2003-05-02 | 2003-11-01 | 2004-05-02 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2007-05-02 | 2007-11-01 | 2008-05-02 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2011-05-02 | 2011-11-01 | 2012-05-02 | $7700.00 | Window Closed / Lapsed |